公开(公告)号：US06663713B1

公开(公告)日：2003-12-16

申请号：US08734978

申请日：1996-10-22

申请人： Stuardo A. Robles ,  Visweswaren Sivaramakrishnan ,  Bang C. Nguyen ,  Gayathri Rao ,  Gary Fong ,  Vicente Lam ,  Peter Wai-Man Lee ,  Mei Chang

发明人： Stuardo A. Robles ,  Visweswaren Sivaramakrishnan ,  Bang C. Nguyen ,  Gayathri Rao ,  Gary Fong ,  Vicente Lam ,  Peter Wai-Man Lee ,  Mei Chang

IPC分类号： C23C1600

CPC分类号： H01L21/02118 ,  B05D1/60 ,  C23C16/44 ,  C23C16/452 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/312

摘要： A method and apparatus are disclosed for forming thin polymer layers on semiconductor substrates. In one embodiment, the method and apparatus include the vaporization of stable di-pxylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and the optional blending of the resulting gaseous p-xylylene monomers with one or more polymerizable materials in gaseous form capable of copolymerizing with the p-xylylene monomers to form a low dielectric constant polymerized parylene material. An apparatus is also disclosed which provides for the distribution of the polymerizable gases into the deposition chamber, for cooling the substrate down to a temperature at which the gases will condense to form a polymerized dielectric material, for heating the walls of the deposition chamber to inhibit formation and accumulation of polymerized residues thereon, and for recapturing unreacted monomeric vapors exiting the deposition chamber. An apparatus is further provided downstream of the deposition chamber to control both the flow rate or residence time of the reactive monomer in the deposition chamber as well as to control the pressure of the deposition chamber. Provision is further made for an electrical bias to permit the apparatus to function as a plasma etch chamber, for in situ plasma cleaning of the chamber between depositions, for enhancing cracking of polymerizable precursor material, for heating the walls of the chamber and for providing heat sufficient to prevent polymerization in the gas phase.

摘要翻译： 公开了用于在半导体衬底上形成薄聚合物层的方法和装置。 在一个实施方案中，所述方法和装置包括稳定的二 - 二甲苯的蒸发，将这种气态二聚体材料热解转化成反应性单体，以及任选地将所得气态对二甲苯单体与一种或多种气态形式的可聚合材料 能够与对二甲苯单体共聚以形成低介电常数的聚对二甲苯聚合物。 还公开了一种设备，其提供可聚合气体分布到沉积室中，用于将衬底冷却至气体冷凝以形成聚合电介质材料的温度，以加热沉积室的壁以抑制 在其上聚合的残余物的形成和积累，以及用于重新捕获离开沉积室的未反应的单体蒸气。 还在沉积室的下游设置一个装置，以控制反应性单体在沉积室中的流速或停留时间以及控制沉积室的压力。 进一步提供电偏压以允许该装置用作等离子体蚀刻室，用于沉积之间的腔室的原位等离子体清洁，用于增强可聚合前体材料的裂化，用于加热室的壁并提供热量 足以防止气相中的聚合。

公开(公告)号：US5968588A

公开(公告)日：1999-10-19

申请号：US819674

申请日：1997-03-17

申请人： Visweswaren Sivaramakrishnan ,  Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

发明人： Visweswaren Sivaramakrishnan ,  Yen-Kun Wang ,  Fong Chang ,  Thanh Pham ,  Jeff Plante

IPC分类号： C23C16/448 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/52 ,  C23C16/4481

摘要： An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line. A second steady state pressure is measured with the pressure gauge. Calibration information is computed using the first steady state pressure and second steady state pressure based on sonic flow theory. The calibration information is used to calibrate the controller to correct deviations in the liquid flow rate and achieve a target liquid precursor flow rate for improving wafer uniformity.

摘要翻译： 用于原位控制液体前体进入沉积室的装置包括液体注射系统，其具有连接到沉积室上游的室入口管的液体注入口。 液体注射系统包括液体前体供应源，载气供应器，蒸发器和控制液体前体和载气流到腔室的控制器。 旁路管路连接到腔室入口管线，并且包括旁通阀，声波孔口和声波孔口上游的压力计。 为了校准液体前体的流动，以载气声音流速将载气流引导到旁路管线中。 用压力表测量第一稳态压力。 液体前体蒸发并引导到载气流入旁通管线。 用压力表测量第二稳态压力。 基于声流理论，使用第一稳态压力和第二稳态压力计算校准信息。 校准信息用于校准控制器以校正液体流速中的偏差，并实现目标液体前体流速以改善晶片均匀性。

公开(公告)号：US08900399B2

公开(公告)日：2014-12-02

申请号：US13050807

申请日：2011-03-17

申请人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Kyle Ross Tantiwong ,  Visweswaren Sivaramakrishnan

发明人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Kyle Ross Tantiwong ,  Visweswaren Sivaramakrishnan

IPC分类号： C23F1/00 ,  H01L31/18 ,  H01L31/048 ,  H01L31/068

CPC分类号： H01L31/1876 ,  H01L21/68728 ,  H01L31/048 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： An anodic etching system for simultaneously etching a multiplicity of substrates comprises: an etching tank for containing therein an etchant solution; a power supply connected between a first electrode and a second electrode, the first electrode and the second electrode being immersible in the etchant solution and positioned at opposite ends of the tank; and a plurality of support plates serially arranged between the first electrode and the second electrode and sealed to walls of the tank, wherein each of the plurality of support plates is configured to support at least one of the multiplicity of substrates, and wherein any consecutive pair of the plurality of support plates defines an isolated volume of the tank for containing a portion of the etchant solution. The plurality of support plates may be susceptors configured for holding the multiplicity of substrates in a chemical vapor deposition tool.

摘要翻译： 用于同时蚀刻多个基板的阳极蚀刻系统包括：用于在其中容纳蚀刻剂溶液的蚀刻槽; 连接在第一电极和第二电极之间的电源，所述第一电极和所述第二电极浸入所述蚀刻液中并位于所述槽的相对端; 以及多个支撑板，其串联地布置在所述第一电极和所述第二电极之间并且密封到所述罐的壁，其中所述多个支撑板中的每一个被配置为支撑所述多个基板中的至少一个，并且其中， 所述多个支撑板限定了用于容纳蚀刻剂溶液的一部分的罐的隔离体积。 多个支撑板可以是构造成用于将多个基板保持在化学气相沉积工具中的基座。

公开(公告)号：US08298629B2

公开(公告)日：2012-10-30

申请号：US12392448

申请日：2009-02-25

申请人： Visweswaren Sivaramakrishnan ,  Kedarnath Sangam ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Quoc Vinh Truong

发明人： Visweswaren Sivaramakrishnan ,  Kedarnath Sangam ,  Tirunelveli S. Ravi ,  Andrzej Kaszuba ,  Quoc Vinh Truong

IPC分类号： C23C8/00 ,  C23C16/00

CPC分类号： C23C16/481 ,  C23C16/0209 ,  C23C16/455 ,  C23C16/4582 ,  C23C16/46 ,  C23C16/463 ,  C23C16/54 ,  C30B25/105 ,  C30B25/12 ,  C30B29/06

摘要： An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.

摘要翻译： 公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。 在沉积期间，许多晶片被包含在晶片套筒内，其包括间隔开的多个晶片承载板，以最小化处理体积。 工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。 吹扫气体在反应器室内的晶片套筒外部流动，以最小化壁沉积。 此外，灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。 为了改善均匀性，工艺气体流动的方向可以在横流构型中变化。 将灯排序与多反应器系统中的交叉流处理相结合，可实现高通量沉积，具有良好的膜均匀性和有效利用工艺气体。

公开(公告)号：US20110300715A1

公开(公告)日：2011-12-08

申请号：US13050807

申请日：2011-03-17

申请人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Visweswaren Sivaramakrishnan

发明人： Tirunelveli S. Ravi ,  Ananda H. Kumar ,  Ashish Asthana ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/306 ,  C25F7/00 ,  C25F3/02

CPC分类号： H01L31/1876 ,  H01L21/68728 ,  H01L31/048 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic (PV) cell panel wherein all PV cells are formed simultaneously on a two-dimensional array of monocrystalline silicon mother wafers affixed to a susceptor is disclosed. Porous silicon separation layers are anodized in the surfaces of the mother wafers. The porous film is then smoothed to form a suitable surface for epitaxial film growth. An epitaxial reactor is used to grow n- and p-type films forming the PV cell structures. Contacts to the n- and p-layers are deposited, followed by gluing of a glass layer to the PV cell array. The porous silicon film is then separated by exfoliation in a peeling motion across all the cells attached together above, followed by attaching a strengthening layer on the PV cell array. The array of mother wafers may be reused multiple times, thereby reducing materials costs for the completed solar panels.

摘要翻译： 公开了一种制造光伏（PV）电池板的方法，其中所有PV电池同时形成在固定在基座上的单晶硅母晶片的二维阵列上。 在母晶片的表面上阳极氧化多孔硅分离层。 然后使多孔膜平滑以形成用于外延膜生长的合适表面。 使用外延反应器来生长形成PV电池结构的n型和p型膜。 与n层和p层的接触被沉积，然后将玻璃层粘合到PV电池阵列上。 然后通过剥离运动将多孔硅膜分离穿过所有附着在上面的细胞，随后在PV电池阵列上附着一层强化层。 母晶片的阵列可以重复使用多次，从而减少完成的太阳能电池板的材料成本。

公开(公告)号：US20060272774A1

公开(公告)日：2006-12-07

申请号：US11145258

申请日：2005-06-03

申请人： Kazutoshi Maehara ,  Visweswaren Sivaramakrishnan ,  Kentaro Wada ,  Mark Fodor ,  Andrzei Kaszuba

发明人： Kazutoshi Maehara ,  Visweswaren Sivaramakrishnan ,  Kentaro Wada ,  Mark Fodor ,  Andrzei Kaszuba

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/4586 ,  H01L21/68757

摘要： A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.

摘要翻译： 衬底支撑件包括具有可通过电极端子充电的电极的陶瓷盘。 电连接器将外部电源连接到电极端子。 电连接器具有一对相对的钳形臂，尺寸适于围绕电极端子的凹槽和一对通孔，用于接收能够围绕电极端子紧固相对的夹持臂的紧固组件。

公开(公告)号：US07094313B2

公开(公告)日：2006-08-22

申请号：US10829520

申请日：2004-04-21

申请人： Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Mario David Silvetti ,  Talex Sajoto

发明人： Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Mario David Silvetti ,  Talex Sajoto

IPC分类号： C23F1/02 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/5096 ,  H01J37/32183

摘要： A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

摘要翻译： 衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。 处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。 阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

公开(公告)号：US07055809B2

公开(公告)日：2006-06-06

申请号：US10817396

申请日：2004-04-02

申请人： Visweswaren Sivaramakrishnan ,  John M. White

发明人： Visweswaren Sivaramakrishnan ,  John M. White

IPC分类号： B01F3/04

CPC分类号： C23C16/4481 ,  B01F3/022 ,  Y10S261/65

摘要： The disclosure relates to a vaporizer valve which accepts a carrier gas and a pressurized liquid and forms a mixture of the carrier gas and vaporized liquid. An internal cavity receives the carrier gas through a carrier aperture and the liquid through a liquid aperture, and the mixed gas and vapor are exhausted out of the cavity via a third aperture. A moveable diaphragm disposed adjacent to the liquid aperture forms a vaporization region having a pressure gradient. The liquid passing through this pressure gradient vaporizes due to expansion. By controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.

公开(公告)号：US20050096794A1

公开(公告)日：2005-05-05

申请号：US10697731

申请日：2003-10-29

申请人： Pyongwon Yim ,  Satish Sundar ,  Vinay Shah ,  Mario Silvetti ,  Douglas Kitajima ,  Venkatesh Babu ,  Visweswaren Sivaramakrishnan ,  Indrajit Lahiri ,  Surinder Bedi

发明人： Pyongwon Yim ,  Satish Sundar ,  Vinay Shah ,  Mario Silvetti ,  Douglas Kitajima ,  Venkatesh Babu ,  Visweswaren Sivaramakrishnan ,  Indrajit Lahiri ,  Surinder Bedi

IPC分类号： G06F19/00 ,  H01L21/00 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67259 ,  H01L21/67766 ,  H01L21/681

摘要： A robotic positioning system that cooperates with a sensing system to correct robot motion is provided. The sensing system is decoupled from the sensors used conventionally to control the robot's motion, thereby providing repeatable detection of the robot's true position. In one embodiment, the positioning system includes a robot, a controller, a motor sensor and a decoupled sensor. The robot has at least one motor for manipulating a linkage controlling the displacement of a substrate support coupled thereto. The motor sensor is provides the controller with motor actuation information utilized to move the substrate support. The decoupled sensor provides information indicative of the true position the substrate support that may be utilized to correct the robot's motion.

摘要翻译： 提供了与传感系统配合以校正机器人运动的机器人定位系统。 感测系统与常规用于控制机器人运动的传感器分离，从而提供机器人真实位置的可重复检测。 在一个实施例中，定位系统包括机器人，控制器，马达传感器和去耦传感器。 机器人具有至少一个用于操纵联动装置的电动机，控制联接到其上的衬底支架的位移。 马达传感器为控制器提供用于移动基板支架的马达驱动信息。 解耦传感器提供指示可用于校正机器人运动的基板支撑件的真实位置的信息。

公开(公告)号：US20050078953A1

公开(公告)日：2005-04-14

申请号：US10684054

申请日：2003-10-10

申请人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  F26B3/30 ,  F26B19/00 ,  H01L21/20

CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。