公开(公告)号：US07267863B2

公开(公告)日：2007-09-11

申请号：US10880818

申请日：2004-06-30

申请人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

发明人： Colin J. Brodsky ,  Wai-Kin Li ,  Steven A. Scheer

IPC分类号： B32B18/00 ,  B32B27/08 ,  B32B27/30

CPC分类号： B32B27/00 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/265 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

摘要： A film stack and method of forming a film stack are provided in which a first film is disposed on a substrate and a second film has an inner surface disposed on the first film. The second film has a thickness smaller than a reference thickness at which the second film would begin to dewet from the substrate if the second film were disposed directly on the substrate. However, the second film is substantially free of dewetting defects because it is disposed overlying the first film which has a first Hamaker constant having a negative value with respect to the substrate.

摘要翻译： 提供了一种薄膜叠层和形成薄膜叠层的方法，其中第一薄膜设置在基底上，第二薄膜具有设置在第一薄膜上的内表面。 如果第二膜直接设置在基板上，则第二膜的厚度小于第二膜从基板开始露出的基准厚度。 然而，第二膜基本上没有脱湿缺陷，因为它被布置在第一膜上，该第一膜具有相对于基底具有负值的第一Hamaker常数。

公开(公告)号：US20060110685A1

公开(公告)日：2006-05-25

申请号：US11329991

申请日：2006-01-10

申请人： Wai-kin Li ,  Rajeev Malik ,  Joseph Mezzapelle

发明人： Wai-kin Li ,  Rajeev Malik ,  Joseph Mezzapelle

IPC分类号： G03F7/00

CPC分类号： G03F7/091 ,  G03F7/11 ,  Y10S430/151

摘要： A process for prohibiting amino group transport from the top surface of a layered semiconductor wafer to a photoresist layer introduces a thin film oxynitride over the silicon nitride layer using a high temperature step of nitrous oxide (N2O) plus oxygen (O2) at approximately 300° C. for about 50 to 120 seconds. By oxidizing the silicon nitride layer, the roughness resulting from the adverse affects of amino group transport eliminated. Moreover, this high temperature step, non-plasma process can be used with the more advanced 193 nanometer technology, and is not limited to the 248 nanometer technology. A second method for exposing the silicon nitride layer to an oxidizing ambient, prior to the application of antireflective coating, introduces a mixture of N2H2 and oxygen (O2) ash at a temperature greater than or equal to 250° C. for approximately six minutes. This is followed by an O2 plasma clean and/or an Ozone clean, and then the subsequent layering of the ARC and photoresist.

摘要翻译： 用于禁止从层状半导体晶片的顶表面到光致抗蚀剂层的氨基转移的方法使用一氧化二氮（N 2 O 2 O）的高温步骤在氮化硅层上引入薄膜氧氮化物， 在约300℃下加氧气（O 2 H 2）约50至120秒。 通过氧化氮化硅层，消除了由氨基转移的不利影响产生的粗糙度。 此外，这种高温步骤，非等离子体工艺可以采用更先进的193纳米技术，并不限于248纳米技术。 在施加抗反射涂层之前，将氮化硅层暴露于氧化环境的第二种方法是引入N 2 H 2 O 2和氧的混合物（O _{2℃）灰分，温度大于或等于250℃约6分钟。 之后是等离子体清洁和/或臭氧清洁，然后再分层ARC和光致抗蚀剂。}

公开(公告)号：US06960532B2

公开(公告)日：2005-11-01

申请号：US10248911

申请日：2003-02-28

申请人： Linda A. Chen ,  Wai-Kin Li

发明人： Linda A. Chen ,  Wai-Kin Li

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/308 ,  H01L21/8242 ,  H01L21/302

CPC分类号： H01L21/0273 ,  G03F7/2022 ,  G03F7/2028 ,  H01L21/3083 ,  H01L27/10844

摘要： Damage to the rim of a semiconductor wafer caused by etching processes is reduced by forming a rim of carbonized photoresist around the outer edge of the wafer, using a wafer edge tool to carbonize the outer rim of a positive tone photoresist.

摘要翻译： 通过使用晶片边缘工具在正色调光致抗蚀剂的外缘碳化来形成碳化光致抗蚀剂周缘在晶片的外边缘上，从而减少了由蚀刻工艺引起的半导体晶片的边缘的损伤。

公开(公告)号：US06955489B2

公开(公告)日：2005-10-18

申请号：US10446228

申请日：2003-05-27

申请人： Jee Loon Look ,  Paul Joseph Cooper ,  Khawla Abdullah Abu-Izza ,  Joyce H. Wilson ,  Krishna P. Raman ,  Vincent Hon-Kin Li

发明人： Jee Loon Look ,  Paul Joseph Cooper ,  Khawla Abdullah Abu-Izza ,  Joyce H. Wilson ,  Krishna P. Raman ,  Vincent Hon-Kin Li

IPC分类号： A45D40/04 ,  A45D40/16 ,  A45D40/24 ,  A61K8/02 ,  A61K8/31 ,  A61K8/35 ,  A61K8/37 ,  A61K8/44 ,  A61K8/55 ,  A61K8/92 ,  A61Q1/06 ,  A61Q15/00 ,  A61Q17/04 ,  A61Q19/00 ,  B29C39/02 ,  B29C39/10 ,  B29C39/24 ,  B65D83/00 ,  B65B1/04

CPC分类号： A61K8/02 ,  A45D40/04 ,  A45D40/16 ,  A45D40/24 ,  A45D2040/0012 ,  A61K8/0229 ,  A61K8/31 ,  A61K8/35 ,  A61K8/37 ,  A61K8/44 ,  A61K8/553 ,  A61K8/92 ,  A61K8/922 ,  A61K8/927 ,  A61K2800/88 ,  A61Q1/06 ,  A61Q15/00 ,  A61Q17/04 ,  A61Q19/00 ,  B29C39/023 ,  B29C39/10 ,  B29C39/24 ,  B65B2220/14 ,  B65D83/00

摘要： A multi-composition stick product, such as a lip balm, sun screen, deodorant, or glue stick. The multi-composition stick product including a stick composition molded in the container so as to contact the walls thereof and be advanceable or ejected therefrom. The stick composition includes a first composition and a second composition. The first and second compositions differ in at least one component, such as a medicament, colorant, fragrance, flavorant, sunscreen, preservative, conditioner, moisturizer, emollient, or surfactant. Furthermore the first and second compositions are arranged in a predetermined non-random pattern that is reproducible. Also described is the method and apparatus for manufacturing the multi-composition stick product.

摘要翻译： 多组合棒产品，如唇膏，防晒霜，除臭剂或胶棒。 该多组合棒产品包括在该容器中成型以便与其壁接触并可前进或从其中弹出的棒状组合物。 棒组合物包括第一组合物和第二组合物。 第一和第二组合物在至少一种组分如药物，着色剂，香料，调味剂，防晒剂，防腐剂，调理剂，保湿剂，软化剂或表面活性剂中不同。 此外，第一和第二组合物以可再现的预定非随机图案排列。 还描述了用于制造多组合棒产品的方法和装置。

公开(公告)号：US06949459B2

公开(公告)日：2005-09-27

申请号：US10704022

申请日：2003-11-07

申请人： Wai-Kin Li ,  Chih-Chao Yang ,  Yi-hsiung Lin

发明人： Wai-Kin Li ,  Chih-Chao Yang ,  Yi-hsiung Lin

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76831

摘要： Disclosed is a method that deposits an aqueous material having a pH between approximately 10 and 11 in a first opening and on an oxide hard mask, deposits an organic material on the aqueous material, and patterns a photoresist over the organic material. The invention then etches the organic material and the aqueous material through the photoresist to form a second opening above the first opening and forms a polymer along sidewalls of the second opening. The invention can then perform a wet cleaning process using an alkali solution having a pH between approximately 10 and 11 to remove the aqueous material from the first opening. By utilizing an alkali aqueous (water-based) material having a pH of approximately 10-11, the invention can use a fairly low pH wet etch (pH of approximately 10-11) to completely remove the aqueous solution from the via, thereby eliminating the conventional problem of having residual organic material left within the via.

公开(公告)号：US06502588B2

公开(公告)日：2003-01-07

申请号：US09732424

申请日：2000-12-07

申请人： Kin Li ,  Minas Tanielian

发明人： Kin Li ,  Minas Tanielian

IPC分类号： C25F100

CPC分类号： C03C23/006 ,  C03C23/0065 ,  C03C25/6293 ,  H05K3/288

摘要： A method for producing stable atmospheric pressure glow discharge plasmas using RF excitation and the use of said plasmas for modifying the surface layer of materials. The plasma generated by this process and its surface modification capability depend on the type of gases used and their chemical reactivity. These plasmas can be used for a variety of applications, including etching of organic material from the surface layer of inorganic substrates, as an environmentally benign alternative to industrial cleaning operations which currently employ solvents and degreasers, as a method of stripping paint from surfaces, for the surface modification of composites prior to adhesive bonding operations, for use as a localized etcher of electronic boards and assemblies and in microelectronic fabrication, and for the sterilization of tools used in medical applications.

公开(公告)号：US08722307B2

公开(公告)日：2014-05-13

申请号：US13118013

申请日：2011-05-27

申请人： Seiichiro Tachibana ,  Kazumi Noda ,  Masaki Ohashi ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

发明人： Seiichiro Tachibana ,  Kazumi Noda ,  Masaki Ohashi ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

IPC分类号： G03F7/004 ,  G03F7/11

CPC分类号： G03F7/038 ,  G03F7/0046 ,  G03F7/091

摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.

摘要翻译： 包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化 基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。

公开(公告)号：US20140035142A1

公开(公告)日：2014-02-06

申请号：US13562953

申请日：2012-07-31

申请人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

发明人： Chih-Chao Yang ,  Shyng-Tsong Chen ,  Samuel S. Choi ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Wai-Kin Li ,  Christopher J. Penny ,  Shom Ponoth ,  Yunpeng Yin

IPC分类号： H01L23/48 ,  H01L21/28

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76831 ,  H01L21/76844 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

摘要： The profile of a via can be controlled by forming a profile control liner within each via opening that is formed into a dielectric material prior to forming a line opening within the dielectric material. The presence of the profile control liner within each via opening during the formation of the line opening prevents rounding of the corners of a dielectric material portion that is present beneath the line opening and adjacent the via opening.

摘要翻译： 可以通过在形成介电材料之前形成电介质材料的每个通孔开口内形成轮廓控制衬垫来控制通孔的轮廓，然后在电介质材料内形成线路开口。 在形成线路开口期间在每个通孔开口内存在轮廓控制衬垫防止存在于线路开口下方并且邻近通孔开口的电介质材料部分的拐角的四舍五入。

公开(公告)号：US08609327B2

公开(公告)日：2013-12-17

申请号：US12170722

申请日：2008-07-10

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/2024

摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.

摘要翻译： 提出了使用双重曝光形成亚光刻图案的方法。 一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。

公开(公告)号：US08492079B2

公开(公告)日：2013-07-23

申请号：US12430919

申请日：2009-04-28

申请人： Chia-Chen Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Chandrasekhar Sarma

发明人： Chia-Chen Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Chandrasekhar Sarma

IPC分类号： G03F7/20

CPC分类号： G03F7/70466 ,  G03F1/70 ,  G03F7/095 ,  G03F7/203 ,  Y10T428/24802

摘要： A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.

摘要翻译： 在基板上形成具有第二光敏性的第二光致抗蚀剂。 在第二光致抗蚀剂上形成具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 优选地，第一光致抗蚀剂是在曝光时变得透明的灰色抗蚀剂。 使用具有第一图案的第一掩模版将第一光致抗蚀剂的至少一部分光刻曝光以形成至少一个透明的光刻曝光的抗蚀剂部分，而第二光致抗蚀剂保持完整。 使用包括第二图案的第二掩模版将第二光致抗蚀剂光刻曝光，以在第二光致抗蚀剂中形成多个光刻曝光的形状。 多个光刻曝光的形状具有通过仅在至少一个透明光刻曝光的抗蚀剂图案的区域内限制第二图案而从第二图案导出的复合图案。