公开(公告)号：US20080073286A1

公开(公告)日：2008-03-27

申请号：US11902452

申请日：2007-09-21

申请人： Eishi Shiobara

发明人： Eishi Shiobara

IPC分类号： B05C11/10 ,  C02F1/00

CPC分类号： G05D11/133 ,  C02F1/008 ,  C02F2103/346

摘要： This invention discloses a waste liquid processing method in a semiconductor manufacturing process. The waste liquids of a plurality of chemical solutions are mixed. The mixing ratio of the plurality of solutions in a waste liquid mixture generated by mixing is obtained. It is determined whether the obtained mixing ratio satisfies or is predicted not to satisfy a predetermined condition. If the mixing ratio does not satisfy or is predicted not to satisfy the condition, the waste liquid mixture is diluted with a diluent to satisfy the condition.

摘要翻译： 本发明公开了一种半导体制造工序中的废液处理方法。 将多种化学溶液的废液混合。 获得通过混合产生的废液混合物中的多种溶液的混合比。 确定所获得的混合比是否满足或被预测为不满足预定条件。 如果混合比不满足或预测不满足条件，则用稀释剂稀释废液混合物以满足条件。

公开(公告)号：US20060189147A1

公开(公告)日：2006-08-24

申请号：US11342048

申请日：2006-01-30

申请人： Eishi Shiobara ,  Takehiro Kondoh ,  Yuji Kobayashi ,  Koutarou Sho

发明人： Eishi Shiobara ,  Takehiro Kondoh ,  Yuji Kobayashi ,  Koutarou Sho

IPC分类号： G03C1/76 ,  H01L21/302

CPC分类号： G03F7/40 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/3088 ,  Y10S430/151

摘要： A pattern forming method includes the following teps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.

摘要翻译： 图案形成方法包括以下脚趾。 在被处理膜上形成抗蚀剂图案。 形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。 执行掩模图案的减肥。

公开(公告)号：US20060102614A1

公开(公告)日：2006-05-18

申请号：US11304549

申请日：2005-12-16

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： H05B3/68

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.