公开(公告)号：US20040134414A1

公开(公告)日：2004-07-15

申请号：US10743418

申请日：2003-12-22

Inventor： John South Lewis III ,  Scott Halden Goodwin-Johansson ,  Brian Rhys Stoner ,  Sonia Grego ,  David Edward Dausch

IPC: C30B001/00

CPC classification number: B82Y20/00 ,  C30B5/00 ,  C30B7/005 ,  C30B29/60 ,  G02B6/1225 ,  Y10S117/902 ,  Y10S117/913 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31504

Abstract: A three dimensional photonic crystal and layer-by-layer processes of fabricating the photonic crystal. A substrate is exposed to a plurality of first microspheres made of a first material, the first material being of a type that will bond to the templated substrate and form a self-passivated layer of first microspheres to produce a first layer. The first layer is exposed to a plurality of second microspheres made of a second material, the second material being of a type that will bond to the first layer and form a self-passivated layer of second microspheres. This layering of alternating first and second microspheres can be repeated as desired to build a three dimensional photonic crystal of desired geometry. Charged polymers such as polyelectrolyte coatings can be used to create the bonds.

Abstract translation: 一个三维光子晶体和逐层制造光子晶体的过程。 将基底暴露于由第一材料制成的多个第一微球体中，第一材料是将结合到模板底物并形成第一微球的自钝化层以产生第一层的类型。 第一层暴露于由第二材料制成的多个第二微球，第二材料是将结合到第一层并形成第二微球的自钝化层的类型。 交替的第一和第二微球的这种层叠可以根据需要重复以构建所需几何形状的三维光子晶体。 可以使用带电聚合物如聚电解质涂层来形成结合。

公开(公告)号：US20020053316A1

公开(公告)日：2002-05-09

申请号：US09988233

申请日：2001-11-19

Inventor： Yvon Gris ,  Germaine Troillard ,  Jocelyne Mourier

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C30B29/06 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66287 ,  Y10S117/913

Abstract: The present invention relates to a method of deposition of a silicon layer on a single-crystal silicon substrate, so that the silicon layer is a single-crystal layer, but of different orientation than the substrate, including the steps of defining a window on the substrate; creating inside the window interstitial defects with an atomic proportion lower than one for one hundred; and performing a silicon deposition in conditions generally corresponding to those of an epitaxial deposition, but at a temperature lower than 850null C.

Abstract translation: 本发明涉及一种在单晶硅衬底上沉积硅层的方法，使得硅层是单晶层，但是具有与衬底不同的取向，包括以下步骤：在 基质; 在窗口内创建间隙缺陷，原子比例低于一百; 并且在通常对应于外延沉积的条件下，但在低于850℃的温度下进行硅沉积。

公开(公告)号：US6165265A

公开(公告)日：2000-12-26

申请号：US237378

申请日：1999-01-26

Applicant: Yvon Gris ,  Germaine Troillard ,  Jocelyne Mourier

Inventor： Yvon Gris ,  Germaine Troillard ,  Jocelyne Mourier

IPC: H01L29/73 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/331 ,  H01L29/732 ,  C30B25/16 ,  C30B29/06

CPC classification number: C30B29/06 ,  C30B25/02 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66287 ,  Y10S117/913

Abstract: The present invention relates to a method of deposition of a silicon layer on a single-crystal silicon substrate 11 , so that the silicon layer is a single-crystal layer, but of different orientation than the substrate, including the steps of defining a window 13 on the substrate; creating inside the window interstitial defects 14 with an atomic proportion lower than one for one hundred; and performing a silicon deposition 15 in conditions generally corresponding to those of an epitaxial deposition, but at a temperature lower than 750.degree. C.

Abstract translation: 本发明涉及在单晶硅衬底11上沉积硅层的方法，使得硅层是单晶层，但是具有与衬底不同的取向，包括以下步骤：限定窗口13 在基材上 在窗口内创建间隙缺陷14，原子比例低于一百; 并且在通常对应于外延沉积的条件下，但在低于750℃的温度下进行硅沉积15。

公开(公告)号：US6010797A

公开(公告)日：2000-01-04

申请号：US144984

申请日：1998-09-01

Applicant: Hiroshi Tomita ,  Mami Takahashi

Inventor： Hiroshi Tomita ,  Mami Takahashi

IPC: C30B33/00 ,  B32B9/00 ,  H01L29/76

CPC classification number: C30B29/06 ,  C30B33/00 ,  Y10S117/913 ,  Y10S438/924

Abstract: A method of treating a semiconductor substrate, which comprises the steps of subjecting a surface of the semiconductor substrate to an annealing treatment, performing an etching treatment of the surface of the semiconductor substrate under a condition where the semiconductor substrate is substantially prevented from being etched and a precipitate exposed from the surface of the semiconductor substrate is selectively etched away, and forming a monocrystalline film of a semiconductor material constituting the semiconductor substrate on the surface of the semiconductor substrate.

Abstract translation: 一种处理半导体衬底的方法，包括以下步骤：对半导体衬底的表面进行退火处理，在基本上防止半导体衬底被蚀刻的条件下对半导体衬底的表面进行蚀刻处理， 从半导体衬底的表面露出的沉淀物被选择性地蚀刻掉，并且在半导体衬底的表面上形成构成半导体衬底的半导体材料的单晶膜。

公开(公告)号：US5948162A

公开(公告)日：1999-09-07

申请号：US733069

申请日：1996-10-16

Applicant: Tomofumi Nakamura

Inventor： Tomofumi Nakamura

IPC: H01L21/20 ,  C30B25/02 ,  H01L21/762 ,  C30B25/04

CPC classification number: C30B25/02 ,  C30B29/06 ,  H01L21/2022 ,  H01L21/76294 ,  Y10S117/913

Abstract: An epitaxially grown layer having a large area and an uniform thickness is formed on an insulating layer. The surface of a silicon substrate (2) is oxidized to form a silicon dioxide layer (4) acting as insulating layer. The silicon dioxide layer (4) is then provided with an opening (10) by etching with the aid of resist (6). After removing the resist (6), a silicon seed crystal layer (11) is selectively grown in the opening (10). Next, the silicon dioxide layer (4) is subjected to etchback using hydrofluoric acid, so that the side face (14) of the seed crystal layer (11) is emerged. The following epitaxial growth on the basis of the seed crystal layer (11) is allowed sufficient growth in the lateral direction. As a result, an epitaxially grown layer having (16) a large area and an uniform thickness is realized.

公开(公告)号：US5825055A

公开(公告)日：1998-10-20

申请号：US774713

申请日：1997-01-03

Applicant: Scott R. Summerfelt

Inventor： Scott R. Summerfelt

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/822 ,  H01L27/04 ,  H01L27/115 ,  H01L27/146 ,  H01L29/165 ,  H01L29/267 ,  H01L29/51 ,  H01L29/161

CPC classification number: H01L29/513 ,  H01L21/28158 ,  H01L27/11502 ,  H01L27/146 ,  H01L28/55 ,  H01L28/56 ,  H01L29/165 ,  H01L29/267 ,  H01L29/517 ,  Y10S117/913 ,  Y10S148/059

Abstract: This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a germanium layer 28 directly or indirectly on a semiconductor substrate 20; and depositing a high-dielectric constant oxide 32 (e.g. a ferroelectric oxide) on the germanium layer. Preferably, the germanium layer is epitaxially grown on the semiconductor substrate. This is also a semiconductor structure, comprising: a semiconductor substrate; a germanium layer on the semiconductor substrate; and a high-dielectric constant oxide on the germanium layer. Preferably the germanium layer is single-crystal. Preferably the substrate is silicon and the germanium layer is less than about 1 nm thick or the substrate is gallium arsenide (in which case the thickness of the germanium layer is not as important). A second germanium layer 40 may be grown on top of the high-dielectric constant oxide and a conducting layer 42 (possibly epitaxial) grown on the second germanium layer. Preferably the high-dielectric constant oxide is a titanate, such as barium strontium titanate. When the high-dielectric constant oxide is a lead-containing titanate 34, a buffer layer of non-lead-containing titanate 32 is preferably utilized between the germanium layer and the lead-containing titanate.

Abstract translation: 这是用于制造在半导体电路中有用的结构的方法。 该方法包括：在半导体衬底20上直接或间接生长锗层28; 以及在锗层上沉积高介电常数氧化物32（例如铁电氧化物）。 优选地，锗层在半导体衬底上外延生长。 这也是半导体结构，包括：半导体衬底; 半导体衬底上的锗层; 和锗层上的高介电常数氧化物。 锗层优选为单晶。 优选地，衬底是硅，并且锗层小于约1nm厚，或者衬底是砷化镓（在这种情况下，锗层的厚度不是那么重要）。 可以在高介电常数氧化物的顶部上生长第二锗层40和在第二锗层上生长的导电层42（可能的外延）。 优选地，高介电常数氧化物是钛酸钡，例如钛酸锶钡。 当高介电常数氧化物是含铅钛酸盐34时，优选在锗层和含铅钛酸盐之间使用非铅含钛酸盐32的缓冲层。

公开(公告)号：US5582641A

公开(公告)日：1996-12-10

申请号：US445555

申请日：1995-05-22

Applicant: Nobuhiko Sato

Inventor： Nobuhiko Sato

IPC: C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/60 ,  H01L21/205

CPC classification number: C30B29/06 ,  C30B25/18 ,  Y10S117/913

Abstract: A crystal article comprises a substrate and single crystals provided on said substrate, with the shape of the contacted surface of said single crystals with said substrate being n-gonal (provided that n.gtoreq.5) or circular.

Abstract translation: 晶体制品包括衬底和设置在所述衬底上的单晶，所述单晶的所述接触表面的形状与所述衬底是正交的（条件是n≥5）或圆形。

公开(公告)号：US5473171A

公开(公告)日：1995-12-05

申请号：US223085

申请日：1994-04-04

Applicant: Scott R. Summerfelt

Inventor： Scott R. Summerfelt

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/822 ,  H01L27/04 ,  H01L27/115 ,  H01L27/146 ,  H01L29/165 ,  H01L29/267 ,  H01L29/51 ,  H01L29/161

CPC classification number: H01L29/513 ,  H01L21/28158 ,  H01L27/11502 ,  H01L27/146 ,  H01L28/55 ,  H01L28/56 ,  H01L29/165 ,  H01L29/267 ,  H01L29/517 ,  Y10S117/913 ,  Y10S148/059

Abstract: This is a method for fabricating a structure useful in semiconductor circuitry. The method comprises: growing a germanium layer 28 directly or indirectly on a semiconductor substrate 20; and depositing a high-dielectric constant oxide 32 (e.g. a ferroelectric oxide) on the germanium layer. Preferably, the germanium layer is epitaxially grown on the semiconductor substrate. This is also a semiconductor structure, comprising: a semiconductor substrate; a germanium layer on the semiconductor substrate; and a high-dielectric constant oxide on the germanium layer. Preferably the germanium layer is single-crystal. Preferably the substrate is silicon and the germanium layer is less than about 1 nm thick or the substrate is gallium arsenide (in which case the thickness of the germanium layer is not as important). A second germanium layer 40 may be grown on top of the high-dielectric constant oxide and a conducting layer 42 (possibly epitaxial) grown on the second germanium layer. Preferably the high-dielectric constant oxide is a titanate, such as barium strontium titanate. When the high-dielectric constant oxide is a lead-containing titanate 34, a buffer layer of non-lead-containing titanate 32 is preferably utilized between the germanium layer and the lead-containing titanate.

Abstract translation: 这是用于制造在半导体电路中有用的结构的方法。 该方法包括：在半导体衬底20上直接或间接生长锗层28; 以及在锗层上沉积高介电常数氧化物32（例如铁电氧化物）。 优选地，锗层在半导体衬底上外延生长。 这也是半导体结构，包括：半导体衬底; 半导体衬底上的锗层; 和锗层上的高介电常数氧化物。 锗层优选为单晶。 优选地，衬底是硅，并且锗层小于约1nm厚，或者衬底是砷化镓（在这种情况下，锗层的厚度不是那么重要）。 可以在高介电常数氧化物的顶部上生长第二锗层40和在第二锗层上生长的导电层42（可能的外延）。 优选地，高介电常数氧化物是钛酸钡，例如钛酸锶钡。 当高介电常数氧化物是含铅钛酸盐34时，优选在锗层和含铅钛酸盐之间使用非铅含钛酸盐32的缓冲层。

公开(公告)号：US5447117A

公开(公告)日：1995-09-05

申请号：US327804

申请日：1994-10-24

Applicant: Takao Yonehara ,  Kenji Yamagata ,  Yuji Nishigaki

Inventor： Takao Yonehara ,  Kenji Yamagata ,  Yuji Nishigaki

IPC: C30B19/02 ,  C30B25/02 ,  C30B25/04 ,  C30B25/10 ,  C30B25/16 ,  C30B25/18 ,  C30B29/06 ,  C30B29/42 ,  C30B33/00 ,  H01L21/20 ,  C30B1/06

CPC classification number: H01L21/02425 ,  C30B25/02 ,  C30B25/16 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02647 ,  Y10S117/913

Abstract: A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 .mu.m.sup.2 or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.

Abstract translation: 晶体制品包括在基片上形成绝缘非晶面和单晶的基片。 单晶是通过在基板的表面上以具有小成核密度的非成核表面的方式提供面积为100μm2或更小的膜的主晶种形成的， 初级种子进行热处理以将其转化为单晶种子，随后使单晶种子经受晶体生长处理以允许单晶生长超过单晶种子并覆盖非成核表面。

公开(公告)号：US5427055A

公开(公告)日：1995-06-27

申请号：US9733

申请日：1993-01-27

Applicant: Takeshi Ichikawa

Inventor： Takeshi Ichikawa

IPC: C30B23/06 ,  C23C14/34 ,  C23C14/54 ,  C30B33/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/306 ,  H01L27/12 ,  C30B23/08

CPC classification number: H01L21/02381 ,  C23C14/54 ,  C30B29/06 ,  C30B33/00 ,  H01L21/0203 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02661 ,  Y10S117/913

Abstract: A method for controlling roughness on a surface of a monocrystal comprises supplying atomes for deposition on the surface of the monocrystal having the roughness under irradiation with ions having controlled energy to carry out epitaxial growth, thereby reducing the roughness.

Abstract translation: 用于控制单晶表面粗糙度的方法包括：在具有受控能量的离子照射下具有粗糙度的单晶表面上沉积原子以进行外延生长，从而降低粗糙度。