公开(公告)号：US07394624B2

公开(公告)日：2008-07-01

申请号：US11065225

申请日：2005-02-23

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

摘要： A read sensor with a uniform longitudinal bias (LB) stack is proposed. The read sensor is a giant magnetoresistance (GMR) sensor used in a current-in-plane (CIP) or a current-perpendicular-to-plane (CPP) mode, or a tunneling magnetoresistance (TMR) sensor used in the CPP mode. The transverse pinning layer of the read sensor is made of an antiferromagnetic Pt—Mn, Ir—Mn or Ir—Mn—Cr film. In one embodiment of this invention, the uniform LB stack comprises a longitudinal pinning layer, preferable made of an antiferromagnetic Ir—Mn—Cr or Ir—Mn film, in direct contact with and exchange-coupled to sense layers of the read sensor. In another embodiment of the present invention, the uniform LB stack comprises the Ir—Mn—Cr or Ir—Mn longitudinal pinning layer exchange coupled to a ferromagnetic longitudinal pinned layer, and a nonmagnetic antiparallel-coupling spacer layer sandwiched between and the ferromagnetic longitudinal pinned layer and the sense layers.

摘要翻译： 提出了具有均匀纵向偏置（LB）堆叠的读取传感器。 读取传感器是在电流平面（CIP）或电流 - 垂直于平面（CPP）模式中使用的巨磁阻（GMR）传感器，或CPP模式中使用的隧道磁阻（TMR）传感器。 读取传感器的横向钉扎层由反铁磁性Pt-Mn，Ir-Mn或Ir-Mn-Cr膜制成。 在本发明的一个实施例中，均匀的LB堆叠包括纵向钉扎层，优选由反铁磁性Ir-Mn-Cr或Ir-Mn膜制成，与读取传感器的感测层直接接触并交换耦合。 在本发明的另一个实施例中，均匀LB叠层包括耦合到铁磁纵向被钉扎层的Ir-Mn-Cr或Ir-Mn纵向钉扎层交换，以及夹在其间的非磁性反向平行耦合间隔层和铁磁纵向钉扎层 层和感应层。

公开(公告)号：US07367109B2

公开(公告)日：2008-05-06

申请号：US11048259

申请日：2005-01-31

申请人： Jinshan Li ,  Tsann Lin

发明人： Jinshan Li ,  Tsann Lin

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3166 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/0016 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test structures are deposited on a substrate such as glass. The test structures include the seed layers, pinning layers and pinned layers and have varying thicknesses of the first pinned layer. The compositions of the materials and the thicknesses of all of the other films remain constant. The net areal magnetic moment of each test structure is measured and plotted versus the thickness of the first pinned layer. The thickness of the first pinned layer which corresponds most closely to zero net areal magnetic moment is chosen as the design point for the sensor.

摘要翻译： 描述了用于在GMR传感器（例如Co-Fe / Ru / Co-Fe）中实现钉扎层的几乎零净磁矩的方法。 该方法确定第一被钉扎层的厚度，其将产生用于钉扎层的期望的净磁矩。 一系列测试结构沉积在诸如玻璃的基底上。 测试结构包括种子层，钉扎层和钉扎层，并且具有变化的第一钉扎层的厚度。 材料的组成和所有其它膜的厚度保持恒定。 测量每个测试结构的净面积磁矩并绘制相对于第一固定层的厚度。 选择最接近零网面磁矩的第一钉扎层的厚度作为传感器的设计点。

公开(公告)号：US07244169B2

公开(公告)日：2007-07-17

申请号：US10954868

申请日：2004-09-30

申请人： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott Arthur MacDonald ,  Huey-Ming Tzeng

发明人： Marie-Claire Cyrille ,  Kuok San Ho ,  Tsann Lin ,  Scott Arthur MacDonald ,  Huey-Ming Tzeng

IPC分类号： B24B49/00 ,  B24B51/00 ,  G11B5/42

CPC分类号： B24B37/00 ,  B24B37/013 ,  B24B41/06 ,  B24B49/10 ,  Y10T29/49036 ,  Y10T29/49048

摘要： An in-line lapping guide uses a contiguous resistor in a cavity to separate a lithographically-defined sensor from the in-line lapping guide. As lapping proceeds through the cavity toward the sensor, the resistance across the sensor leads increases to a specific target, thereby indicating proximity to the sensor itself. The contiguous resistor is fabricated electrically in parallel to the sensor and the in-line lapping guide. The total resistance across the sensor leads show resistance change even when lapping through the cavity portion. One method to produce the contiguous resistor is to partial mill the cavity between the sensor and the in-line lapping guide so that a film of metal is left. Total resistance across leads is the parallel resistance of the sensor, the contiguous resistor, and the in-line lapping guide.

摘要翻译： 在线研磨引导件使用空腔中的连续电阻器将光刻定影传感器与在线研磨导轨分离。 当研磨通过腔朝向传感器进行时，传感器引线上的电阻增加到特定目标，从而指示传感器本身的接近度。 连续的电阻器与传感器和在线研磨导轨平行地制造。 传感器引线上的总电阻即使在通过空腔部分研磨时也会显示电阻变化。 产生连续电阻器的一种方法是将传感器和在线研磨引导件之间的空腔部分研磨，使得留下金属膜。 引线之间的总电阻是传感器，相邻电阻器和在线研磨导轨的并联电阻。

公开(公告)号：US07161771B2

公开(公告)日：2007-01-09

申请号：US10115825

申请日：2002-04-02

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3935 ,  G11B5/3954 ,  G11B5/3967 ,  G11B2005/0008

摘要： A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.

摘要翻译： 双自旋阀（SV）传感器设置有夹在第一SV堆叠和第二SV堆叠之间的纵向偏置堆叠。 纵向偏置堆叠包括夹在第一和第二铁磁层之间的反铁磁（AFM）层。 第一和第二SV堆叠包括由具有比偏置堆叠的AFM材料更高的阻挡温度的AFM材料制成的AFM层钉住的反平行（AP） - 镀层，其允许AP钉扎层在横向上被钉扎， 偏置堆叠沿纵向方向固定。 两个AP钉扎层的去磁场彼此抵消，并且偏置堆叠为第一和第二SV堆叠的感测层提供磁通闭合。

公开(公告)号：US20050177995A1

公开(公告)日：2005-08-18

申请号：US10779941

申请日：2004-02-17

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3932 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49128 ,  Y10T29/49155

摘要： Methods of making a read sensor with a selectively deposited lead layers are disclosed. In one illustrative example, the method includes the acts of forming a plurality of read sensor layers over a wafer; forming a monolayer photoresist to mask the plurality of read sensor layers in a central region; ion milling to remove the unmasked plurality of read sensor layers in side regions to thereby form a read sensor in the central region; depositing longitudinal bias layers in the side regions; and depositing a silicon reactant layer over the longitudinal bias layers in the side regions. After removing the monolayer photoresist, a silicon reduction process and a hydrogen reduction process are sequentially performed for the selective depositions of the lead material. In the silicon reduction process, tungsten hexafluoride (WF6) and argon (Ar) gases are passed over the wafer to thereby selectively deposit a relatively thin W film only on the Si reactant layer in the side regions through the following chemical reaction: 2WF6+3Si→2W+3SiF4. In the hydrogen reduction process, WF6 and hydrogen (H2) gases are passed over the wafer to thereby selectively deposit a relatively thick W film only on the W film in the side regions through the following chemical reaction: WF6+3H2→W+6HF.

摘要翻译： 公开了制造具有选择性沉积引线层的读取传感器的方法。 在一个说明性示例中，该方法包括在晶片上形成多个读取传感器层的动作; 形成单层光致抗蚀剂以掩蔽中心区域中的多个读取传感器层; 离子研磨以去除侧面区域中未掩蔽的多个读取传感器层，从而在中心区域形成读取传感器; 在侧面区域中沉积纵向偏置层; 以及在侧面区域中的纵向偏压层上沉积硅反应物层。 在去除单层光致抗蚀剂之后，依次进行硅还原法和氢还原法，用于选择性沉积铅材料。 在硅还原过程中，六氟化钨（WF 6 N）和氩（Ar）气体通过晶片，从而选择性地仅在侧区域中的Si反应物层上沉积相对薄的W膜，通过 以下化学反应：2WF 6 + 3 - 2W + 3SiF 4。 在氢还原过程中，WF 6和氢（H 2 H 2）气体通过晶片，从而在W膜中选择性地沉积相对较厚的W膜， 侧面区域通过以下化学反应：WF 6 + 3H 2 - W + 6HF。

公开(公告)号：US20050047027A1

公开(公告)日：2005-03-03

申请号：US10652835

申请日：2003-08-29

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： A Current-Perpendicular-to-Plane (CPP) Giant Magneto-Resistance (GMR) sensor (700/800) has either a composite film (708) embedded into a ferromagnetic reference layer (710) or a composite film (806) embedded into a ferromagnetic keeper layer (804). The embedded composite film is deposited by sputtering from a ferromagnetic metallic target and a non-magnetic oxide target simultaneously or sequentially. Varying sputtering powers of the ferromagnetic metallic and non-magnetic oxide targets leads to various volume fractions of ferromagnetic metallic and non-magnetic oxide phases. By carefully adjusting these volume fractions, the product of junction resistance and area of the CPP GMR sensor (700/800) can be finely tuned to a designed value and thus provide optimum read performance of the CPP GMR sensor (700/800) for magnetic recording at ultrahigh densities.

摘要翻译： 电流 - 垂直平面（CPP）巨磁电阻（GMR）传感器（700/800）具有嵌入到铁磁参考层（710）中的复合膜（708）或嵌入到 铁磁保持层（804）。 通过溅射从铁磁性金属靶和非磁性氧化物靶同时或顺序地沉积嵌入复合膜。 铁磁金属和非磁性氧化物靶的不同溅射功率导致强磁性金属和非磁性氧化物相的各种体积分数。 通过仔细调整这些体积分数，CPP GMR传感器（700/800）的结电阻和面积的乘积可以精细调整到设计值，从而为磁性的CPP GMR传感器（700/800）提供最佳的读取性能 以超高密度记录。

公开(公告)号：US06780524B2

公开(公告)日：2004-08-24

申请号：US10066835

申请日：2002-02-04

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T428/1129 ,  Y10T428/1164 ,  Y10T428/1171 ,  Y10T428/12549 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/12646 ,  Y10T428/12667 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/24967 ,  Y10T428/265

摘要： Disclosed is a spin-valve sensor disposed between first and second gap layers and formed of one or more in-situ oxidized films. The improved spin valve sensor helps eliminate electrical shorting between the spin-valve sensor and shield layers. A fabrication method of the gap layers comprises repeatedly depositing a metallic films on a wafer in a DC-magnetron sputtering module of a sputtering system, and then transferring the wafer in a vacuum to an oxidation module where in-situ oxidation is conducted. This deposition/in-situ oxidation process is repeated until a designed thicknesses of gap layers is attained. Smaller, more sensitive spin-valve sensors may be sandwiched between thinner gap layers formed of in-situ oxidized films, thus allowing for greater recording data densities in disk drive systems.

摘要翻译： 公开了一种设置在第一和第二间隙层之间并由一个或多个原位氧化膜形成的自旋阀传感器。 改进的自旋阀传感器有助于消除自旋阀传感器和屏蔽层之间的电气短路。 间隙层的制造方法包括在溅射系统的DC-磁控溅射模块中在晶片上重复沉积金属膜，然后将晶片真空转移到进行原位氧化的氧化模块。 重复该沉积/原位氧化处理，直到达到设计的间隙层的厚度。 较小的，更灵敏的自旋阀传感器可以夹在由原位氧化膜形成的较薄间隙层之间，从而允许磁盘驱动系统中更大的记录数据密度。

公开(公告)号：US06592725B2

公开(公告)日：2003-07-15

申请号：US10219410

申请日：2002-08-14

申请人： Tsann Lin ,  Daniele Mauri

发明人： Tsann Lin ,  Daniele Mauri

IPC分类号： C23C1434

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/0036 ,  C23C14/085 ,  C23C14/568 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3295 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49044

摘要： A method is described comprising forming an insulating polycrystalline seed layer in a first chamber by reactively pulsed DC magnetron sputtering, then forming an insulating amorphous-like seed layer in a second chamber by reactively pulsed DC magnetron sputtering, then forming a conducting seed layer and a ferromagnetic free layer in a third chamber by ion beam sputtering, and then forming the remainder of a spin valve sensor through the antiferromagnetic layer in a fourth chamber by DC magnetron sputtering.

公开(公告)号：US06223420B1

公开(公告)日：2001-05-01

申请号：US09206016

申请日：1998-12-04

申请人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  David John Seagle

发明人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  David John Seagle

IPC分类号： G11B542

CPC分类号： G11B5/3109 ,  B82Y10/00 ,  G11B5/3919 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A read head has a flux guide layer that is immediately adjacent (abuts) the back edge of a read sensor. The flux guide layer is made of a high resistance soft magnetic material that conducts magnetic flux from the back edge of the read sensor so that the magnetic response at the back edge of the read sensor is significantly higher than zero. This increases the efficiency of the read sensor. The material for the flux guide layer is A-B-C where A is selected from the group Fe and Co, B is selected from the group Hf, Y, Ta and Zr and C is selected from the group O and N. In a preferred embodiment A-B-C is Fe—Hf—O and the Ms&rgr; of the flux guide layer is greater than 50 times the Ms&rgr; of the read sensor layer where the read sensor layer is NiFe, Ms is saturation magnetization and &rgr; is resistivity. Because of the flux guides high resistance current shunting losses are nearly eliminated.

摘要翻译： 读头具有与读取传感器的后边缘紧邻（邻接）的磁通引导层。 助焊剂层由高电阻软磁材料制成，其从读取传感器的后边缘传导磁通，使得读取传感器的后边缘处的磁响应明显高于零。 这增加了读取传感器的效率。 助焊剂层的材料是ABC，其中A选自Fe和Co组，B选自Hf，Y，Ta和Zr组，C选自O和N组。在优选实施方案中，ABC是 磁通导向层的Fe-Hf-O和Msrho大于读取传感器层为NiFe的读取传感器层的Msrho的50倍，Ms为饱和磁化强度，rho为电阻率。 由于磁通导向器高阻电流分流损耗几乎消除。

公开(公告)号：US20120299132A1

公开(公告)日：2012-11-29

申请号：US13117922

申请日：2011-05-27

申请人： Tsann Lin

发明人： Tsann Lin

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： G11B5/3909 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3932 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： The invention provides a TMR read sensor with low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces. The low-contact-resistance metal/metal interfaces in a reference or sense layer structure are in-situ formed in a high-vacuum deposition module of a sputtering system, without exposures to low vacuum in a transfer module and damages caused by a plasma treatment conducted in an etching module. The low-contact-resistance metal/oxide interface is formed by utilizing a thin Co—Fe—B reference layer and a thick Co—Fe reference layer to reduce boron diffusion and segregation caused by annealing. The low-contact-resistance oxide/metal interface is formed by replacing a Co—Fe—B sense layer with a Co-rich Co—Fe sense layer to eliminate boron diffusion and segregation caused by annealing. With the low-contact-resistance metal/metal, metal/oxide and oxide/metal interfaces, the TMR read sensor exhibits a junction resistance-area product of below 0.6 Ω-μm2, while maintaining a low ferromagnetic coupling field and a high TMR coefficient.

摘要翻译： 本发明提供具有低接触电阻金属/金属，金属/氧化物和氧化物/金属界面的TMR读取传感器。 参考或感应层结构中的低接触电阻金属/金属界面原位形成在溅射系统的高真空沉积模块中，而不会在转印模块中暴露于低真空并由等离子体处理造成的损坏 在蚀刻模块中进行。 低接触电阻金属/氧化物界面是通过利用薄的Co-Fe-B参考层和厚的Co-Fe参考层形成的，以减少由硼退火导致的硼扩散和偏析。 低接触电阻的氧化物/金属界面是通过用富钴Co-Fe感应层代替Co-Fe-B感应层而形成的，以消除由硼退火引起的硼扩散和偏析。 通过低接触电阻金属/金属，金属/氧化物和氧化物/金属界面，TMR读取传感器的结电阻面积小于0.6＆OHgr; -m2，同时保持低铁磁耦合场和高TMR 系数。