摘要:
An organic light emitting diode display comprises: a substrate; an active layer formed with a semiconductor material on the substrate; a first insulation layer formed on the semiconductor layer; a pixel electrode formed on the first insulation layer and generated by alternately stacking a plurality of pixel metal layers and a plurality of pixel transparent conductive layers; a gate electrode formed on the first insulation layer and formed in a configuration different from that of the pixel electrode; a second insulation layer formed on the first insulation layer so as to cover the gate electrode with an insulation layer opening for revealing the pixel electrode; a source electrode and a drain electrode respectively formed on the second insulation layer and electrically connected to the active layer; an organic emission layer formed on the pixel electrode; and a common electrode formed on the organic emission layer.
摘要:
Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin-film transistor (TFT), which includes an active layer, a gate electrode, and source/drain electrodes; an organic electroluminescent device electrically connected to the TFT and includes a pixel electrode formed on the same layer as the gate electrode, an intermediate layer including an organic light emitting layer, and a counter electrode that are stacked in the order stated; and a capacitor, which includes a bottom electrode, which is formed on the same layer and of the same material as the active layer and is doped with an impurity; a top electrode formed on the same layer as the gate electrode; and a metal diffusion medium layer formed on the same layer as the source/drain electrodes and is connected to the bottom electrode.
摘要:
An integrated circuit memory device includes a refresh control circuit that generates an internal memory refresh command signal having a period that is changed relative to a period of an external memory refresh command signal received by the memory device. This change in the period of the internal memory refresh command may be in response to detecting a change in temperature of the memory device. In particular, the refresh control circuit is configured so that the period of the internal memory refresh command signal is increased in response to detecting a reduction in temperature of the memory device.
摘要:
An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.
摘要:
A semiconductor memory device includes a memory cell array including a first memory cell coupled to a first bit line and a word line, and a second memory cell coupled to a second bit line and the word line and disposed adjacent to the first memory cell. A controller circuit is configured to provide first and second precharge voltages to the first and second bitlines, respectively. The first precharge voltage is provided as a positive power supply voltage and the second precharge voltage is provided as a negative stress voltage during a burn-in test operation. Related methods of operation are also discussed.
摘要:
A thin-film transistor array substrate is disclosed. In one embodiment, the substrate includes: i) a thin-film transistor including an active layer, and gate, source and drain electrodes, ii) a lower electrode of a capacitor, iii) an upper electrode of the capacitor formed on the lower electrode iv) a first insulation layer between the lower and upper electrodes, and between the active layer and the gate electrode, and having a gap outside the lower electrode. The substrate may further include i) a second insulation layer formed on the first insulation layer and having the same etching surface as the first insulation layer in the gap, ii) a bridge formed of the same material as the source and drain electrodes, and filling a part of the gap and iii) a third insulation layer covering the source and drain electrodes and exposing a pixel electrode.
摘要:
An organic light-emitting display apparatus includes a thin film transistor on a display region of a substrate, the thin film transistor faces an encapsulation member, an organic light-emitting device on the display region that includes an intermediate layer having an organic emission layer, a sealing member that is between the substrate and the encapsulation member and that surrounds the display region, an internal circuit unit between the display region and the sealing member, a passivation layer that extends to cover the internal circuit unit, a pixel defining layer on the passivation layer, and a getter between the substrate and the encapsulation member, and the getter at least partially overlaps the internal circuit unit.
摘要:
An organic light-emitting display device includes a capacitor lower electrode that includes a semiconductor material doped with ion impurities. A first insulating layer covers an active layer and the capacitor lower electrode. A gate electrode includes a gate lower electrode formed of a transparent conductive material and a gate upper electrode formed of metal. A pixel electrode is electrically connected to the thin film transistor. A capacitor upper electrode is at the same level as the pixel electrode. An etch block layer is formed between the first insulating layer and the capacitor upper electrode. Source and drain electrodes are electrically connected to the active layer. A second insulating layer has an opening completely exposing the capacitor upper electrode. A third insulating layer exposes the pixel electrode. An intermediate layer includes an emissive layer. An opposite electrode faces the pixel electrode.
摘要:
An organic light-emitting display apparatus includes a substrate, a thin-film transistor (TFT) on the substrate, the TFT including an active layer, a gate electrode, a source electrode, and a drain electrode, a first insulating film between the gate electrode and the source electrode and between the gate electrode and the drain electrode, a second insulating film between the first insulating film and the source electrode and between the first insulating film and the drain electrode, the second insulating film including an opening, a first electrode between the first insulating film and the second insulating film, the first electrode including a region corresponding to the opening of the second insulating film, an intermediate layer including an organic light-emitting layer, and a second electrode on the intermediate layer.
摘要:
An organic light emitting diode display device (OLED display device) having uniform electrical characteristics and a method of manufacturing the same. The OLED display device includes: a substrate; a semiconductor layer disposed on the substrate, and including source and drain regions and a channel region formed using metal induced lateral crystallization (MILC); a gate insulating layer for electrically insulating the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer for electrically insulating the gate electrode; a thin film transistor (TFT) including source and drain electrodes that are electrically connected to the source and drain regions of the semiconductor layer; a first electrode for a capacitor disposed on a region of the substrate to be spaced apart from the TFT and formed using a metal induced crystallization (MIC); the gate insulating layer for electrically insulating the first capacitor electrode; a second electrode for the capacitor disposed on the gate insulating layer; a planarization layer disposed on the TFT and the capacitor; a first electrode disposed on the planarization layer; a pixel defining layer disposed on the first electrode; an organic layer disposed on the first electrode and the pixel defining layer, and including at least an emission layer; and a second electrode disposed on the organic layer.