公开(公告)号：US07138073B2

公开(公告)日：2006-11-21

申请号：US10762514

申请日：2004-01-23

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/00

摘要： A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.

摘要翻译： 使用Cu的CMP研磨用浆料的半导体装置的制造方法，其包括含有能够与Cu形成水不溶性络合物的杂环化合物的第一配位剂和含有杂环化合物的第二络合剂，所述杂环化合物为 能够与Cu形成轻微的水溶性或水溶性络合物，从而在形成络合物后提供至少一种额外的配体。

公开(公告)号：US07060621B2

公开(公告)日：2006-06-13

申请号：US10838261

申请日：2004-05-05

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8  (A) 0.7≦w1/(w1+w2)≦0.97  (B) 3≦d2/d1≦5  (C) 0.7≦w1/(w1+w2)≦0.9.  (D)

摘要翻译： 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子 其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比， 其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。 （D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

公开(公告)号：US20050064796A1

公开(公告)日：2005-03-24

申请号：US10865818

申请日：2004-06-14

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： C09G1/02 ,  B24B37/044

摘要： There is disclosed a polishing method comprising contacting a polishing surface of a semiconductor substrate with a polishing pad comprising a resin as a main component and attached to a turntable, and dropping a CMP slurry onto the polishing pad to polish the polishing surface, the CMP slurry comprising a resin particle, an inorganic particle, a polymerizable component, and a polymerization initiator.

摘要翻译： 公开了一种抛光方法，包括使半导体衬底的抛光表面与包括树脂作为主要组分并附着在转台上的抛光垫相接触，并将CMP浆料落在抛光垫上以抛光抛光表面，CMP浆料 包括树脂颗粒，无机颗粒，可聚合组分和聚合引发剂。

公开(公告)号：US20050009322A1

公开(公告)日：2005-01-13

申请号：US10909287

申请日：2004-08-03

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： There is disclosed a CMP slurry which comprises a solvent, abrasive grains, and a silicone-based surfactant having an HLB value ranging from 7 to 20.

摘要翻译： 公开了一种CMP浆料，其包含溶剂，磨粒和HLB值为7至20的硅氧烷基表面活性剂。

公开(公告)号：US06653267B2

公开(公告)日：2003-11-25

申请号：US09893961

申请日：2001-06-29

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C11D328

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

公开(公告)号：US06611060B1

公开(公告)日：2003-08-26

申请号：US09677743

申请日：2000-10-03

申请人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L2352

CPC分类号： H01L21/76846 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

摘要翻译： 形成盖膜的方法包括以R1的选择性（=绝缘膜的除去速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及以选择性进行抛光操作的第二抛光步骤 的R2（=盖膜的去除率/绝缘膜的去除率）。 通过使用条件为R1> R2的浆料进行每次研磨操作。 通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。 因此，可以提供具有优异RC特性的半导体器件。

公开(公告)号：US07452819B2

公开(公告)日：2008-11-18

申请号：US10855529

申请日：2004-05-28

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US20080227297A1

公开(公告)日：2008-09-18

申请号：US12038877

申请日：2008-02-28

申请人： Yukiteru MATSUI ,  Gaku Minamihaba ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru MATSUI ,  Gaku Minamihaba ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  B24B29/02

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/31058

摘要： A chemically mechanically polishing method is provided, which includes slide-contacting a polishing film with a polishing pad while feeding a first chemical liquid and a second chemical liquid to the polishing pad. The first chemical liquid contains an electrolyte and bubbles having a diameter ranging from 10 nm to 1000 μm, and the second chemical liquid contains abrasive particles.

摘要翻译： 提供了一种化学机械抛光方法，其包括将抛光膜与抛光垫滑动接触，同时向抛光垫供给第一化学液体和第二化学液体。 第一化学液体含有直径为10nm〜1000μm的电解质和气泡，第二化学液含有磨粒。

公开(公告)号：US07419910B2

公开(公告)日：2008-09-02

申请号：US10932096

申请日：2004-09-02

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含Cu氧化剂，用于形成Cu有机络合物的络合剂，表面活性剂，无机颗粒和含有聚苯乙烯的树脂颗粒，其表面上具有相同极性的官能团 无机粒子的平均粒径小于100nm的树脂粒子的浓度小于1重量％。

公开(公告)号：US07364667B2

公开(公告)日：2008-04-29

申请号：US10155015

申请日：2002-05-28

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/00 ,  H01L21/3212

摘要： A CMP slurry comprising polishing abrasives containing mixture abrasives of silica and alumina is used. In CMP using the slurry comprising mixture abrasives of silica and alumina as polishing abrasives, a down force-dependency of a polishing rate is high and an increase in dishing can be effectively suppressed.

摘要翻译： 使用包含抛光研磨剂的CMP浆料，其含有二氧化硅和氧化铝的混合物研磨剂。 在使用包含二氧化硅和氧化铝的混合物研磨剂的浆料作为抛光磨料的CMP中，抛光速率的下降力依赖性高，并且可以有效地抑制凹陷的增加。