公开(公告)号：US20100227532A1

公开(公告)日：2010-09-09

申请号：US12769332

申请日：2010-04-28

申请人： Keiji Ishibashi ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Takayuki Nishiura

IPC分类号： B24B1/00

CPC分类号： H01L33/32 ,  C09G1/02 ,  C30B29/403 ,  C30B33/00 ,  C30B35/00 ,  H01L21/02024 ,  H01L24/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  Y10T428/24355 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of surface treatment of a Group III nitride crystal film includes polishing a surface of the Group III nitride crystal film, wherein a pH value x and an oxidation-reduction potential value y (mV) of a polishing liquid used for the polishing satisfy both relationships of y≧−50x+1,000 and y≦−50x+1,900.

摘要翻译： III族氮化物晶体膜的表面处理方法包括对用于研磨的研磨液的pH值x和氧化还原电位值y（mV）满足两者的III族氮化物晶体膜的表面进行抛光 y≥-50x + 1,000和y＆nlE; -50x + 1,900的关系。

公开(公告)号：US20100126669A1

公开(公告)日：2010-05-27

申请号：US12597804

申请日：2008-04-24

申请人： Akira Kumagai ,  Keiji Ishibashi

发明人： Akira Kumagai ,  Keiji Ishibashi

IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/306

CPC分类号： C23C14/50 ,  C23C16/4583

摘要： Provided is a vacuum treatment device capable of uniformly treating the whole of a substrate in a vacuum container. In the vacuum treatment device in which the substrate is placed and held in the recess of a substrate holder, the difference between the heights of the surface of the substrate holder and the surface of the substrate to be treated is set to be equal to or shorter than 0.2 mm, and the distance between the side surface of the substrate and the inner surface of the recess of the substrate holder is set to be equal to or shorter than 5 mm.

摘要翻译： 提供一种能够在真空容器中均匀地处理基板的真空处理装置。 在将基板放置并保持在基板保持件的凹部中的真空处理装置中，将基板保持件的表面的高度与待处理的基板的表面之间的差设定为等于或更短 基板的侧面与基板保持架的凹部的内表面之间的距离设定为5mm以下。

公开(公告)号：US07494892B2

公开(公告)日：2009-02-24

申请号：US11706331

申请日：2007-02-15

申请人： Keiji Ishibashi ,  Noriko Tanaka

发明人： Keiji Ishibashi ,  Noriko Tanaka

IPC分类号： H01L21/76

CPC分类号： G01B11/306

摘要： A method of measuring warpage of a rear surface of a substrate includes a substrate detection step, a best fit plane calculation step, and a warpage calculation step. Further, the method of measuring warpage of a rear surface of a substrate can further includes after the substrate detection step and before the best fit plane calculation step: a noise removal step and an outer peripheral portion removal step; the outer peripheral portion removal step and a smoothing step; or the noise removal step, the outer peripheral portion removal step, and the smoothing step. Thereby, a method of measuring warpage of a rear surface with a high surface roughness of a substrate can be provided.

摘要翻译： 测量基板的后表面的翘曲的方法包括基板检测步骤，最佳拟合平面计算步骤和翘曲计算步骤。 此外，测量基板后表面的翘曲的方法还可以包括在基板检测步骤之后和最佳拟合平面计算步骤之前：噪声去除步骤和外周部分去除步骤; 外周部除去工序和平滑工序; 或噪声去除步骤，外周部分去除步骤和平滑步骤。 因此，可以提供测量具有高基材表面粗糙度的背面的翘曲的方法。

公开(公告)号：US07387989B2

公开(公告)日：2008-06-17

申请号：US11148239

申请日：2005-06-09

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： H01L21/302

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时， 在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中， 通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积） 至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积 电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗 提供了可以获得AlN衬底的方法。

公开(公告)号：US07211152B2

公开(公告)日：2007-05-01

申请号：US10673238

申请日：2003-09-30

申请人： Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa ,  Hideki Sunayama ,  Kazutaka Yamada ,  Hideki Matsumura ,  Atsushi Masuda

发明人： Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa ,  Hideki Sunayama ,  Kazutaka Yamada ,  Hideki Matsumura ,  Atsushi Masuda

IPC分类号： C23C16/00 ,  F27B5/14 ,  F27D11/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/46 ,  H01L21/67109

摘要： A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

摘要翻译： 一种加热元件CVD系统，其中一个或多个连接端子保持器被放置在处理容器中，并且每个连接端子保持器保持多个连接端子。 每个连接端子将加热元件电连接到电力供应机构，使得连接到连接端子的加热元件的连接区域不暴露于处理容器中的空间。

公开(公告)号：US20070075041A1

公开(公告)日：2007-04-05

申请号：US11527682

申请日：2006-09-27

申请人： Keiji Ishibashi ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Takayuki Nishiura

IPC分类号： B24D3/02 ,  C09K13/00 ,  B44C1/22 ,  C09C1/68 ,  C09K3/14 ,  C23F1/00

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  H01L33/0095

摘要： The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a GaxIn1-xAsyP1-y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO2, this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1 of an average particle diameter d2 of a secondary particle to an average particle diameter d1 of a primary particle is not less than 1.6 and not more than 10. According to such the polishing slurry, a crystal surface having a small surface roughness can be formed on a GaxIn1-xAsyP1-y crystal at a high polishing rate and effectively.

摘要翻译： 本抛光浆料是用于化学机械抛光Ga x In 1-x N 1 O 1 P 1的表面的抛光浆料 -y 晶体（0 <= x <= 1,0 <= y <= 1），其特征在于该抛光浆料含有由SiO 2形成的磨料颗粒，该磨料颗粒为 初级粒子相关联的二次粒子和二次粒子的平均粒径d 2 N 2的比值d 2 / d 1/2 一次粒子的平均粒径d 1> 1以下的粒子为1.6以上10以下。根据这样的研磨浆料，能够形成表面粗糙度小的结晶面 在高抛光速率下并且有效地在1×x×1×1×1-y 晶体中。

公开(公告)号：US20060216515A1

公开(公告)日：2006-09-28

申请号：US10566633

申请日：2003-11-12

申请人： Katsuo Kazahaya ,  Shigetaka Kawai ,  Yasushi Matsumoto ,  Keiji Ishibashi ,  Takahiro Imai

发明人： Katsuo Kazahaya ,  Shigetaka Kawai ,  Yasushi Matsumoto ,  Keiji Ishibashi ,  Takahiro Imai

IPC分类号： B32B9/00 ,  B32B19/00 ,  C23C16/00 ,  B05D3/00

CPC分类号： C23C16/27 ,  B23G5/06 ,  B23G2200/26 ,  B23G2225/08 ,  B23G2225/16 ,  B23G2225/28 ,  C23C16/0218 ,  Y10T428/30

摘要： The invention provides a diamond coated tool having an excellent cutting performance, wear resistance, adhesion resistance and work surface roughness in combination and a method of producing such a tool. A diamond coated tool comprising a substrate and a diamond coating formed on the surface of the substrate, wherein said substrate is made of a cemented carbide or a cermet, diamond grains constituting a growth surface of said diamond coating has an average grain size of about 1.5 micrometers or below, said diamond coating has a thickness ranging from about 0.1 micrometer to 20 micrometers, and said diamond coating has an average surface roughness Ra ranging from about 0.01 micrometer to 0.2 micrometer. Such a diamond coated tool can be obtained by carburizing the substrate consisting of a cemented carbide or a cermet, and growing up a diamond coating thereon.

摘要翻译： 本发明提供了具有优异的切削性能，耐磨性，耐粘附性和工作表面粗糙度的金刚石涂层工具的组合以及制造这种工具的方法。 一种金刚石涂层工具，包括在基底表面上形成的基底和金刚石涂层，其中所述基底由硬质合金或金属陶瓷制成，构成所述金刚石涂层的生长表面的金刚石晶粒的平均晶粒尺寸为约1.5 所述金刚石涂层具有约0.1微米至20微米的厚度，并且所述金刚石涂层的平均表面粗糙度Ra为约0.01微米至0.2微米。 这种金刚石涂层工具可以通过将由硬质合金或金属陶瓷组成的基材渗碳并在其上生长金刚石涂层来获得。

公开(公告)号：US06661152B2

公开(公告)日：2003-12-09

申请号：US10264264

申请日：2002-10-04

申请人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

发明人： Keiji Ishibashi ,  Takahiro Imai ,  Tomoki Uemura ,  Daichi Kawaguchi ,  Hideaki Nakahata ,  Satoshi Fujii

IPC分类号： H03H925

CPC分类号： H03H9/02582

摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.

摘要翻译： 通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。 这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。 通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

公开(公告)号：US06593548B2

公开(公告)日：2003-07-15

申请号：US10130207

申请日：2002-05-14

申请人： Hideki Matsumura ,  Atsushi Masuda ,  Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa

发明人： Hideki Matsumura ,  Atsushi Masuda ,  Keiji Ishibashi ,  Masahiko Tanaka ,  Minoru Karasawa

IPC分类号： F27B514

CPC分类号： C23C16/45519 ,  C23C16/24 ,  C23C16/345 ,  C23C16/44 ,  C23C16/452

摘要： A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the heating element to a connection terminal for connecting the hearing element to a power supply mechanism is not exposed to a space inside the processing container, specifically, the connection part area is covered by a cylindrical body or a platy body covering the connection part area while providing a space part thereof from the hearing element, or the connection part area allows the space part to be present in a space thereof from the connection terminal and is covered by the cylindrical body or platy body covering the connection part area while providing the space part in a space thereof from the heating element, and hydrogen gas is led from the connection terminal side into the processing container through the space part, whereby the portion of the heating element near the connection part to the power supply mechanism can be prevented from being deteriorated by the material gas, the material gas can be prevented from reacting with cleaning gas during the cleaning for removing the film adhered to the inside of the processing container, the service life of the heating element can be increased, and a film forming environment can be stabilized.

摘要翻译： 一种加热元件CVD装置，其能够提供高生产率并且分解和/或激活通过加热元件引导到处理容器中的材料气体，并且在设置在处理容器中的基板上堆叠膜，其中加热元件的连接部分区域 将用于将听力元件连接到电源机构的连接端子不暴露于处理容器内部的空间，具体地，连接部分区域被覆盖在连接部分区域上的圆柱体或板状体覆盖，同时提供空间 或者连接部分区域可以使空间部分从连接端子出现在其空间中，并且被覆盖在连接部分区域上的圆柱体或板状体覆盖，同时在空间中提供空间部分 来自加热元件，并且氢气从连接端子侧被引导到处理容器中 由于空间部分，由此可以防止靠近供电机构的连接部分附近的加热元件的部分被材料气体劣化，因此可以防止材料气体在清洁期间与清洁气体反应以除去膜 附着在加工容器的内部，能够提高加热元件的使用寿命，能够使成膜环境稳定。

公开(公告)号：US06375756B1

公开(公告)日：2002-04-23

申请号：US09633013

申请日：2000-08-04

申请人： Keiji Ishibashi

发明人： Keiji Ishibashi

IPC分类号： B08B700

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： A method for efficiently and completely removing a film deposited inside a film forming chamber and an in-situ cleaning method of a hot element CVD apparatus. A hot element is disposed in a chamber is heated up to a temperature of 2000° C. or higher after the chamber is exhausted. Thereafter a cleaning gas which is decomposed and/or activated by the hot element to generate an activated species that converts the deposited film into gaseous substance is introduced into the chamber.

摘要翻译： 用于有效且完全地除去沉积在成膜室内的膜的方法和热元素CVD装置的原位清洗方法。 设置在室中的热元件在室耗尽之后被加热到高达2000℃或更高的温度。 此后，由热元件分解和/或激活以产生将沉积膜转化为气态物质的活化物质的清洁气体被引入室中。