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公开(公告)号:US6144155A
公开(公告)日:2000-11-07
申请号:US78133
申请日:1998-05-14
申请人: Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
发明人: Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
摘要: An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译: 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层,形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘层由电子供给层的氧化或氮化处理形成,膜厚为50nm以上。 当在电子供给层和薄膜金属电极之间施加电场时,电子发射装置发射电子。