公开(公告)号：US20120100486A1

公开(公告)日：2012-04-26

申请号：US13243204

申请日：2011-09-23

申请人： Masayoshi Sagehashi ,  Youichi Ohsawa ,  Koji Hasegawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

发明人： Masayoshi Sagehashi ,  Youichi Ohsawa ,  Koji Hasegawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

IPC分类号： G03F7/20 ,  C07J33/00 ,  C07D333/46

CPC分类号： C07D493/18 ,  C07D333/46 ,  C07D409/12 ,  C07J31/006 ,  C07J33/002 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

摘要： A sulfonium salt of a naphthyltetrahydrothiophenium cation having a fluoroalkoxy chain with a specific anion is provided. The sulfonium salt is used as a photoacid generator to form a resist composition which when processed by immersion lithography, offers advantages of restrained dissolution in the immersion water and less pattern dependence or dark/bright bias.

摘要翻译： 提供了具有特定阴离子的氟烷氧基链的萘基四氢噻吩阳离子的锍盐。 锍盐用作光致酸发生剂以形成抗蚀剂组合物，当通过浸渍光刻加工时，提供了在浸水中抑制溶解和较少图案依赖性或暗/亮偏压的优点。

公开(公告)号：US07919226B2

公开(公告)日：2011-04-05

申请号：US12222645

申请日：2008-08-13

申请人： Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Katsuhiro Kobayashi

发明人： Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Katsuhiro Kobayashi

IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C309/06

CPC分类号： C07C309/12 ,  C07C381/12 ,  C07D307/64 ,  C07D307/68 ,  C07D333/46 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126

摘要： Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

摘要翻译： 磺酸盐具有式：CF 3 -CH（OCOR）-CF 2 SO 3 -M +，其中R是C 1 -C 20烷基或C 6 -C 14芳基，M +是锂，钠，钾，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。

公开(公告)号：US20100316955A1

公开(公告)日：2010-12-16

申请号：US12815787

申请日：2010-06-15

申请人： Keiichi Masunaga ,  Akinobu Tanaka ,  Daisuke Domon ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi

发明人： Keiichi Masunaga ,  Akinobu Tanaka ,  Daisuke Domon ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0392 ,  G03F7/0045

摘要： A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.

摘要翻译： 使用包含高比例的含芳环结构的单元并在侧链上含有芳族磺酸锍盐的聚合物形成化学放大的正性光致抗蚀剂组合物，该组合物有效地形成具有高耐蚀刻性的抗蚀剂图案。 该聚合物克服了用于聚合和纯化的溶剂溶解和抗蚀剂溶剂中的问题。

公开(公告)号：US07531290B2

公开(公告)日：2009-05-12

申请号：US11588413

申请日：2006-10-27

申请人： Katsuhiro Kobayashi ,  Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

发明人： Katsuhiro Kobayashi ,  Youichi Ohsawa ,  Takeshi Kinsho ,  Takeru Watanabe

IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  C07C303/32

CPC分类号： C07C381/12 ,  C07C309/07 ,  G03F7/0045 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

摘要： Sulfonate salts have the formula: R1SO3—CH(Rf)—CF2SO3−M+ wherein R1 is alkyl or aryl, Rf is H or trifluoromethyl, and M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

摘要翻译： 磺酸盐具有下式：<？in-line-formula description =“In-line Formulas”end =“lead”？> R1SO3-CH（Rf）-CF2SO3-M + <？in-line-formula description =“In- 其中R1是烷基或芳基，Rf是H或三氟甲基，M +是Li，Na，K，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。

公开(公告)号：US20090061358A1

公开(公告)日：2009-03-05

申请号：US12204685

申请日：2008-09-04

申请人： Masaki OHASHI ,  Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho

发明人： Masaki OHASHI ,  Youichi Ohsawa ,  Takeru Watanabe ,  Takeshi Kinsho

IPC分类号： G03F7/004 ,  G03F7/20 ,  C07J5/00 ,  C07J43/00

CPC分类号： C07J31/006 ,  C07J41/0055 ,  C07J43/003 ,  G03F7/0045 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/114

摘要： Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R1—COOCH(CF3)CF2SO3+H+  (1a) R1—O—COOCH(CF3)CF2SO3−H+  (1c) R1 is a C20-C50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

摘要翻译： 光生酸发生剂在暴露于高能量辐射时产生式（1a）或（1c）的磺酸。 <？in-line-formula description =“In-line formula”end =“lead”？> R1-COOCH（CF3）CF2SO3 + H +（1a）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R1-O-COOCH（CF3）CF2SO3-H +（1c） =“内联式”末端=“尾”→R1是具有类固醇结构的C20-C50烃基。 光致酸产生剂与树脂相容并且可以控制酸扩散，因此适用于化学增幅抗蚀剂组合物。

公开(公告)号：US20070037091A1

公开(公告)日：2007-02-15

申请号：US11583041

申请日：2006-10-19

申请人： Ryuji Koitabashi ,  Satoshi Watanabe ,  Youichi Ohsawa

发明人： Ryuji Koitabashi ,  Satoshi Watanabe ,  Youichi Ohsawa

IPC分类号： G03C1/00

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/123

摘要： A chemically amplified positive resist composition comprising a specific 2,4,6-triisopropylbenzenesulfonate compound as a photoacid generator, a polymer which changes its solubility in an alkaline developer under the action of acid, and a basic compound has a high sensitivity, a high contrast of dissolution of resist film, a high resolution, and good storage stability.

摘要翻译： 包含特定的2,4,6-三异丙基苯磺酸盐化合物作为光酸产生剂的化学放大阳性抗蚀剂组合物，在酸性作用下改变其在碱性显影剂中的溶解度的聚合物和碱性化合物具有高灵敏度，高对比度 抗蚀剂膜的溶解，高分辨率和良好的储存稳定性。

公开(公告)号：US07109311B2

公开(公告)日：2006-09-19

申请号：US10776159

申请日：2004-02-12

申请人： Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Yoshitaka Yanagi ,  Kazunori Maeda

发明人： Youichi Ohsawa ,  Katsuhiro Kobayashi ,  Yoshitaka Yanagi ,  Kazunori Maeda

IPC分类号： C07C317/28 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0392

摘要： A chemical amplification type resist composition comprising a specific benzenesulfonyldiazomethane containing a long-chain alkoxyl group at the 2-position on benzene ring has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.

摘要翻译： 包含在苯环上2位具有长链烷氧基的特定苯磺酰基重氮甲烷的化学放大型抗蚀剂组合物具有改进的分辨率，改善的聚焦纬度，即使在长期PED下也能最小化线宽变化或形状退化的优点， 在涂布，显影和剥离后留下的碎片最小化，显影后的图案轮廓改善，因此适用于微细加工。

公开(公告)号：US20060188810A1

公开(公告)日：2006-08-24

申请号：US11354204

申请日：2006-02-15

申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

IPC分类号： G03C1/76

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator. The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.

摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。

公开(公告)号：US20060160023A1

公开(公告)日：2006-07-20

申请号：US11373925

申请日：2006-03-13

申请人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

发明人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

IPC分类号： G03C1/76

CPC分类号： G03F7/0045 ,  C07D327/06 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

公开(公告)号：US20060073413A1

公开(公告)日：2006-04-06

申请号：US11242270

申请日：2005-10-04

申请人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

发明人： Katsuya Takemura ,  Kazumi Noda ,  Youichi Ohsawa

IPC分类号： G03C1/76

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： A resist composition is provided comprising a polysiloxane, a specific acid generator, a nitrogen-containing organic compound, and a solvent. The resist composition exerts high-resolution performance without the problem of a T-top profile and is suited for the bilayer resist process using ArF exposure.