Superposed multi-junction color APS
    71.
    发明授权
    Superposed multi-junction color APS 有权
    叠加多交点颜色APS

    公开(公告)号:US06455833B1

    公开(公告)日:2002-09-24

    申请号:US09522286

    申请日:2000-03-09

    申请人: Vladimir Berezin

    发明人: Vladimir Berezin

    IPC分类号: H01L2700

    CPC分类号: H01L27/14647 G01J3/50

    摘要: A CMOS image sensor obtains color through the use of two or three superposed layers. Each pixel in the image sensor includes a plurality of superposed photosensitive p-n junctions with individual charge integration regions. The combination of each of the superposed layers provides increased sensitivity and resolution of a single chip color imager.

    摘要翻译: CMOS图像传感器通过使用两个或三个叠加层来获得颜色。 图像传感器中的每个像素包括具有各个电荷积分区域的多个重叠的光敏p-n结。 每个叠加层的组合提供了增加的单芯片彩色成像器的灵敏度和分辨率。

    Active pixel sensor with fully-depleted buried photoreceptor
    72.
    发明授权
    Active pixel sensor with fully-depleted buried photoreceptor 有权
    有源像素传感器具有完全耗尽的掩埋感光体

    公开(公告)号:US06388243B1

    公开(公告)日:2002-05-14

    申请号:US09516433

    申请日:2000-03-01

    IPC分类号: H01L3106

    CPC分类号: H01L27/14689 H01L27/14609

    摘要: A fully depleted photodiode accumulates charge into both the diode and a separate floating diffusion. The floating diffusion has less capacitance that the overall diode, thereby resulting in a knee-shaped transfer characteristic for charge accumulation. The fully depleted photodiode also include two PN junctions, one near the surface and the other buried below the surface.

    摘要翻译: 完全耗尽的光电二极管将电荷累积到二极管和单独的浮动扩散中。 浮动扩散具有较小的整体二极管的电容,从而导致电荷积累的膝盖形传递特性。 完全耗尽的光电二极管还包括两个PN结,一个在表面附近,另一个埋在表面下。