摘要:
Improved heterojunction bipolar transistor (HBT) are disclosed. Inventive devices can attain high cut-off frequency (f.sub.T), exemplarily 80 GHz or higher, and high DC current gain (.beta.), exemplarily 25 or higher. The devices exhibit lateral scaling, permitting reduction in emitter stripe width without unacceptable decrease in .beta.. Exemplarily the stripe width is 1 .mu.m or less. The inventive HBTs are hot electron devices, with the hot electrons in the base region being spatially confined such that relatively few electrons reach the surface of the extrinsic base region. The relatively low bulk and surface recombination rate in the base of inventive HBTs is an important aspect of the invention and makes possible devices having relatively high .beta. and low power consumption. Appropriate choice of base material, namely, a semiconductor material having relatively low intrinsic surface recombination velocity, can result in further reduction of surface recombination, as can, for instance, the use of an appropriate non-alloyed metal base contact. Appropriate choice of collector material can result in improved ballistic transport through the collector depletion region, and novel selection criteria are disclosed. InP, InAs, and In.sub.0.53 Ga.sub.0.47 As are exemplary materials that meet these criteria. Use of a highly doped collector contact region, with dopant level within a relatively narrow concentration range, can also lead to improved device behavior, as can the use of a compound emitter that comprises one or more appropriately placed thin undoped heteroepitaxial layers.
摘要:
Disclosed is an edge-emitting semiconductor laser that has a single waveguiding structure, and that comprises means for reducing the transverse divergence of the far-field pattern of the laser emission. Typically these means comprise reflecting means (preferably transverse distributed Bragg reflectors) disposed parallel to the junction plane of the laser. Lasers according to the invention can have a highly stable single mode output having a substantially symmetrical far field pattern. Disclosed is also an advantageous method of making ridge-waveguide lasers that can, inter alia, be used to make lasers according to the invention. The method is a self-aligned method that does not comprise any critical alignment steps. Thus it is useful for making lasers that have a very narrow ridge waveguide. Such lasers are desirable because they can suppress lateral higher order modes.
摘要:
Various exemplary embodiments relate to an integrated optical device including: a semiconductor waveguide on a substrate; a dielectric waveguide on a substrate optically coupled to the semiconductor waveguide; and a germanium device on the semiconductor waveguide optically coupled to the semiconductor waveguide.
摘要:
Various exemplary embodiments relate to an integrated optical device including: a semiconductor waveguide on a substrate; a dielectric waveguide on a substrate optically coupled to the semiconductor waveguide; and a germanium device on the semiconductor waveguide optically coupled to the semiconductor waveguide.
摘要:
A radiofrequency (rf) signal-processing device offers the possibility of high bandwidth operation. The disclosed device applies principles of microwave photonics and Linear Amplification based on Nonlinear Components (LINC). For some applications, the device may be embodied in an rf amplifier or rf transmitter. In an embodiment, an optical phase modulator is configured to receive an optical carrier signal as input, and further configured so that, when driven by an rf modulation signal, it will produce a complementary pair of optical signals as output. Each of a pair of detectors is configured to convert a respective one of the complementary optical signals to an rf signal. An rf combiner is configured to add the converted radiofrequency signals from the detectors to form an output signal.
摘要:
An apparatus and method for reducing electrical signal intermodulation by processing a balanced electrical signal in the optical domain in a manner adapted to reduce noise and second order intermodulation, and converting the processed optical signal back to an electrical domain signal with either a single or balanced (differential) outputs.
摘要:
According to one embodiment, a microwave photonic band-stop (MPBS) filter uses an electrical input signal to drive an optical Mach-Zehnder modulator. A modulated optical carrier produced by the modulator is applied to an optical filter having at least two tunable spectral attenuation bands that are located substantially symmetrically on either side of the carrier frequency. The resulting filtered optical signal is applied to an optical-to-electrical (O/E) converter to produce an electrical output signal.
摘要:
A radiofrequency (rf) signal-processing device offers the possibility of high bandwidth operation. The disclosed device applies principles of microwave photonics and Linear Amplification based on Nonlinear Components (LINC). For some applications, the device may be embodied in an rf amplifier or rf transmitter. In an embodiment, an optical phase modulator is configured to receive an optical carrier signal as input, and further configured so that, when driven by an rf modulation signal, it will produce a complementary pair of optical signals as output. Each of a pair of detectors is configured to convert a respective one of the complementary optical signals to an rf signal. An rf combiner is configured to add the converted radiofrequency signals from the detectors to form an output signal.
摘要:
In accordance with the present invention, an optical fiber communications system is provided with an adaptive data equalizer to correct for linear disortion of signals transmitted over optical fibers. A feedback signal from a receiver is used to custom tailor the spectral profile of a launched pulse to thereby minimize the distortion of a received pulse. The system uses optical taps for feedback control in order to adapt to changing conditions in the fiber path.
摘要:
A device includes a passive photonic layer located over a substrate and including at least one passive photonic element configured to propagate an optical signal therein. An electronic layer located between said substrate and said passive photonic layer includes at least one electronic device configured to propagate an electrical signal therein. An active photonic layer located over said passive photonic layer includes an active photonic device optically coupled to said passive photonic element and configured to convert between said electrical signal and said optical signal.