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公开(公告)号:US20050001325A1
公开(公告)日:2005-01-06
申请号:US10611931
申请日:2003-07-03
申请人: Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
发明人: Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
IPC分类号: H01L21/00 , H01L21/288 , H01L21/768 , H01L23/48
CPC分类号: H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要: Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
摘要翻译: 通过在衬垫材料的存在下使用选择性蚀刻和/或选择性电镀选择性地封盖铜来制造图案化的铜结构。 提供了用于解决在电蚀和/或电镀过程中作为电解质增加的电阻路径从晶片边缘向内流动的问题的装置。