ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURE
    71.
    发明申请
    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURE 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号:US20090072228A1

    公开(公告)日:2009-03-19

    申请号:US12191849

    申请日:2008-08-14

    IPC分类号: H01L51/05 H01L51/40

    摘要: An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode.

    摘要翻译: 有机薄膜晶体管基板包括形成在基板上的栅极电极,形成在栅电极上的栅极绝缘层,具有源极连接部分和漏极放置槽,源极连接部分中形成的源电极, 形成在漏极放置槽中的漏极电极和与栅极绝缘层,源极电极和漏极电极接触的有机半导体层。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    72.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20080078993A1

    公开(公告)日:2008-04-03

    申请号:US11864581

    申请日:2007-09-28

    IPC分类号: H01L51/10 H01L51/40

    摘要: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

    摘要翻译: 一种薄膜晶体管阵列板的制造方法,包括形成栅电极,在栅电极上形成绝缘层,在绝缘层上依次形成下导电层和上导电层,蚀刻上导电层以形成第一 源电极和第一漏电极,蚀刻下导电层以形成第二源电极和第二漏电极,过蚀刻第二源电极和第二漏电极,以及在第二源电极和第二漏电极之间形成有机半导体 第二漏电极。

    Method of manufacturing a thin film transistor array panel
    74.
    发明授权
    Method of manufacturing a thin film transistor array panel 有权
    制造薄膜晶体管阵列面板的方法

    公开(公告)号:US07335524B2

    公开(公告)日:2008-02-26

    申请号:US11369534

    申请日:2006-03-07

    申请人: Tae-Young Choi

    发明人: Tae-Young Choi

    IPC分类号: H01L21/00

    摘要: A method for manufacturing a flexible display, includes forming a gate line including a plurality of gate electrodes with a first interval on a substrate having a coefficient of thermal expansion, sequentially depositing both a gate insulating layer covering the gate line and a semiconductor layer, etching the semiconductor layer by using a mask having a plurality of semiconductor patterns with a second interval different from the first interval to form a semiconductor, forming both a data line including a source electrode and a drain electrode on the semiconductor and the gate insulating layer, and forming a pixel electrode coupled with the drain electrode.

    摘要翻译: 一种制造柔性显示器的方法,包括在具有热膨胀系数的基板上形成具有第一间隔的多个栅电极的栅极线,顺序地沉积覆盖栅极线的栅极绝缘层和半导体层,蚀刻 通过使用具有不同于第一间隔的第二间隔的多个半导体图案的掩模以形成半导体的半导体层,在半导体和栅极绝缘层上形成包括源电极和漏电极的数据线,以及 形成与漏电极耦合的像素电极。

    Thin film transistor array panel and method of manufacturing the same
    75.
    发明申请
    Thin film transistor array panel and method of manufacturing the same 审中-公开
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US20080035919A1

    公开(公告)日:2008-02-14

    申请号:US11891587

    申请日:2007-08-09

    IPC分类号: H01L51/10 H01L51/48

    摘要: Disclosed is a thin film transistor array panel including a substrate, a data line formed on the substrate, a gate line that intersects the data line and includes a gate electrode, a source electrode connected to the data line, and a drain electrode facing the source electrode. An organic semiconductor contacts the source electrode and the drain electrode via an insulating layer having an opening that defines the location of the organic semiconductor. The insulating layer includes an acrylic photosensitive resin having a fluorine-containing compound. A method of manufacturing the above-described thin film transistor array panel is disclosed.

    摘要翻译: 公开了一种薄膜晶体管阵列面板,其包括基板,形成在基板上的数据线,与数据线相交并包括栅电极的栅极线,连接到数据线的源电极和面对源极的漏电极 电极。 有机半导体通过具有限定有机半导体的位置的开口的绝缘层与源电极和漏电极接触。 绝缘层包括具有含氟化合物的丙烯酸类感光性树脂。 公开了一种制造上述薄膜晶体管阵列面板的方法。

    FABRICATION METHOD FOR AN ORGANIC THIN FILM TRANSISTOR SUBSTRATE
    76.
    发明申请
    FABRICATION METHOD FOR AN ORGANIC THIN FILM TRANSISTOR SUBSTRATE 有权
    有机薄膜晶体管基板的制造方法

    公开(公告)号:US20080017851A1

    公开(公告)日:2008-01-24

    申请号:US11781109

    申请日:2007-07-20

    IPC分类号: H01L51/10 H01L51/40

    摘要: An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

    摘要翻译: 公开了一种简化制造工艺的有机薄膜晶体管(TFT)衬底。 TFT基板包括栅极线和数据线以及连接到栅极线和数据线的有机TFT。 栅极线和数据线限定形成像素电极的像素区域。 第一接触部将数据线连接到有机TFT,第二接触部将像素电极连接到有机TFT。 钝化层覆盖有机TFT。 有机TFT基板还包括具有用于将第一接触部分连接到有机TFT的第一接触孔的第一接触孔,用于将第二接触部分连接到有机TFT的第二接触孔,限定位置的第一子组 栅绝缘层和限定钝化层的位置的第二子库。

    Display device and manufacturing method therefor
    77.
    发明申请
    Display device and manufacturing method therefor 有权
    显示装置及其制造方法

    公开(公告)号:US20070170431A1

    公开(公告)日:2007-07-26

    申请号:US11698439

    申请日:2007-01-26

    IPC分类号: H01L29/76

    摘要: A display device, comprising an insulating substrate; a data conductor formed on the insulating substrate and comprising a conductive film; a thin film transistor having at least one source electrode electrically connected with the conductive film, and a drain electrode formed along a circumference of the source electrode and spaced therefrom; and a pixel electrode which is electrically connected with the conductive film.

    摘要翻译: 一种显示装置,包括绝缘基板; 形成在所述绝缘基板上并且包括导电膜的数据导体; 具有与所述导电膜电连接的至少一个源电极的薄膜晶体管,以及沿着所述源极电极的周围形成并与之隔开的漏电极; 以及与导电膜电连接的像素电极。

    Thin film transistor substrate and manufacturing method thereof
    78.
    发明申请
    Thin film transistor substrate and manufacturing method thereof 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US20070018162A1

    公开(公告)日:2007-01-25

    申请号:US11491013

    申请日:2006-07-21

    IPC分类号: H01L29/04

    CPC分类号: H01L51/0533 H01L51/0545

    摘要: Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area. Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

    摘要翻译: 本发明的实施例提供一种薄膜晶体管衬底,包括:绝缘衬底; 形成在所述绝缘基板上的栅极线; 由无机材料制成的第一栅极绝缘层,形成在栅极线上并具有用于暴露栅极线的至少一部分的第一绝缘层接触孔; 形成在所述第一栅极绝缘膜上并且具有与所述第一绝缘层接触孔对应的第二绝缘层接触孔的由有机材料制成的第二栅极绝缘层; 源电极和漏电极,形成在第二栅极绝缘层上并且彼此分开以限定沟道区; 以及形成在沟道区上的有机半导体层。 因此,本发明提供了TFT的特性提高的有机TFT基板。