公开(公告)号：US06555925B1

公开(公告)日：2003-04-29

申请号：US09517187

申请日：2000-03-02

申请人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tamao Takase ,  Hisashi Kaneko ,  Hideki Shibata

发明人： Kazuyuki Higashi ,  Noriaki Matsunaga ,  Akihiro Kajita ,  Tamao Takase ,  Hisashi Kaneko ,  Hideki Shibata

IPC分类号： H01L23544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a method of producing a semiconductor device in which at least one alignment mark to be used in an exposure process of a lithographic process is formed of a wiring material which is copper or includes copper as a main component, and the alignment mark is formed entirely in an area outside an area where dicing is to be executed.

摘要翻译： 本发明是一种制造半导体器件的方法，其中在光刻工艺的曝光处理中使用的至少一个对准标记由铜或者铜作为主要成分的布线材料形成，并且对准标记 完全在要执行切割的区域外的区域中形成。

公开(公告)号：US06518177B1

公开(公告)日：2003-02-11

申请号：US09783561

申请日：2001-02-15

申请人： Takashi Kawanoue ,  Junichi Wada ,  Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Takashi Kawanoue ,  Junichi Wada ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/53209 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is formed by a compound film &agr;&ggr;x made of at least one element &agr; selected from metal elements and at least one element &ggr; selected from the group consisting of boron, carbon, and nitrogen on a base layer containing oxygen (O), and forming a compound film &agr;&ggr;yOz by causing the compound film &agr;&ggr;x to reduce the base layer and thereby oxidizing the compound film &agr;&ggr;x on an interface of the compound film &agr;&ggr;x and the base layer, wherein each of x and y is a ratio of the number of atoms of the element &ggr; to the number of atoms of the element &agr;, and z is a ratio of the number of atoms of the oxygen to the number of atoms of the element &agr;.

摘要翻译： 通过由选自金属元素的至少一种元素α和在含氧（O）的基底层上选自硼，碳和氮的至少一种元素γ制成的化合物膜，形成半导体器件，以及 通过使化合物膜alphagammax减少基底层从而氧化化合物膜的碱性和底层的界面上的化合物膜，形成化合物膜alphagammayOz，其中x和y分别为原子数 元素γ与元素α的原子数之比，z是氧原子数与元素α原子数之比。

公开(公告)号：US06407453B1

公开(公告)日：2002-06-18

申请号：US09522418

申请日：2000-03-09

申请人： Tadayoshi Watanabe ,  Sachiyo Ito ,  Takamasa Usui ,  Hisashi Kaneko ,  Masako Morita ,  Hirokazu Ezawa

发明人： Tadayoshi Watanabe ,  Sachiyo Ito ,  Takamasa Usui ,  Hisashi Kaneko ,  Masako Morita ,  Hirokazu Ezawa

IPC分类号： H01L2348

CPC分类号： H01L21/76834 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76882 ,  H01L21/76885 ,  H01L21/76888 ,  H01L23/53204 ,  H01L23/5329 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating layer and a metallic wiring layer formed on the semiconductor substrate; and an intermediate layer formed between the insulating layer and the metallic wiring layer in contact with both the insulating layer and the metallic wiring layer, wherein the intermediate layer contains the metallic material forming the metallic wiring layer, Si and O.

摘要翻译： 公开了一种半导体器件，包括形成在半导体衬底上的半导体衬底，绝缘层和金属布线层; 以及形成在与绝缘层和金属布线层两者接触的绝缘层和金属布线层之间的中间层，其中中间层包含形成金属布线层Si和O的金属材料。

公开(公告)号：US06403481B1

公开(公告)日：2002-06-11

申请号：US09371221

申请日：1999-08-10

申请人： Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L214763

CPC分类号： H01L21/76858 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886 ,  H01L2221/1089

摘要： A film formation method for manufacture of a semiconductor device includes the steps of forming a first metal film as a continuous film on a substrate, forming a second metal film as discontinuous films on the substrate formed with the first metal film, and forming a third metal film by plating on the substrate formed with the first and second metal films.

摘要翻译： 用于制造半导体器件的成膜方法包括以下步骤：在基板上形成作为连续膜的第一金属膜，在形成有第一金属膜的基板上形成作为不连续膜的第二金属膜，以及形成第三金属 通过在由第一和第二金属膜形成的基板上电镀。

公开(公告)号：US06348402B1

公开(公告)日：2002-02-19

申请号：US09526880

申请日：2000-03-16

申请人： Takashi Kawanoue ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Tadashi Iijima

发明人： Takashi Kawanoue ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Tadashi Iijima

IPC分类号： H01L214763

CPC分类号： H01L21/76846 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76888 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A groove or hole is formed in an insulating layer formed on a semiconductor substrate, and a first conductive layer including a first metal element is formed on a surface of the insulating layer. By oxidizing the first conductive layer, an oxide layer of the first metal element is formed on a surface of the first conductive layer. A second conductive layer including a second metal element having a free energy of oxide formation lower than that of the first metal element is deposited thereon. By reducing the oxide layer of the first metal element by the second metal element, an oxide layer of the second metal element is formed at the interface between the first conductive layer and the second conductive layer. Further, an interconnection is buried in the groove or hole of the insulating layer. Thereby, a thin second metal oxide layer having excellent barrier properties against an interconnection material and excellent adhesion to the interconnection material can be selectively formed with a uniform thickness on the surface of the first conductive layer used as a barrier metal layer of the interconnection.

摘要翻译： 在形成于半导体衬底上的绝缘层中形成沟槽，在绝缘层的表面上形成包括第一金属元件的第一导电层。 通过氧化第一导电层，在第一导电层的表面上形成第一金属元素的氧化物层。 在其上沉积包括具有低于第一金属元素的自由能的氧化物形成的第二金属元素的第二导电层。 通过由第二金属元件还原第一金属元件的氧化物层，在第一导电层和第二导电层之间的界面处形成第二金属元素的氧化物层。 此外，互连被埋在绝缘层的凹槽或孔中。 由此，可以在用作互连的阻挡金属层的第一导电层的表面上选择性地形成具有优良的互连材料阻隔性和对互连材料的优异粘附性的薄的第二金属氧化物层。

公开(公告)号：US5583720A

公开(公告)日：1996-12-10

申请号：US342836

申请日：1994-11-21

申请人： Katsuaki Ishida ,  Mitsuhisa Sekino ,  Yoshiaki Nagasawa ,  Tomoo Sukagawa ,  Masaharu Sugimoto ,  Tsuyoshi Furukawa ,  Masaki Jinbo ,  Tsuneyori Ino ,  Hisashi Kaneko ,  Shinichi Fukuzawa

发明人： Katsuaki Ishida ,  Mitsuhisa Sekino ,  Yoshiaki Nagasawa ,  Tomoo Sukagawa ,  Masaharu Sugimoto ,  Tsuyoshi Furukawa ,  Masaki Jinbo ,  Tsuneyori Ino ,  Hisashi Kaneko ,  Shinichi Fukuzawa

IPC分类号： G11B5/60 ,  G11B5/127 ,  G11B5/48 ,  G11B5/55 ,  G11B21/02 ,  G11B25/04 ,  G11B33/12 ,  H05K1/18 ,  G11B5/012 ,  G11B5/54

CPC分类号： G11B33/121 ,  G11B25/043 ,  G11B5/4813 ,  G11B5/4886 ,  G11B5/5526 ,  H05K1/189 ,  G11B5/4846 ,  H05K2201/055

摘要： A magnetic disk drive having one or more magnetic disks, one or more read/write heads each recording or reproducing information for a corresponding one of the magnetic disks, a servo head reading control information from a predetermined one of the magnetic disks, and an actuator supporting the one or more read/write heads and the servo head includes first leads extending from the one or more read/write heads along one side of the actuator, and second leads extending from the servo head along the other side of the actuator so that the second leads can be distanced in space from the first leads.

公开(公告)号：US08456186B2

公开(公告)日：2013-06-04

申请号：US11769432

申请日：2007-06-27

申请人： Kiyoshi Takekoshi ,  Hisatomi Hosaka ,  Junichi Hagihara ,  Kunihiko Hatsushika ,  Takamasa Usui ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Yoshiyuki Ido

发明人： Kiyoshi Takekoshi ,  Hisatomi Hosaka ,  Junichi Hagihara ,  Kunihiko Hatsushika ,  Takamasa Usui ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Yoshiyuki Ido

IPC分类号： G01R31/02 ,  G01R31/00

CPC分类号： G01R31/2862 ,  G01R1/0433 ,  G01R1/0491 ,  G01R31/2831 ,  G01R31/286 ,  G01R31/2865 ,  G01R31/2867 ,  G01R31/287 ,  G01R31/2886

摘要： A reliability evaluation test apparatus of this invention includes a wafer storage section which stores a wafer in a state wherein the electrode pads of a number of devices formed on the wafer and the bumps of a contactor are totally in electrical contact with each other. The wafer storage section transmits/receives a test signal to/from a measurement section and has a hermetic and heat insulating structure. The wafer storage section has a pressure mechanism which presses the contactor and a heating mechanism which directly heats the wafer totally in contact with the contactor to a predetermined high temperature. The reliability of an interconnection film and insulating film formed on the semiconductor wafer are evaluated under an accelerated condition.

摘要翻译： 本发明的可靠性评价试验装置包括晶片存储部，其以形成在晶片上的多个器件的电极焊盘和接触器的凸块完全电接触的状态存储晶片。 晶片存储部分向/从测量部分发送/接收测试信号，并具有密封和隔热结构。 晶片存储部分具有压力接触器的压力机构和将与接触器完全接触的晶片直接加热到预定高温的加热机构。 在加速条件下评估形成在半导体晶片上的互连膜和绝缘膜的可靠性。

公开(公告)号：US08232197B2

公开(公告)日：2012-07-31

申请号：US12585238

申请日：2009-09-09

申请人： Makoto Honda ,  Kaori Yomogihara ,  Kazuhiro Murakami ,  Masanori Numano ,  Takahito Nagamatsu ,  Hideaki Harakawa ,  Hideto Matsuyama ,  Hirokazu Ezawa ,  Hisashi Kaneko

发明人： Makoto Honda ,  Kaori Yomogihara ,  Kazuhiro Murakami ,  Masanori Numano ,  Takahito Nagamatsu ,  Hideaki Harakawa ,  Hideto Matsuyama ,  Hirokazu Ezawa ,  Hisashi Kaneko

IPC分类号： H01L21/4763 ,  H01L21/28

CPC分类号： H01L21/76802 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76814

摘要： An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF3 or HF. A thermally decomposable reaction product produced as a result of the etching is removed by heat treatment.

摘要翻译： 对形成在导电层上的绝缘膜进行干蚀刻，以在绝缘膜上形成连接孔，使导电层露出。 将等离子体供应到暴露的导电层上以干燥在连接孔中产生的损伤层。 作为干式清洗的连接孔中产生的产品通过湿法除去。 通过使用包括NF 3或HF的气体的化学干法，蚀刻形成在连接孔中的作为湿法处理的结果的氧化膜。 通过热处理除去作为蚀刻结果产生的可热分解的反应产物。

公开(公告)号：US07667332B2

公开(公告)日：2010-02-23

申请号：US11265231

申请日：2005-11-03

申请人： Masaaki Hatano ,  Motoya Okazaki ,  Junichi Wada ,  Takeshi Nishioka ,  Hisashi Kaneko ,  Takeshi Fujimaki ,  Kazuyuki Higashi ,  Kenji Yoshida ,  Noriaki Matsunaga

发明人： Masaaki Hatano ,  Motoya Okazaki ,  Junichi Wada ,  Takeshi Nishioka ,  Hisashi Kaneko ,  Takeshi Fujimaki ,  Kazuyuki Higashi ,  Kenji Yoshida ,  Noriaki Matsunaga

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： G06F17/5068

摘要： A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.

摘要翻译： 一种用于产生图案的方法包括：读出互连布局和孔布局;布置规定互连图案的布局布局;布置配置为连接到互连图案的孔图案的孔布局; 在图案处理区域中将在相同互连层级中连接的孔图案中的一个提取到所述互连图案之一; 提取包括所提取的孔图案的第一处理区域; 计算包括在第一处理区域中的互连图案的第一图案密度; 以及基于所述第一图案密度在所述第一处理区域中生成第一附加图案。

公开(公告)号：US20090290261A1

公开(公告)日：2009-11-26

申请号：US12358094

申请日：2009-01-22

申请人： Hisashi Kaneko ,  Keiji Aruga

发明人： Hisashi Kaneko ,  Keiji Aruga

IPC分类号： G11B21/16

CPC分类号： G11B5/486

摘要： A carriage block body is coupled to a support shaft for relative rotation. A carriage arm extends from the carriage block body along an imaginary plane perpendicular to the longitudinal axis of the support shaft. A head suspension is attached to the tip end of the carriage arm. A wiring extends outside the contour of the head suspension along the side of the carriage arm. A projection protrudes from the side of the carriage arm. An adhesive is utilized to bond the wiring to the projection. Even though airflow generated along the surface of a rotating disk medium collides against the carriage arm, the wiring is reliably prevented from fluttering outside the contour of the head suspension. The vibration of the wiring is thus significantly suppressed. The carriage arm is prevented from vibrating.

摘要翻译： 滑架主体联接到支撑轴以进行相对旋转。 滑架臂沿着与支撑轴的纵向轴线垂直的假想平面从滑架块体延伸。 头悬挂装在托架臂的末端。 布线沿着支架臂的侧面延伸到头部悬架的轮廓之外。 突出部从支架臂的侧面突出。 使用粘合剂将布线粘合到突起。 即使沿着旋转盘介质的表面产生的气流与托架臂碰撞，也可以可靠地防止布线在头部悬架的轮廓外部飘动。 因此，显着地抑制了布线的振动。 防止支架臂振动。