公开(公告)号：US5414271A

公开(公告)日：1995-05-09

申请号：US789234

申请日：1991-11-07

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  Wolodymyr Czubatyj ,  David A. Strand ,  Guy C. Wicker

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  Wolodymyr Czubatyj ,  David A. Strand ,  Guy C. Wicker

IPC分类号： G11C11/56 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1625 ,  G11C13/04 ,  G11C2213/72

摘要： A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level. The memory elements are further characterized by enhanced stability, which stability is achieved through the use of compositional modulation of the semiconductor material from which the memory elements are fabricated.

摘要翻译： 基于由所述独特类型的半导体材料提供的新颖的开关特性，固态，直接可重写的，电子的，非易失性的，高密度的，低成本的，低能量的，高速的，容易制造的多单元单元存储器或控制阵列 通过可逆的费米能级位置的大动态范围。 制造阵列的存储器或控制元件在显着降低的能量水平下显示出更高的开关速度的数量级。 本发明的新颖的记忆元件又特别包括局部原子和/或电极顺序的许多稳定和非易失性的可检测配置，这些配置可以通过偏转能级的电输入信号来选择性地和重复地访问 。 存储元件的特征还在于增强的稳定性，其通过使用制造存储元件的半导体材料的组成调制来实现稳定性。

公开(公告)号：US5341328A

公开(公告)日：1994-08-23

申请号：US898635

申请日：1992-06-15

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  Wolodymyr Czubatyj ,  David A. Strand ,  Guy C. Wicker

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  Wolodymyr Czubatyj ,  David A. Strand ,  Guy C. Wicker

IPC分类号： G11C11/56 ,  G11C16/02 ,  H01L27/24 ,  H01L45/00

CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/115 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1625 ,  G11C13/04 ,  G11C2213/72

摘要： Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies. The reduced switching current requirements and an increased write/erase cycle life are achieved by structurally modifying the electrical contact with the aforementioned layer of amorphous silicon.

摘要翻译： 本文公开了具有降低的开关电流要求和增加的写入/擦除循环寿命的固态，直接可重写，非易失性，高密度，低成本，低能量，高速度，容易制造的单电池存储元件。 结构改进的记忆元件包括由非晶硅形成的电接触，单独或与无定形碳层组合。 存储元件在显着降低的开关能量水平下显示出更高的开关速度的数量级。 本发明的新颖的记忆元件尤其通过局部原子和/或电子顺序的至少两个稳定和非易失性可检测配置来进一步表征，这些配置可以通过指定能量的电输入信号被选择性地和重复地访问 。 通过结构上改变与上述非晶硅层的电接触来实现降低的开关电流要求和增加的写入/擦除周期寿命。

公开(公告)号：US5296716A

公开(公告)日：1994-03-22

申请号：US747053

申请日：1991-08-19

申请人： Stanford R. Ovshinsky ,  Wolodymyr Czubatyj ,  Quiyi Ye ,  David A. Strand ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  Wolodymyr Czubatyj ,  Quiyi Ye ,  David A. Strand ,  Stephen J. Hudgens

IPC分类号： H01L27/10 ,  G11C11/56 ,  G11C16/02 ,  H01H45/00 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L27/24 ,  H01L29/788 ,  H01L29/792 ,  H01L45/00

CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/115 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675 ,  G11C13/04

摘要： A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

摘要翻译： 基于由独特类型的半导体材料提供的独特配置提供的现象学新颖的电开关特性的固态，直接可重写，电子，非易失性，高密度，低成本，低能量，高速度，易于制造的多位单电池存储器 ，哪个存储器在显着降低的能量水平下显示出高数量级的开关速度。 特别地，本发明的新颖记忆特征在于由局部原子和/或电子顺序的许多稳定和真正的非易失性可检测配置，其可以通过变化的脉冲电压和持续时间的电输入信号来选择性地和重复地访问。

公开(公告)号：US5180690A

公开(公告)日：1993-01-19

申请号：US551684

申请日：1990-07-09

申请人： Wolodymyr Czubatyj ,  Stanford R. Ovshinsky ,  Guy C. Wicker ,  David Beglau ,  Ronald Himmler ,  David Jablonski ,  Subhendu Guha

发明人： Wolodymyr Czubatyj ,  Stanford R. Ovshinsky ,  Guy C. Wicker ,  David Beglau ,  Ronald Himmler ,  David Jablonski ,  Subhendu Guha

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/458 ,  H01L29/78618 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78681 ,  H01L29/78684 ,  Y10S148/122

摘要： A method for the low temperature fabrication of doped polycrystalline semiconductor alloy material. The method includes the steps of exposing a body of semiconductor alloy material to a reaction gas containing at least a source of the dopant element, and establishing an electrical potential sufficient to sputter etch the surface of said layer, while decomposing the reaction gas. This allows for the deposition of a layer of doped amorphous semiconductor alloy material upon the body of semiconductor alloy material. Thereafter, the doped layer of amorphous semiconductor alloy material is exposed to an annealing environment sufficient to at least partially crystallize said amorphous material, and activate the dopant element.

摘要翻译： 掺杂多晶半导体合金材料的低温制造方法。 该方法包括以下步骤：将半导体合金材料体暴露于至少含有掺杂剂元素的源的反应气体，并且在分解反应气体的同时建立足以溅射蚀刻所述层的表面的电势。 这允许在半导体合金材料体上沉积掺杂的非晶半导体合金材料层。 此后，非晶半导体合金材料的掺杂层暴露于足以至少部分地使所述非晶材料结晶的退火环境，并激活掺杂剂元素。

公开(公告)号：US5102860A

公开(公告)日：1992-04-07

申请号：US77840

申请日：1987-07-27

申请人： Stanford R. Ovshinsky ,  Rosa Young

发明人： Stanford R. Ovshinsky ,  Rosa Young

IPC分类号： C01G1/00 ,  C04B35/45 ,  C04B41/80 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

CPC分类号： C04B35/4504 ,  H01L39/126 ,  H01L39/2419 ,  H01L39/2464 ,  Y10S505/742 ,  Y10S505/78

摘要： A method of controllably introducing a parametric modifier into a perovskite ceramic defect oxide type superconducting material, said method including the substitution of labile atoms of a parametric modifier (such as fluorine) for atoms already present in the ceramic defect oxide material.

公开(公告)号：US5032193A

公开(公告)日：1991-07-16

申请号：US468298

申请日：1990-01-22

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

IPC分类号： B22D11/00 ,  B22D11/06 ,  B22F1/00 ,  B22F9/08 ,  C03B37/023 ,  C03C13/04 ,  C04B35/65 ,  C22C1/10 ,  C22C47/08 ,  C23C26/02

CPC分类号： B22F9/082 ,  B22D11/008 ,  B22D11/06 ,  B22F1/004 ,  C03B37/023 ,  C03C13/04 ,  C04B35/65 ,  C22C1/1042 ,  C22C1/1078 ,  C22C47/08 ,  C23C26/02 ,  B22F2998/00

摘要： A process for fabricating synthetic materials, such as "atomic ceramics", by atomic alloying of a host material. Energetic modifier elements or species are introduced into the host matrix of a fluidic precursor material so as to obtain an engineered material characterized by a range of optical electrical, thermal, chemical or mechanical properties not exhibited by either the modifier or the precursor material. In this manner modified, layered, graded, doped and/or alloyed materials may be synthesized. Special emphasis is placed on a novel technique for the synthesis of optical fibers.

摘要翻译： 通过主体材料的原子合金化制造诸如“原子陶瓷”的合成材料的方法。 能量改性剂元素或物质被引入到流体前体材料的主体基质中，以便获得特征在于改性剂或前体材料未显示的一系列光学电学，热学，化学或机械性质的工程材料。 以这种方式，可以合成修饰的层状，分级，掺杂和/或合金化材料。 特别强调用于合成光纤的新颖技术。

公开(公告)号：US4853785A

公开(公告)日：1989-08-01

申请号：US197353

申请日：1988-05-23

申请人： Stanford R. Ovshinsky ,  Lawrence G. Norris

发明人： Stanford R. Ovshinsky ,  Lawrence G. Norris

IPC分类号： H01L27/146 ,  H01L27/148 ,  H04N5/225 ,  H04N5/372

CPC分类号： H01L27/14665 ,  H04N5/225 ,  H04N5/335

摘要： An electronic camera system, which system comprises the combination of an image digitizer media and a digital signal storage media. The camera includes an x-y matrix formed of a thin film photosensor array of small area photosensitive elements capable of providing high resolution digitized electrical signal corresponding to an image projected thereon. The storage media is preferably formed as a layer of phase change optical memory material deposited upon an elongated tape or disc-like number and disposed in a cartridge-like housing which is removably positioned in the camera adjacent a writing mechanism such as a multi-headed laser. By utilizing multiple lasers, it is possible to simultaneously write on the entire width of the tape or disc for increasing processing speed.

摘要翻译： 一种电子照相机系统，该系统包括图像数字转换器介质和数字信号存储介质的组合。 照相机包括由能够提供与投射在其上的图像相对应的高分辨率数字化电信号的小面积感光元件的薄膜光电传感器阵列形成的x-y矩阵。 存储介质优选地形成为沉积在细长带或盘状数字上的相变光学存储材料层，并且设置在盒状壳体中，该壳体壳体可移除地定位在相机中的写入机构（例如多头 激光。 通过利用多个激光器，可以在带或盘的整个宽度上同时写入以提高处理速度。

公开(公告)号：US4816082A

公开(公告)日：1989-03-28

申请号：US87264

申请日：1987-08-19

申请人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

发明人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

IPC分类号： H01L31/04 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/076 ,  H01L31/065 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

公开(公告)号：US4788594A

公开(公告)日：1988-11-29

申请号：US918952

申请日：1986-10-15

申请人： Stanford R. Ovshinsky ,  Lawrence G. Norris

发明人： Stanford R. Ovshinsky ,  Lawrence G. Norris

IPC分类号： H01L27/146 ,  H04N5/225 ,  H04N3/14

CPC分类号： H04N5/335 ,  H01L27/14665 ,  H04N5/225

摘要： A thin film photosensor array for an electronic camera, said array adapted to provide an electrical signal corresponding to an image projected thereon. The photosensor array is preferably fabricated as a large area matrix of thin film, small area photosensitive elements capable of providing high resolution output in response to input from conventional camera optical systems. The photosensor array can be specifically tailored to provide color output or particular spectral sensitivity.

摘要翻译： 一种用于电子照相机的薄膜光电传感器阵列，所述阵列适于提供对应于投射在其上的图像的电信号。 优选地，光传感器阵列被制造为能够响应于常规照相机光学系统的输入而提供高分辨率输出的薄膜薄片小面积感光元件的大面积矩阵。 可以专门设计光传感器阵列以提供颜色输出或特定的光谱灵敏度。

公开(公告)号：US4769338A

公开(公告)日：1988-09-06

申请号：US23344

申请日：1987-03-09

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

IPC分类号： H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L29/161 ,  H01L29/78 ,  H01L29/786 ,  H01L27/04 ,  H01L29/54

CPC分类号： H01L27/1214 ,  H01L21/324 ,  H01L29/04 ,  H01L29/161 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78618 ,  H01L29/7866 ,  Y10S148/003 ,  Y10S148/122 ,  Y10S148/139 ,  Y10S148/15 ,  Y10S148/169

摘要： There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

摘要翻译： 公开了一种可以以快速切换速率操作的电影场效应晶体管，例如用于视频显示应用中。 晶体管包括具有比无定形材料更有序的结构的硅半导体材料体，并且比单晶材料有序。 晶体管的源极和漏极包括形成在硅半导体材料体上的整流触点。 还公开了制造晶体管和利用该晶体管的电子可寻址阵列系统的方法。