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    Image sensors comprising an organic photo-detector, a photo-detector array and dual floating diffusion nodes and electronic devices including the same
    61.
    发明授权
    Image sensors comprising an organic photo-detector, a photo-detector array and dual floating diffusion nodes and electronic devices including the same 有权

    公开(公告)号：US10804303B2

    公开(公告)日：2020-10-13

    申请号：US16233438

    申请日：2018-12-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae Park ,  Yong Wan Jin

    IPC: H01L27/146 ,  G02B5/20 ,  H04N5/225

    Abstract: An image sensor may include an organic photo-detector configured to selectively detect a near infrared wavelength spectrum of light and photoelectrically convert the detected near infrared wavelength spectrum of light, and a photo-detector array on the organic photo-detector, the photo-detector array including a photo-detector configured to detect a limited wavelength spectrum of visible light and photoelectrically convert the limited wavelength spectrum of visible light. The image sensor may discharge charges photoelectrically converted by the photo-detector to a first floating diffusion node, and the image sensor may discharge charges photoelectrically converted by the organic photo-detector to a second floating diffusion node. An area of the first floating diffusion node may be greater than an area of the second floating diffusion node.

    Organic photoelectronic device and image sensor
    64.
    发明授权
    Organic photoelectronic device and image sensor 有权

    公开(公告)号：US10374016B2

    公开(公告)日：2019-08-06

    申请号：US15986956

    申请日：2018-05-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gae Hwang Lee ,  Sung Young Yun ,  Yong Wan Jin

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00

    Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a first region closest to the first electrode, the first region having a first composition ratio (p1/n1) of a p-type semiconductor relative to an n-type semiconductor, a second region closest to the second electrode, the second region having a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and a third region between the first region and the second region in a thickness direction, the third region having a third composition ratio (p3/n3) of the p-type semiconductor relative to the n-type semiconductor that is greater or less than the first composition ratio (p1/n1) and the second composition ratio (p2/n2).

    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
    65.
    发明申请
    ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 审中-公开

    公开(公告)号：US20190157594A1

    公开(公告)日：2019-05-23

    申请号：US16258952

    申请日：2019-01-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Takkyun RO ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

    IPC: H01L51/44 ,  H01L51/50 ,  H01L51/00 ,  H01L51/42 ,  H01L27/30

    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

    Organic photoelectronic device and image sensor
    66.
    发明授权
    Organic photoelectronic device and image sensor 有权

    公开(公告)号：US10236461B2

    公开(公告)日：2019-03-19

    申请号：US15362964

    申请日：2016-11-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Takkyun Ro ,  Kyung Bae Park ,  Ryuichi Satoh ,  Yong Wan Jin ,  Chul Joon Heo

    IPC: H01L51/44 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50

    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

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