公开(公告)号：US20100227458A1

公开(公告)日：2010-09-09

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20 ,  C23C16/48

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US20100208308A1

公开(公告)日：2010-08-19

申请号：US12708272

申请日：2010-02-18

申请人： Kyung-Ho PARK ,  Dong-Hyun Lee ,  Jae-Myung Baek

发明人： Kyung-Ho PARK ,  Dong-Hyun Lee ,  Jae-Myung Baek

IPC分类号： H04N1/40 ,  H04N1/00

CPC分类号： H04N1/107 ,  G06K9/228 ,  G06K2209/01 ,  H04N1/1071

摘要： A method and apparatus are provided for recognizing characters in a portable terminal with a scan module. Scanned image data is generated by the scan module by scanning a scan target through a scanning-light input/output panel provided on an external surface of the portable terminal as the portable terminal moves across the scan target. Part of the scanned image data is deleted when a current moving speed of the portable terminal is less than a lower limit of an optimal scan speed range, and character recognition is performed on remaining scanned image data. Image data most similar to the scanned image data is detected from a previously stored correction image database when the current moving speed is greater than an upper limit of the optimal scan speed range, and characters corresponding to the detected image data are output as character recognition results.

摘要翻译： 提供了一种利用扫描模块识别便携式终端中的字符的方法和装置。 扫描图像数据由扫描模块通过扫描目标通过便携式终端在扫描目标上移动而设置在便携式终端的外部表面上的扫描光输入/输出面板产生。 当便携式终端的当前移动速度小于最佳扫描速度范围的下限时，扫描图像数据的一部分被删除，并且对剩余的扫描图像数据执行字符识别。 当当前移动速度大于最佳扫描速度范围的上限时，从先前存储的校正图像数据库中检测到与扫描图像数据最相似的图像数据，并且输出与检测到的图像数据相对应的字符作为字符识别结果 。

公开(公告)号：US07495412B2

公开(公告)日：2009-02-24

申请号：US11702347

申请日：2007-02-05

申请人： Dong-Hyun Lee

发明人： Dong-Hyun Lee

IPC分类号： H02P23/00

CPC分类号： H02P27/08 ,  H02P7/29

摘要： A pulse width modulator includes a discrete time oscillator, a data storage device, a data processing block, a counter, and a comparator. The discrete time oscillator generates a first address of bits used by the data processing block for reading first data from the data storage device. The data processing block generates second data from the first data and at least one bit of the first address bits. The comparator generates a pulse width modulation signal by comparing the second data and a digital count generated by the counter.

摘要翻译： 脉宽调制器包括离散时间振荡器，数据存储装置，数据处理块，计数器和比较器。 离散时间振荡器产生由数据处理块用于从数据存储装置读取第一数据的位的第一地址。 数据处理块从第一数据和第一地址位的至少一位产生第二数据。 比较器通过比较第二数据和由计数器产生的数字计数器来产生脉宽调制信号。

公开(公告)号：US06785931B2

公开(公告)日：2004-09-07

申请号：US10328244

申请日：2002-12-23

申请人： Dong-Hyun Lee ,  Young-Ki Kim

发明人： Dong-Hyun Lee ,  Young-Ki Kim

IPC分类号： B60S132

CPC分类号： B60S1/4038 ,  B60S1/4064 ,  Y10T403/18 ,  Y10T403/32951 ,  Y10T403/32959 ,  Y10T403/58 ,  Y10T403/581 ,  Y10T403/606

摘要： Disclosed is a spacer of a windshield wiper for a vehicle including an upper panel, a pair of side panels extending downwardly from opposite lateral ends of the upper panel while defining a receiving space therebetween, the side panels being centrally formed with through holes, respectively, and annular protrusions protruded, toward each other, from the side panels around the through holes, and adapted to be fitted in through holes formed at an element of the windshield wiper to be assembled with the spacer, respectively. Each of the protrusions has a tapered structure having a diameter gradually reduced toward a free end of the protrusion, while having an annular step formed at the free end of each of the protrusions, and a plurality of slits formed at the annular step. In accordance with this structure, it is possible to prevent the spacer from being separated from an associated element of the windshield wiper upon assembling the elements of the windshield, while increasing the clamping force of the spacer, thereby minimizing the clearance defined between the spacer and the associated element.

摘要翻译： 公开了一种用于车辆的挡风玻璃刮水器的间隔件，其包括上板，一对侧板，其在上板的相对的横向端部向下延伸，同时在其间限定了容纳空间，侧板分别中心地形成有通孔， 并且环形突起从侧板围绕通孔彼此突出，并且适于嵌入形成在挡风玻璃刮水器的元件上的通孔中，以分别与间隔件组装。 每个突起具有锥形结构，其具有朝向突起的自由端逐渐减小的直径，同时具有形成在每个突起的自由端的环形台阶和在环形台阶处形成的多个狭缝。 根据该结构，在组装挡风玻璃的元件的同时，可以防止间隔件与挡风玻璃刮水器的相关元件分离，同时增加间隔件的夹紧力，从而最小化间隔件和 相关联的元素。

公开(公告)号：US5889849A

公开(公告)日：1999-03-30

申请号：US769086

申请日：1996-12-18

申请人： Dong-Soo Ban ,  Jung-Yul Park ,  Dong-Hyun Lee ,  Rha Soh

发明人： Dong-Soo Ban ,  Jung-Yul Park ,  Dong-Hyun Lee ,  Rha Soh

IPC分类号： H04W76/04 ,  H04W92/02 ,  H04W92/24 ,  H04M7/00

CPC分类号： H04W76/04 ,  H04W92/02 ,  H04W92/24

摘要： An improved common-channel message conversion method for a communication network interface between exchange systems which is capable of directly interfacing a DCN network and AMPS network by converting different message formats of a common-channel signalling method of a DCN network and AMPS network in one exchange system and coinciding different parameter values and operation between hierarchical structures.

摘要翻译： 一种用于交换系统之间的通信网络接口的改进的公共信道消息转换方法，其能够通过在一个交换机中转换DCN网络和AMPS网络的公共信道信令方法的不同消息格式来直接连接DCN网络和AMPS网络 系统并重合不同的参数值和层次结构之间的操作。

公开(公告)号：US09142405B2

公开(公告)日：2015-09-22

申请号：US12964028

申请日：2010-12-09

申请人： Yong-Duck Son ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Yong-Duck Son ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC分类号： H01L21/0245 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

摘要翻译： 1.一种薄膜晶体管，包括设置在基板上的第一多晶半导体层，设置在所述第一多晶半导体层上的第二多晶半导体层，以及配置为与所述第一多晶半导体层相邻并且以特定间隔彼此间隔开的金属催化剂。

公开(公告)号：US09117798B2

公开(公告)日：2015-08-25

申请号：US12714137

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Hyun-Gue Kim ,  Maxim Lisachenko ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Hyun-Gue Kim ,  Maxim Lisachenko ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi

IPC分类号： H01L29/04 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32 ,  H01L27/12

CPC分类号： H01L29/42384 ,  H01L27/1248 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78627

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

摘要翻译： 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管（OLED）显示装置。 薄膜晶体管包括基板; 半导体层，设置在所述基板上并且包括沟道区域; 源/漏区包括离子和偏移区; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的第一绝缘层; 设置在所述第一绝缘层上的第二绝缘层; 以及设置在第二绝缘层上的源/漏电极，并分别电连接到半导体层的源/漏区。 在源极/漏极区上的栅极绝缘层和第一绝缘层的厚度之和小于源极/漏极区域中包含的离子的垂直分散深度。

公开(公告)号：US09070717B2

公开(公告)日：2015-06-30

申请号：US12890002

申请日：2010-09-24

申请人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

发明人： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

摘要翻译： 一种制造具有包括多晶硅层的薄膜晶体管的有机发光二极管（OLED）显示装置的方法。 制造多晶硅层的方法包括在衬底上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散到缓冲层，去除金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US09034156B2

公开(公告)日：2015-05-19

申请号：US12948650

申请日：2010-11-17

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/18

CPC分类号： C23C14/3407 ,  C23C14/185 ,  C23C14/34 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3438

摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.

摘要翻译： 提供一种溅射装置，其以非常低的浓度将金属催化剂沉积在非晶硅层上以使非晶硅结晶，并且特别地最小化由预溅射工艺引起的金属催化剂的不均匀性而不降低工艺效率。 该溅射装置以非常低的浓度提高沉积在非晶硅层上的金属催化剂的均匀性。 溅射装置包括具有第一和第二区域的处理室，位于处理室内的金属靶，移动金属靶的靶转印单元，具有用于控制从金属靶排出的金属催化剂的行进方向的第一屏蔽件， 以及设置在所述第二区域中以能够面对所述金属靶的衬底保持器。 作为装载在基板保持架上的基板与金属对象物之间的距离的线性距离与第一屏蔽件的长度之间的距离差小于3cm。

公开(公告)号：US08992749B2

公开(公告)日：2015-03-31

申请号：US12948650

申请日：2010-11-17

申请人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Tae-Hoon Yang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Byung-Soo So ,  Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Ivan Maidanchuk ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/18

摘要： Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target. A distance difference between a linear distance, which is a distance between a substrate loaded on the substrate holder and the metal target, and a length of the first shield is less than 3 cm.