公开(公告)号：US08933473B1

公开(公告)日：2015-01-13

申请号：US13487088

申请日：2012-06-01

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： H01L29/22

CPC分类号： H01L25/167 ,  H01L21/486 ,  H01L21/67161 ,  H01L21/67236 ,  H01L21/67703 ,  H01L21/78 ,  H01L25/165 ,  H01L33/40 ,  H01L33/486 ,  H01L33/52 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  Y10T29/53174 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： Light emitting diode (LED) package structures employing large area substrates are described. Panel or reel-to-reel substrate processing is utilized in the manufacture of such LED package structures. In some embodiments, electrochemically deposited metal patterns and through substrate vias (TSuVs) are formed through glass substrates and/or interposers. In some embodiments, the metal deposited into the TSuVs offer high thermal conductivity a low coefficient of thermal expansion (CTE) that is to closely match the CTE of the glass. Singulated LED package structures including a plurality of LEDs arrayed for displays, such as, but not limited to, liquid crystal displays (LCDs) and LED displays or for general purpose LED light sources are described, as are LED package structures including active devices (e.g., ICs) and/or passive devices (e.g., capacitors, inductors, resistors, etc.) integrated with LEDs at the package level.

摘要翻译： 描述了采用大面积衬底的发光二极管（LED）封装结构。 面板或卷对盘基板处理用于制造这种LED封装结构。 在一些实施例中，电化学沉积的金属图案和通过衬底通孔（TSuV）通过玻璃衬底和/或插入件形成。 在一些实施例中，沉积到TSuV中的金属提供高导热率，其与玻璃的CTE密切匹配的低热膨胀系数（CTE）。 描述了包括阵列用于显示器（例如但不限于液晶显示器（LCD））和LED显示器或用于通用LED光源的多个LED的单个LED封装结构，包括有源器件（例如， ，IC）和/或与封装级别的LED集成的无源器件（例如，电容器，电感器，电阻器等）。

公开(公告)号：US20080044999A1

公开(公告)日：2008-02-21

申请号：US11893870

申请日：2007-08-15

申请人： Valery Dubin ,  Peter Moon

发明人： Valery Dubin ,  Peter Moon

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/7682 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76879 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, an apparatus comprises a first layer having at least one interconnect formed in an interlayer dielectric (ILD), a second layer formed over the first layer having a second at least one interconnect, a third layer formed over the second layer, the third layer defining at least one air gap between the second at least one interconnect and the third layer, and at least one shunt selectively covering the first and second at least one interconnects. In another embodiment, a method comprises forming a first layer comprising an ILD and a first at least one interconnect, forming a second layer over the first layer, the second layer having a second at least one interconnect, depositing at least one shunt over the first and second at least one interconnects, forming a third layer over the second layer, and evaporating a portion of the second layer to create at least one air gap between the second at least one interconnect and the third layer.

摘要翻译： 在一个实施例中，一种装置包括具有在层间电介质（ILD）中形成的至少一个互连的第一层，在第一层上形成的具有第二至少一个互连的第二层，在第二层上形成的第三层， 第三层限定第二至少一个互连和第三层之间的至少一个空气间隙，以及至少一个分流器，其选择性地覆盖第一和第二至少一个互连。 在另一个实施例中，一种方法包括形成包括ILD和第一至少一个互连的第一层，在第一层上形成第二层，第二层具有第二至少一个互连，在第一层上沉积至少一个分流 以及第二至少一个互连，在所述第二层上形成第三层，以及蒸发所述第二层的一部分以在所述第二至少一个互连和所述第三层之间产生至少一个空气间隙。

公开(公告)号：US20070102809A1

公开(公告)日：2007-05-10

申请号：US11360096

申请日：2006-02-22

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： H01L23/34

CPC分类号： H01L24/31 ,  B01J23/74 ,  B01J37/0217 ,  B01J37/0226 ,  B01J37/348 ,  B82Y30/00 ,  H01L21/4871 ,  H01L23/373 ,  H01L23/433 ,  H01L24/28 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15312 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/0401

摘要： Embodiments of a composite carbon nanotube structure comprising a number of carbon nanotubes disposed in a matrix comprised of a metal or a metal oxide. The composite carbon nanotube structures may be used as a thermal interface device in a packaged integrated circuit device.

摘要翻译： 复合碳纳米管结构的实施例包括设置在由金属或金属氧化物构成的基体中的多个碳纳米管。 复合碳纳米管结构可以用作封装集成电路器件中的热界面器件。

公开(公告)号：US20060208362A1

公开(公告)日：2006-09-21

申请号：US11082000

申请日：2005-03-15

申请人： Valery Dubin

发明人： Valery Dubin

IPC分类号： H01L23/48

CPC分类号： H01L21/76879 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/34 ,  C01B2202/36 ,  H01L21/288 ,  H01L21/76849 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

摘要： Some embodiments of the present invention include fabricating carbon nanotube bundles with controlled length, diameter, and metallic contacts.

摘要翻译： 本发明的一些实施方案包括制造具有受控长度，直径和金属触点的碳纳米管束。

公开(公告)号：US20050277281A1

公开(公告)日：2005-12-15

申请号：US10864957

申请日：2004-06-10

申请人： Valery Dubin ,  Richard Emery ,  Ming Fang

发明人： Valery Dubin ,  Richard Emery ,  Ming Fang

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L23/48 ,  H01L23/49

CPC分类号： B81C1/00301 ,  B81B2207/097 ,  H01L24/11 ,  H01L24/72 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/13008 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for making a compliant interconnect with two or more layers of metal is described herein.

摘要翻译： 本文描述了用于制造具有两层或多层金属的柔性互连的方法。

公开(公告)号：US20050274619A1

公开(公告)日：2005-12-15

申请号：US11207305

申请日：2005-08-19

申请人： Daniel Zierath ,  Vinay Chikarmane ,  Valery Dubin

发明人： Daniel Zierath ,  Vinay Chikarmane ,  Valery Dubin

IPC分类号： C25D21/12 ,  C25D3/00 ,  C25D5/00

CPC分类号： C25D21/12

摘要： An embodiment of the invention provides a method for reducing within die thickness variations by modifying the concentration of components of a low-acid electroplating solution. For one embodiment, the leveler concentration is increased sufficiently to reduce within die thickness variations to a specified value. For one embodiment of the invention, the leveler and suppressor are increased to reduce within die thickness variations and substantially reduce a plurality of electroplating defects. In such an embodiment the combined concentration of leveler and suppressor is determined to maintain adequate gap fill.

公开(公告)号：US20050266265A1

公开(公告)日：2005-12-01

申请号：US11192501

申请日：2005-07-29

申请人： Chin-Chang Cheng ,  Valery Dubin

发明人： Chin-Chang Cheng ,  Valery Dubin

IPC分类号： B32B15/00 ,  B32B15/04 ,  C23C18/16 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  H05K3/24

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76838 ,  H01L21/76849 ,  H05K3/244 ,  H05K2203/072 ,  H05K2203/1476 ,  Y10T428/12576 ,  Y10T428/12861

摘要： A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.

公开(公告)号：US20050260339A1

公开(公告)日：2005-11-24

申请号：US11192761

申请日：2005-07-29

申请人： Chin-Chang Cheng ,  Valery Dubin

发明人： Chin-Chang Cheng ,  Valery Dubin

IPC分类号： B32B15/00 ,  B32B15/04 ,  C23C18/16 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/44 ,  H01L21/768 ,  H05K3/24

CPC分类号： H01L21/76846 ,  C23C18/1651 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76838 ,  H01L21/76849 ,  H05K3/244 ,  H05K2203/072 ,  H05K2203/1476 ,  Y10T428/12576 ,  Y10T428/12861

摘要： A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.

摘要翻译： 提出了一种无电沉积金属层的多级方法。 该方法可以具有以下两个主要阶段：首先使用含有作为高反应性还原剂的活化剂的化学镀溶液在金属表面上形成薄金属层，其次，在金属薄层上通过使用 含有轻度反应性还原剂的化学镀溶液。 通过这种两阶段方法，可以使可能引起污染物颗粒形成的高反应性还原剂的使用最小化。 通过最小化化学镀溶液中的污染物颗粒的形成，可以延长溶液的寿命，并且可以减少金属互连线之间的电流泄漏。

公开(公告)号：US20050224778A1

公开(公告)日：2005-10-13

申请号：US10819790

申请日：2004-04-07

申请人： Valery Dubin ,  Swaminathan Sivakumar ,  Andrew Berlin ,  Mark Bohr

发明人： Valery Dubin ,  Swaminathan Sivakumar ,  Andrew Berlin ,  Mark Bohr

IPC分类号： H01L21/768 ,  H01L29/788 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/76852 ,  H01L51/0021 ,  H01L51/0048 ,  H01L51/0052 ,  H01L2221/1094 ,  Y10S977/742 ,  Y10S977/936

摘要： A nano-electrode or nano-wire may be etched centrally to form a gap between nano-electrode portions. The portions may ultimately constitute a single electron transistor. The source and drain formed from the electrode portions are self-aligned with one another. Using spacer technology, the gap between the electrodes may be made very small.

摘要翻译： 可以将纳米电极或纳米线中心蚀刻以形成纳米电极部分之间的间隙。 这些部分可以最终构成单个电子晶体管。 由电极部分形成的源极和漏极彼此自对准。 使用间隔技术，可以使电极之间的间隙非常小。

公开(公告)号：US20050161828A1

公开(公告)日：2005-07-28

申请号：US11077252

申请日：2005-03-09

申请人： Valery Dubin ,  Ramanan Chebiam

发明人： Valery Dubin ,  Ramanan Chebiam

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for a semiconductor device having a semiconductor device having increased conductive material reliability is described. That method and apparatus comprises forming a conductive path on a substrate. The conductive path made of a first material. A second material is then deposited on the conductive path. Once the second material is deposited on the conductive path, the diffusion of the second material into the conductive path is facilitated. The second material has a predetermined solubility to substantially diffuse to grain boundaries within the first material.