摘要:
A thiol probe for a protein, which promotes ionization in proteomic analysis using mass spectrometry and can be used even for a protein that has a high degree of hydrophobicity and quickly turns over, and is represented by the following formula (I): In formula (I), R1 represents a linker group, and R2 represents a substituted ammonium group or a substituted amino group. A mass spectrometry method for a protein, includes the steps of obtaining a modified protein by reacting the thiol probe with a protein to be subjected to mass spectrometry and subjecting the modified protein to mass spectrometry.
摘要:
The present invention provides a liver preservation solution containing trehalose and dibutyryl-cAMP. The content of nitroglycerin in the preservation solution is preferably lower than 0.44 mM. In the liver preservation solution of the present invention, since the toxicity due to nitroglycerin, which is observed during liver preservation, has been improved, liver transplantation can be performed with a high engrafted rate.
摘要:
An image reading apparatus including: an image sensor unit having a light source that irradiates light onto an original document transferred to a predetermined image reading position, and a light receiving element that receives reflected light of the light; a white reference member for shading correction, provided so as to oppose the image sensor unit across a transferring path for the original document; an actuator that adjusts a position or an angle of the white reference member; and a control device that sets a position or angle of the white reference member and controls the actuator so as to adjust the white reference member to the set position or to the set angle, so that light reflected from the white reference member is received on the light receiving element when correcting shading, and so that the reflected light is not received on the light receiving element when reading an image.
摘要:
There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要:
A mounting structure for mounting a separate shaft type oil pump in a case of a transmission. The separate shaft type oil pump is driven by a shaft that is separate from and rotated in cooperation with a shaft arranged in a torque input route extending from an engine to the transmission to supply hydraulic oil to a transmission oil pressure control mechanism. The mounting structure includes a spacer coupler that fastens the oil pump to the transmission case. The spacer coupler includes a plurality of spacers that couple the oil pump and the transmission case. An oil passage is formed in the spacers of the spacer coupler to connect an oil pressure system, which includes the oil pressure control mechanism, and the oil pump. A manual shaft for operating the transmission is arranged in a clearance between the spacers of the spacer coupler.
摘要:
A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.
摘要:
A multilayer wiring board includes at least two wiring boards having wiring layers containing wiring patterns formed on both sides. A pair of fin-shaped bumps are formed at desired positions on wiring patterns on the surfaces facing each other, of the wiring boards, so that the bumps assume a slender shape as seen in plan view and that the bumps intersect each other. The pair of fin-shaped bumps are electrically connected to form an inter-board connection terminal. Further, an insulating layer is formed between the wiring boards, and protection films are formed to cover the entire surface except pad areas defined at predetermined positions on outer wiring layers of the wiring boards.
摘要:
Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要:
Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译:将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面(主表面),以形成氢离子注入层(离子注入损伤层)11。 氢离子注入,形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度,120℃或更高和250℃或更低(低于支撑衬底的熔点)下加热。 此外,施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后,对所得的硅薄膜13的表面进行抛光以去除损坏部分,从而可以制造半导体衬底。 可以提供一种半导体衬底,其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。
摘要:
An audio controlling device generates an audio mute signal based on the level of a power-supply voltage supplied from the source equipment, whether a clock signal has been input or not, whether a digital signal has been input or not, whether a multiplier circuit is being locked or not, an error rate, whether an audio clock detection circuit is being locked or not, the presence or absence of a change in a control signal, and whether a synchronization detection circuit is stable or not. The audio controlling device applies the audio mute signal to an audio mute circuit, while applying an OSD control signal to an OSD processing circuit. The audio mute circuit is placed in a mute state or unmute state based on the audio mute signal. The OSD processing circuit provides the on-screen display of a message based on the OSD control signal.