公开(公告)号：US07758929B2

公开(公告)日：2010-07-20

申请号：US11691678

申请日：2007-03-27

申请人： Yohei Yamazawa ,  Noriaki Imai

发明人： Yohei Yamazawa ,  Noriaki Imai

IPC分类号： H05H1/24

CPC分类号： H01J37/32321 ,  H01J37/32091 ,  H01J37/32183 ,  H01L21/3065

摘要： In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to at least one of an upper electrode and a lower electrode disposed to vertically face each other in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member.

摘要翻译： 在等离子体处理装置中，其中来自射频电源的射频功率被提供给在处理容器中彼此垂直设置的上电极和下电极中的至少一个，从而在 处理容器，处理基板的等离子体，通过在处理容器中产生的等离子体中的离子进入而将通过处理基板进入处理容器所需的化学成分发出的化学成分发射部件 并且将处理容器中产生的等离子体的化学成分发射部件侧的阻抗变化电路的阻抗变化电路与射频电源的频率连接，并与化学成分发射部件连接。

公开(公告)号：US08529730B2

公开(公告)日：2013-09-10

申请号：US13419116

申请日：2012-03-13

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

摘要翻译： 在包括真空排空处理室的等离子体处理装置中，在处理室中设置用于支撑待处理基板的第一下部电极，在第一下部电极的上方配置有上部电极，以面对第一下部电极。 此外，第二下电极设置在第一下电极下方，同时与第一下电极电隔离。 处理气体供给单元将处理气体供给到上部电极和第一下部电极之间的空间。 第一高频电源单元将第一频率的第一高频功率施加到第一下电极，第二高频电源单元将第二频率高于第一频率的第二高频功率施加到第二低频电源 电极。

公开(公告)号：US08415885B2

公开(公告)日：2013-04-09

申请号：US13051689

申请日：2011-03-18

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： H05H1/24 ,  C23C14/34 ,  C23C16/00 ,  H01J7/24

CPC分类号： H01J37/321 ,  H01J37/32174

摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode.

摘要翻译： 一种等离子体处理装置，包括：真空排气处理室，其至少一部分由电介质窗形成; 用于在处理室中支撑目标衬底的衬底支撑单元; 以及处理气体供应单元，用于将期望的处理气体供应到处理室中。 此外，等离子体处理装置包括设置在电介质窗外部的RF天线; 用于向RF天线提供高频功率的高频电源单元; 并且在并行模式，乘法模式和最小化串行模式之间切换的交换网络。

公开(公告)号：US08261691B2

公开(公告)日：2012-09-11

申请号：US12271503

申请日：2008-11-14

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32366

摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for mounting thereon a substrate to be processed in the processing chamber; a second electrode facing the first electrode in parallel in the processing chamber; and a processing gas supply unit for supplying a processing gas to a processing space between the first and the second electrode. The apparatus further includes a first high frequency power supply for applying a first high frequency power for generating a plasma of the processing gas to at least one of the first and the second electrode; and a cavity plasma generation unit, having a cavity formed in one of the first and the second electrode, for generating a plasma of a discharging gas in the cavity.

摘要翻译： 等离子体处理装置包括真空排气处理室; 第一电极，用于在处理室中安装待处理的基板; 在所述处理室中平行面对所述第一电极的第二电极; 以及处理气体供给单元，用于将处理气体供给到第一和第二电极之间的处理空间。 该装置还包括第一高频电源，用于将第一高频功率用于产生处理气体的等离子体至少至少一个第一和第二电极; 以及空腔等离子体生成单元，其具有形成在第一和第二电极之一中的空腔，用于在空腔中产生排出气体的等离子体。

公开(公告)号：US08157953B2

公开(公告)日：2012-04-17

申请号：US11692363

申请日：2007-03-28

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode.

摘要翻译： 在包括真空排空处理室的等离子体处理装置中，在处理室中设置用于支撑待处理基板的第一下部电极，在第一下部电极的上方配置有上部电极，以面对第一下部电极。 此外，第二下电极设置在第一下电极下方，同时与第一下电极电隔离。 处理气体供给单元将处理气体供给到上部电极和第一下部电极之间的空间。 第一高频电源单元将第一频率的第一高频功率施加到第一下电极，第二高频电源单元将第二频率高于第一频率的第二高频功率施加到第二低频电源 电极。

公开(公告)号：US07993487B2

公开(公告)日：2011-08-09

申请号：US11692340

申请日：2007-03-28

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32935

摘要： In the present invention, two coil-shaped probes each detecting the intensity of a magnetic field in a direction around a center axis of a processing space are provided in a process vessel of a plasma processing apparatus. Each of the probes detects an induced electromotive force generated in the coil, and a computer calculates an amount of radio-frequency current from the induced electromotive force, based on a predetermined calculation principle. A difference between the amounts of the radio-frequency current detected by the probes is calculated, and a loss radio-frequency current amount passing out of a plasma area between upper and lower electrodes is calculated, whereby the flow of the radio-frequency current in the plasma is known.

摘要翻译： 在本发明中，在等离子体处理装置的处理容器中设置有两个在处理空间的中心轴方向上检测磁场强度的线圈形探针。 每个探针检测线圈中产生的感应电动势，并且计算机基于预定的计算原理从感应电动势计算射频电流量。 计算由探针检测的射频电流量之间的差异，并计算从上，下电极之间的等离子体区域流出的损失射频电流量，由此，射频电流 等离子体是已知的。

公开(公告)号：US07915900B2

公开(公告)日：2011-03-29

申请号：US12055689

申请日：2008-03-26

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： G01R27/00 ,  H01J7/24

CPC分类号： G01R27/02

摘要： A measuring system measuring an impedance of an object to be measured, including an impedance measuring instrument; a casing formed of a grounded conductor and capable of locating the object to be measured therein; and a radially-shaped electrode connected to the impedance measuring instrument and capable of being connected to the object to be measured.

摘要翻译： 测量被测物体的阻抗的测量系统，包括阻抗测量仪器; 由接地导体形成并且能够定位待测物体的壳体; 以及连接到阻抗测量仪器并且能够连接到待测量对象的径向形状的电极。

公开(公告)号：US07712436B2

公开(公告)日：2010-05-11

申请号：US12025996

申请日：2008-02-05

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： C23C16/00 ,  C23F1/02

CPC分类号： H01J37/32091 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67098

摘要： A plasma processing apparatus includes a first high frequency power for outputting a first high frequency, electrically connected to a first electrode disposed inside a depressurizable processing chamber; a heater power supply electrically connected to a heating element provided in the first electrode via filter circuits for reducing noise of the first high frequency. The plasma processing apparatus further includes air core primary inductors provided in primary stages of the filter circuits when seen from the heating element; and a grounded conductive case for surrounding or accommodating the primary inductors.

摘要翻译： 等离子体处理装置包括用于输出第一高频的第一高频电力，电连接到设置在可减压处理室内的第一电极; 加热器电源，其通过用于降低第一高频噪声的滤波电路与连接在第一电极上的加热元件电连接。 等离子体处理装置还包括当从加热元件观察时设置在滤波器电路的初级中的空芯初级电感器; 以及用于围绕或容纳主电感器的接地导电壳体。

公开(公告)号：US07611603B2

公开(公告)日：2009-11-03

申请号：US11691706

申请日：2007-03-27

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： C23F1/02 ,  C23C16/00 ,  H01J7/24

CPC分类号： H01J37/32183 ,  H01J37/32091

摘要： There is provided a plasma processing apparatus which processes a substrate by generating plasma in a process vessel by supply of radio frequency power from a radio frequency power source to at least one of a pair of vertically opposed electrodes disposed in the process vessel, the apparatus including an impedance varying circuit which is connected to at least one of the pair of electrodes and in which an impedance varying part varying impedance on the electrode side of the plasma generated in the process vessel and a resistor are connected in series.

摘要翻译： 提供了一种等离子体处理装置，其通过从射频电源向设置在处理容器中的一对垂直相对电极中的至少一个提供射频功率而在处理容器中产生等离子体来处理衬底，该装置包括 连接到所述一对电极中的至少一个并且其中在所述处理容器中产生的等离子体的电极侧上的阻抗变化部分变化的阻抗和电阻器串联连接的阻抗变化电路。

公开(公告)号：US07432467B2

公开(公告)日：2008-10-07

申请号：US11691803

申请日：2007-03-27

申请人： Yohei Yamazawa

发明人： Yohei Yamazawa

IPC分类号： B23K10/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus performs a desired plasma processing on a target substrate by using a plasma generated from a processing gas by forming a high frequency electric field in an evacuable processing chamber having an electrode. The plasma processing apparatus includes a high frequency power supply for outputting a high frequency power; and a central power feeder connected with a central portion of a rear surface of the electrode to supply the high frequency power from the high frequency power supply to the electrode. The plasma processing apparatus further includes a peripheral power feeder connected with a peripheral portion of the rear surface of the electrode in parallel with the central power feeder to supply the high frequency power from the high frequency power supply to the electrode.

摘要翻译： 等离子体处理装置通过在具有电极的可抽出处理室中形成高频电场，通过使用从处理气体产生的等离子体，在目标基板上进行期望的等离子体处理。 等离子体处理装置包括用于输出高频功率的高频电源; 以及与电极的后表面的中心部分连接的中央供电给电源，以将来自高频电源的高频功率提供给电极。 等离子体处理装置还包括与电极的后表面的周边部分并联连接的外围电力馈送器，与中央供电器并联，以将来自高频电源的高频电力提供给电极。