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公开(公告)号:US4306951A
公开(公告)日:1981-12-22
申请号:US154645
申请日:1980-05-30
申请人: Steven W. Depp , Kurt E. Petersen
发明人: Steven W. Depp , Kurt E. Petersen
IPC分类号: C25F3/12 , C25F3/14 , H01L21/3063
CPC分类号: C25F3/12 , C25F3/14 , H01L21/3063
摘要: A method of electrochemically etching a semiconductor to a predetermined contour includes positioning at least one electrode on one side of the semiconductor and then applying a voltage to the electrodes so as to generate a varying current density vertically through the semiconductor and thereby electrochemically etch the mask-free other side of the semiconductor.
摘要翻译: 将半导体电化学蚀刻到预定轮廓的方法包括将半导体的一侧上的至少一个电极定位,然后向电极施加电压,以便通过半导体垂直产生变化的电流密度,从而电化学蚀刻掩模 - 半自动的另一面。