利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

239 条记录 (耗时 0.043 秒)

    Support assembly
    62.
    发明授权
    Support assembly 有权

    公开(公告)号：US10593539B2

    公开(公告)日：2020-03-17

    申请号：US13457421

    申请日：2012-04-26

    申请人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

    发明人： Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang ,  Xiaoxiong (John) Yuan

    IPC分类号： B23K10/00 ,  H01L21/02 ,  H01J37/32 ,  H01L21/67 ,  C23C14/54 ,  C23C14/50 ,  C23C14/02

    摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A flange extends radially outward from the cylindrical outer surface. A fluid channel is formed in the disk-shaped body and is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves formed in the upper surface are coupled by a hole to the vacuum conduit of the shaft. A gas conduit formed through the disk-shaped body couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body.

    Method for tuning a deposition rate during an atomic layer deposition process
    63.
    发明授权
    Method for tuning a deposition rate during an atomic layer deposition process 有权
    在原子层沉积过程中调整沉积速率的方法

    公开(公告)号：US09418890B2

    公开(公告)日：2016-08-16

    申请号：US14279260

    申请日：2014-05-15

    申请人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    发明人： Paul Ma ,  Joseph F. Aubuchon ,  Jiang Lu ,  Mei Chang

    IPC分类号： H01L21/768 ,  C23C16/455 ,  C23C16/52

    CPC分类号： H01L21/76841 ,  C23C16/45534 ,  C23C16/52

    摘要： Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

    摘要翻译： 本发明的实施例提供了在诸如原子层沉积（ALD）工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中，提供了一种方法，其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体，并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中，氮化钽沉积在衬底上，并且烷基氨基金属前体气体包含钽前体，例如五（二甲基氨基）钽（PDMAT）），第二前体气体含有氮前体如氨，并且处理气体 含有二甲胺（DMA）。

    Contact clean by remote plasma and repair of silicide surface
    64.
    发明授权
    Contact clean by remote plasma and repair of silicide surface 有权
    通过远程等离子体接触清洁并修复硅化物表面

    公开(公告)号：US09147578B2

    公开(公告)日：2015-09-29

    申请号：US13004740

    申请日：2011-01-11

    申请人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

    发明人： Xinliang Lu ,  Chien-Teh Kao ,  Chiukin Steve Lai ,  Mei Chang

    IPC分类号： H01L21/00 ,  H01L21/285 ,  H01L21/02 ,  H01L21/28 ,  H01L21/321 ,  H01L29/66

    CPC分类号： H01L21/28518 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28061 ,  H01L21/321 ,  H01L29/665 ,  H01L29/6659 ,  Y10S438/906

    摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.

    摘要翻译： 实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面 清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。 在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于 反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。

    Process for forming cobalt-containing materials
    65.
    发明授权
    Process for forming cobalt-containing materials 有权
    用于形成含钴材料的方法

    公开(公告)号：US08815724B2

    公开(公告)日：2014-08-26

    申请号：US13452237

    申请日：2012-04-20

    申请人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-ho Yu ,  Kevin Moraes ,  See-Eng Phan

    发明人： Seshadri Ganguli ,  Schubert S. Chu ,  Mei Chang ,  Sang-ho Yu ,  Kevin Moraes ,  See-Eng Phan

    IPC分类号： H01L21/28 ,  H01L21/44

    CPC分类号： C23C16/42 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

    摘要： Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

    摘要翻译： 本文所述的本发明的实施例通常提供用于形成硅化钴层，金属钴层和其它含钴材料的方法和装置。 在一个实施例中，提供了一种用于在衬底上形成含钴硅化物的材料的方法，其包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，沉积 在钴硅化物材料上的金属钴材料，并在基底上沉积金属接触材料。 在另一个实施例中，一种方法包括将衬底暴露于至少一个预清洗工艺以暴露含硅表面，在含硅表面上沉积钴硅化物材料，将衬底暴露于退火工艺，将阻挡材料沉积在 钴硅化物材料，并将金属接触材料沉积在阻挡材料上。

    Methods For Atomic Layer Etching
    67.
    发明申请
    Methods For Atomic Layer Etching 有权
    原子层蚀刻方法

    公开(公告)号：US20140106565A1

    公开(公告)日：2014-04-17

    申请号：US14106166

    申请日：2013-12-13

    申请人： Mei Chang ,  Joseph Yudovsky

    发明人： Mei Chang ,  Joseph Yudovsky

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

    摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

    摘要翻译： 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

    Multi-Component Film Deposition
    68.
    发明申请
    Multi-Component Film Deposition 审中-公开
    多组分膜沉积

    公开(公告)号：US20130143415A1

    公开(公告)日：2013-06-06

    申请号：US13308849

    申请日：2011-12-01

    申请人： Joseph Yudovsky ,  Mei Chang ,  Steven D. Marcus ,  Garry K. Kwong

    发明人： Joseph Yudovsky ,  Mei Chang ,  Steven D. Marcus ,  Garry K. Kwong

    IPC分类号： H01L21/31 ,  B67D7/06 ,  C23C16/455

    CPC分类号： C23C16/45551

    摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.

    摘要翻译： 提供的是原子层沉积装置和方法，其包括气体分配板，其包括多个细长气体端口，该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口 多数。 气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。 还提供了原子层沉积装置和方法，其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

    Methods for Atomic Layer Etching
    69.
    发明申请
    Methods for Atomic Layer Etching 有权
    原子层蚀刻方法

    公开(公告)号：US20130137267A1

    公开(公告)日：2013-05-30

    申请号：US13307524

    申请日：2011-11-30

    申请人： Mei Chang ,  Joseph Yudovsky

    发明人： Mei Chang ,  Joseph Yudovsky

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

    摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

    摘要翻译： 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。