公开(公告)号：US20040075396A1

公开(公告)日：2004-04-22

申请号：US10365449

申请日：2003-02-13

发明人： Tomohiro Okumura ,  Tadashi Kimura ,  Yoichiro Yashiro ,  Kenichi Sato ,  Mitsuo Saitoh

IPC分类号： G09G003/10

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32376 ,  H01J37/32935 ,  H05H1/2406 ,  H05H2001/2412

摘要： Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

摘要翻译： 本发明提供一种等离子体处理方法，其通过向所述空间供给气体而向位于所述空间附近的构件供给电力而在所述待处理对象物附近的微型空间的空间中产生微量等离子体处理方法， 从连接到空间的微血浆源的开口发射作用在物体上，并且在物体上形成精细的直线部分。 细长的直线部分在物体上形成，同时使气体沿平行于物体的细线形部分的长度方向流过开口附近。

公开(公告)号：US06660177B2

公开(公告)日：2003-12-09

申请号：US10008236

申请日：2001-11-07

申请人： Jeffrey W. Carr

发明人： Jeffrey W. Carr

IPC分类号： H01L2100

CPC分类号： H01J37/32376 ,  C23C16/0245 ,  C23C16/047 ,  C23C16/513 ,  H01L21/31051 ,  H05H1/30

摘要： Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.

公开(公告)号：US20030209321A1

公开(公告)日：2003-11-13

申请号：US10144015

申请日：2002-05-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hun-Jan Tao ,  Mong-Song Liang

IPC分类号： C23F001/00

CPC分类号： H01L21/67259 ,  H01J37/32376 ,  H01L21/67253

摘要： An apparatus and method for controllably etching a semiconductor wafer fabricated by a semiconductor processing system. Generally, an etcher is associated with the semiconductor processing system, such that etcher includes one or more electrodes thereof. An electrode position monitor can then be utilized for monitoring a position of the electrode, thereby permitting an adjustable size control of the etch head, which is controllable according to an associated etching recipe. The etch head is generally moveable according to a step mode. Such an arrangement thus increases wafer uniformity and precision process control during wafer fabrication and etching.

摘要翻译： 一种用于可控地蚀刻由半导体处理系统制造的半导体晶片的装置和方法。 通常，蚀刻器与半导体处理系统相关联，使得蚀刻器包括其一个或多个电极。 然后可以使用电极位置监视器来监测电极的位置，从而允许根据相关联的蚀刻配方可控制的蚀刻头的可调节尺寸控制。 蚀刻头通常可以根据步骤模式移动。 因此，这样的布置在晶片制造和蚀刻期间增加了晶片的均匀性和精密的工艺控制。

公开(公告)号：US20030155332A1

公开(公告)日：2003-08-21

申请号：US10027646

申请日：2001-12-21

发明人： Saswati Datta ,  John Andrew McDaniel ,  Seyed Farhad Miralai ,  Vesselin Nikolov Shanov

IPC分类号： B23K010/00

CPC分类号： H01J37/32532 ,  A61L2/14 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32376 ,  H05H1/2406 ,  H05H2001/2418

摘要： A plasma generating apparatus and method for treating a surface of a workpiece. This apparatus comprises a power supply 100, at least one powerable electrode connected to the power supply 100, at least one groundable electrode connected to ground, a dielectric separating the at least one powerable electrode and the at least one groundable electrode, a chamber at least partially housing both the powerable electrode and the groundable electrode and a first inlet for admitting a first gas into the chamber such that the first gas can flow between the at least one powerable electrode and the at least one groundable electrode. The at least one powerable electrode and the at least one groundable electrode are disposed in an array. These electrodes are arranged to be on a common side of a workpiece, to provide a portable apparatus.

摘要翻译： 一种用于处理工件表面的等离子体产生装置和方法。 该装置包括电源100，连接到电源100的至少一个电源电极，连接到地的至少一个可接地电极，至少一个电源电极和至少一个可接地电极的绝缘体，至少一个室 部分地容纳可驱动电极和可接地电极;以及第一入口，用于允许第一气体进入室，使得第一气体可以在至少一个可动电极和至少一个可接地电极之间流动。 所述至少一个电源电极和所述至少一个可接地电极被布置成阵列。 这些电极被布置成在工件的公共侧上，以提供便携式设备。

公开(公告)号：US20020104825A1

公开(公告)日：2002-08-08

申请号：US10062494

申请日：2002-02-05

发明人： Michihiko Yanagisawa ,  Tadayoshi Okuya

IPC分类号： C23F001/00

CPC分类号： H01J37/32357 ,  H01J37/32376 ,  H01L21/3065

摘要： To remove nanotopography (unevenness of wavelength: 0.2 mm through 20 mm, wave height: 1 through several hundreds nm) which has already been produced on a surface of a semiconductor wafer which has been regarded as impossible to remove conventionally, a half value width of an etching profile of activated species gas is set to fall in a range equal to or smaller than a wavelength a of nanotopography and equal to or larger than a half thereof. Based on previously measured data of nanotopography, moving speed and locus of injected activated species gas along a surface of a semiconductor wafer are calculated and controlled.

摘要翻译： 为了去除已经在半导体晶片的已经被认为是不可能常规去除的表面上已经产生的纳米形貌（波长不均匀性：0.2mm至20mm，波高：1至几百nm），半值宽度 活性物质气体的蚀刻曲线设定为等于或小于纳米形貌的波长a并等于或大于其一半的范围。 基于先前测量的纳米形貌数据，计算和控制沿着半导体晶片的表面的注入的活化物质气体的移动速度和轨迹。

公开(公告)号：US20020069966A1

公开(公告)日：2002-06-13

申请号：US09736073

申请日：2000-12-13

发明人： David J. Elliott ,  Kenneth J. Harte ,  Larry E. Shephard

IPC分类号： C23F001/00 ,  C23C016/00

CPC分类号： H01J37/32376 ,  C23C16/50 ,  H01J37/32321

摘要： A scanning plasma reactor for exciting reactant gases at a substrate surface including a beam forming module, a gas injection module, a reaction chamber with a window and a vacuum chuck, a gas exhaust module. Radiation from the beam forming module and the reactant gas create an excited plasma zone. The excited plasma zone is translated across the substrate like a windshield wiper blade, or the substrate is conveyed under a fixed gas reaction zone.

摘要翻译： 一种用于在衬底表面激发反应气体的扫描等离子体反应器，包括束形成模块，气体注入模块，具有窗口的反应室和真空吸盘，气体排气模块。 来自波束成形模块和反应气体的辐射产生激发的等离子体区域。 激发的等离子体区域像挡风玻璃刮水片一样平移在基板上，或者基板在固定的气体反应区域下传送。

公开(公告)号：US5688415A

公开(公告)日：1997-11-18

申请号：US453037

申请日：1995-05-30

申请人： David Bollinger ,  Jim Nester

发明人： David Bollinger ,  Jim Nester

IPC分类号： G03F1/20 ,  G03F7/00 ,  B23K10/00

CPC分类号： G03F1/20 ,  G03F7/0007 ,  H01J37/32376 ,  H01J2237/334

摘要： A system for the formation of circuit patterns on a large flat panel display (78) using plasma assisted chemical etching to achieve a uniform or controllably nonuniform etch depth over the entire area of the display. An overlying film (60) is provided on a large flat panel display substrate (12) with a photolithographic mask (62) overlying the film and having a predetermined pattern of openings (64) therethrough. The substrate is placed adjacent a plasma etching tool which has a projected area which is smaller than the area of the surface of the substrate. The etching tool is scanned across the surface of the substrate to transfer the pattern of the photolithographic mask into the film on the surface thereof. Thereafter, the photolithographic mask is removed from the surface of the overlying film. It is desirable to determine thickness profile data for the overlying film, then generate a dwell time versus position map for the overlying film and remove material from the exposed regions of the overlying film according to the dwell time versus position map. The substrate may be glass and the film may be silicon in either the amorphousr or polycrystalline states.

摘要翻译： 一种用于在大型平板显示器（78）上形成电路图案的系统，其使用等离子体辅助化学蚀刻来在显示器的整个区域上实现均匀的或可控地不均匀的蚀刻深度。 在大型平板显示器基板（12）上设置覆盖膜（60），该平板显示器基板（12）具有覆盖在膜上的光刻掩模（62），并且具有穿过其中的预定图案的开口（64）。 将基板放置在等离子体蚀刻工具附近，等离子体蚀刻工具的投影面积小于基板表面的面积。 蚀刻工具跨过衬底的表面扫描，以将光刻掩模的图案转移到其表面上的膜中。 此后，从覆盖膜的表面去除光刻掩模。 期望确定覆盖膜的厚度轮廓数据，然后根据停留时间与位置图生成上覆膜的停留时间与位置图，并从覆盖膜的暴露区域中去除材料。 衬底可以是玻璃，并且膜可以是无定形或多晶态的硅。