Polymers, positive resist compositions and patterning process
    61.
    发明申请
    Polymers, positive resist compositions and patterning process 有权
    聚合物,正性抗蚀剂组合物和图案化工艺

    公开(公告)号:US20070207408A1

    公开(公告)日:2007-09-06

    申请号:US11713763

    申请日:2007-03-05

    IPC分类号: G03C1/00

    摘要: A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.

    摘要翻译: 聚合物由羟基乙烯基萘的重复单元,具有与桥环稠合的内酯环的(甲基)丙烯酸单元和具有酸不稳定基的(甲基)丙烯酸单元组成。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度,高分辨率和由于显影过程中控制的膨胀引起的最小线边缘粗糙度。

    Positive resist compositions and patterning process
    62.
    发明申请
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US20070072115A1

    公开(公告)日:2007-03-29

    申请号:US11523792

    申请日:2006-09-20

    IPC分类号: G03C1/00

    摘要: A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development, and leaves minimal residues following development.

    摘要翻译: 聚合物得自具有桥环内酯基的(甲基)丙烯酸酯,具有酸不稳定离去基的(甲基)丙烯酸酯和具有羟基萘基侧基的(甲基)丙烯酸酯。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度,高分辨率和由于显影期间的受控膨胀引起的最小线边缘粗糙度,并且在显影后留下最少残留物 。

    Positive resist composition, and patterning process using the same
    63.
    发明申请
    Positive resist composition, and patterning process using the same 审中-公开
    正型抗蚀剂组合物和使用其的图案化工艺

    公开(公告)号:US20060183051A1

    公开(公告)日:2006-08-17

    申请号:US11339590

    申请日:2006-01-26

    IPC分类号: G03C1/76

    CPC分类号: G03F7/0392

    摘要: The present invention-provides a positive resist composition wherein at least a polymer included in a base resin has a repeating unit with an acid labile group having absorption at the 248 nm wavelength light and the repeating unit is included with a ratio of 1-10% of all repeating units of polymers included in the base resin. There can be provided a positive resist composition with equal or higher sensitivity and resolution than those of conventional positive resist compositions, and in particular, by which a pattern profile on a substrate with high reflectivity is excellent and generation of a standing wave and line edge roughness are reduced.

    摘要翻译: 本发明提供一种正型抗蚀剂组合物,其中至少包含在基础树脂中的聚合物具有在248nm波长的光下具有吸收性的酸不稳定基团的重复单元,重复单元的比例为1-10% 包括在基础树脂中的聚合物的所有重复单元。 可以提供与常规正性抗蚀剂组合物相同或更高的灵敏度和分辨率的正性抗蚀剂组合物,特别是通过其具有高反射率的基板上的图案轮廓优异并产生驻波和线边缘粗糙度 减少了

    Chemical amplification, positive resist compositions
    64.
    发明授权
    Chemical amplification, positive resist compositions 有权
    化学放大,正光刻胶组合物

    公开(公告)号:US06682869B2

    公开(公告)日:2004-01-27

    申请号:US09799052

    申请日:2001-03-06

    IPC分类号: G03F7004

    摘要: A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: Ph—(CH2)nOCH(CH2CH3)— wherein Ph is phenyl and n=1 or 2. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

    摘要翻译: 提供化学放大正性抗蚀剂组合物,其包含(A)光酸产生剂和(B)在酸的作用下改变其在碱显影剂中的溶解度并具有下式的取代基的树脂:Ph-(CH 2)n OCH(CH 2 CH 3 ) - 其中Ph是苯基并且n = 1或2.组合物具有许多优点,包括改进的焦点纬度,改进的分辨率,最小化的线宽变化或形状退化,即使在长期PED上,涂覆后剩余的最小化缺陷,显影和剥离, 并且在显影后改进的图案轮廓,并且适用于通过任何光刻,特别是深UV光刻的微细加工。

    Silacyclohexane compound, a process for producing the same, and a liquid
crystal composition comprising the same
    65.
    发明授权
    Silacyclohexane compound, a process for producing the same, and a liquid crystal composition comprising the same 失效
    硅环己烷化合物,其制造方法以及含有它们的液晶组合物

    公开(公告)号:US5725797A

    公开(公告)日:1998-03-10

    申请号:US742626

    申请日:1996-10-31

    摘要: For the purpose of improving the characteristics of a liquid crystal substance, there is provided a silacyclohexane compound represented by the general formula (I): ##STR1## wherein R represents a specific straight-chain alkyl group, mono or difluoro alkyl group, branched-chain alkyl group, alkoxyalkyl group, and alkenyl group; at least one of rings A and B represent a trans-1-sila-1,4-cyclohexylene group or a trans-4-sila-1,4-cyclohexylene group both having a substituent group H, F, Cl, CH.sub.3 or Ar (Ar stands for a phenyl or tolyl group) on silicon at the 1 or 4 position, and the other group, if any, represents a trans-1,4-cyclohexylene group or ##STR2## Z represents CN, F, Cl, CF.sub.3, CClF.sub.2, CHClF, OCF.sub.3, OCClF.sub.2, OCHF.sub.2, OCHClF, R, or OR; L.sub.1 represents H, F or Cl; L.sub.2 and L.sub.3 stand independently for H or F; i represents an integer of 0 to 2; m is 1 or 2; n is 0 or 1; and if m is 2, the two rings may be the same or different.

    摘要翻译: 为了改善液晶物质的特性,提供了由通式(I)表示的硅环己烷化合物:其中R表示特定的直链烷基,单或二氟烷基 ,支链烷基,烷氧基烷基和烯基; 环A和B中的至少一个表示具有取代基H,F,Cl,CH 3或Ar的反式-1-硅烷-1,4-亚环己基或反式-4-硅烷-1,4-亚环己基 (Ar表示苯基或甲苯基),另一组(如果有的话)表示反式-1,4-亚环己基或Z表示CN,F,Cl,CF 3 ,CClF 2,CHClF,OCF 3,OCClF 2,OCHF 2,OCHClF,R或OR; L 1表示H,F或Cl; L2和L3独立地用于H或F; i表示0〜2的整数, m为1或2; n为0或1; 如果m为2,则两个环可以相同或不同。

    Polyimide silicone, photosensitive resin composition containing the novel polyimide silicone, and method for pattern formation
    66.
    发明授权
    Polyimide silicone, photosensitive resin composition containing the novel polyimide silicone, and method for pattern formation 有权
    聚酰亚胺硅酮,含有新型聚酰亚胺硅酮的感光性树脂组合物,以及图案形成方法

    公开(公告)号:US08263308B2

    公开(公告)日:2012-09-11

    申请号:US12722068

    申请日:2010-03-11

    摘要: A polyimide silicone having in the molecule a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group is provided. The polyimide silicone comprises the unit represented by the formula (1): wherein X is a tetravalent group at least a part of which is a tetravalent organic group represented by the formula (2): wherein R1 is a monovalent hydrocarbon group, R2 is a trivalent group, and n is an integer of 1 to 120 on average; and Y is a divalent organic group at least a part of which is a divalent organic group having a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group represented by the formula (3): wherein R3 and R4 are a hydrogen atom or an alkyl group, and R5 is an alkyl group, an aryl group, or an aralkyl group. R3 and R4, R3 and R5, or R4 and R5 may be bonded to each other to form a ring together with the carbon atom or the carbon atom and the oxygen atom to which they are bonded with the proviso that the R3, R4, and R5 are independently an alkylene group.

    摘要翻译: 提供了在分子中具有一部分或全部氢原子被酸不稳定基团取代的酚羟基的聚酰亚胺硅氧烷。 聚酰亚胺硅氧烷包括由式(1)表示的单元:其中X是四价基团,其中至少一部分是由式(2)表示的四价有机基团:其中R 1是一价烃基,R 2是 三价基​​,平均为n为1〜120的整数。 Y为二价有机基团,其中至少一部分为具有酚羟基的二价有机基团,其中部分或全部氢原子被式(3)表示的酸不稳定基团取代:其中R3和 R4是氢原子或烷基,R5是烷基,芳基或芳烷基。 R 3和R 4,R 3和R 5或R 4和R 5可以彼此键合以与碳原子或碳原子和它们所键合的氧原子一起形成环,条件是R3,R4和 R5独立地是亚烷基。

    Positive resist composition and patterning process using the same
    68.
    发明授权
    Positive resist composition and patterning process using the same 有权
    正抗蚀剂组合物和使用其的图案化工艺

    公开(公告)号:US07887991B2

    公开(公告)日:2011-02-15

    申请号:US12320265

    申请日:2009-01-22

    摘要: The present invention provides a polymer, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance, suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).

    摘要翻译: 本发明提供一种聚合物,其具有高灵敏度,高分辨率,曝光后良好的图案构造,另外具有优异的抗蚀刻性,适合作为正性抗蚀剂组合物的基础树脂,特别是用于化学放大阳性 抗蚀剂组成; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于,至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式(1)表示的酸不稳定基团取代的聚合物。

    Negative resist composition and patterning process using the same
    69.
    发明授权
    Negative resist composition and patterning process using the same 有权
    负光刻胶组合物和使用其的图案化工艺

    公开(公告)号:US07655378B2

    公开(公告)日:2010-02-02

    申请号:US11808706

    申请日:2007-06-12

    摘要: There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.

    摘要翻译: 公开了一种负性抗蚀剂组合物,其包含至少包含由以下通式(1)表示的羟基乙烯基萘的重复单元的聚合物。 可以提供负的抗蚀剂组合物,特别是化学放大的负性抗蚀剂组合物,其可以表现出比常规羟基苯乙烯或酚醛清漆阴性抗蚀剂组合物更高的分辨率,其在曝光后提供优异的图案轮廓并且表现出优异的耐蚀刻性; 以及使用抗蚀剂组合物的图案化工艺。

    Chemically-amplified positive resist composition and patterning process thereof
    70.
    发明申请
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号:US20100009286A1

    公开(公告)日:2010-01-14

    申请号:US12457327

    申请日:2009-06-08

    IPC分类号: G03F7/004 G03F7/20

    摘要: There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译: 公开了一种化学增幅正型抗蚀剂组合物,其包含作为主要成分的(A)基质聚合物,其包含一种或多种由以下通式(1)表示的单体单元等,并且为碱 (B)含有磺酸根阴离子的锍盐,(C)碱性成分和(D)有机溶剂,其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中,需要非常高的时间稳定性。 另外,它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物,使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。