公开(公告)号：US20070051954A1

公开(公告)日：2007-03-08

申请号：US11515578

申请日：2006-09-05

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01L29/04

CPC classification number: H01L27/1255 ,  H01L27/1248

Abstract: An exemplary thin film transistor (TFT) array substrate includes a glass substrate (430), a semiconductor layer (440) formed on the glass substrate, a gate insulating layer (407) formed on the semiconductor layer, and a plurality of gate electrodes (410) and common electrodes (411) formed on the gate insulating layer. A portion of the gate insulating layer corresponding to the common electrode includes introduced impurities to enhance a dielectric constant thereof. A method for manufacturing the TFT array substrate is also provided.

Abstract translation: 示例性薄膜晶体管（TFT）阵列基板包括玻璃基板（430），形成在玻璃基板上的半导体层（440），形成在半导体层上的栅绝缘层（407）和多个栅电极 410）和形成在栅极绝缘层上的公共电极（411）。 对应于公共电极的栅极绝缘层的一部分包括引入的杂质以增强其介电常数。 还提供了一种用于制造TFT阵列基板的方法。