公开(公告)号：US06803589B2

公开(公告)日：2004-10-12

申请号：US09957511

申请日：2001-09-21

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G21K510

CPC分类号： G03B27/42

摘要： There is disclosed an apparatus applied to exposure by a charged beam, having a pattern information acquiring section acquiring information on a character projection pattern formed in a character projection aperture mask, a first information storing section storing information on a reference pattern, and an identifying section identifying a shape of the character projection pattern by comparing the information on the character projection pattern with the information on the reference pattern.

摘要翻译： 公开了一种应用于通过带电束曝光的装置，具有图案信息获取部分获取关于形成在字符投影孔径掩模中的字符投影图案的信息，存储关于参考图案的信息的第一信息存储部分和识别部分 通过将字符投影图案的信息与参考图案的信息进行比较来识别字符投影图案的形状。

公开(公告)号：US06737658B1

公开(公告)日：2004-05-18

申请号：US09669732

申请日：2000-09-26

申请人： Tetsuro Nakasugi ,  Toru Koike

发明人： Tetsuro Nakasugi ,  Toru Koike

IPC分类号： H01J37302

CPC分类号： H01J37/28 ,  H01J2237/24578 ,  H01J2237/2817 ,  H01J2237/2826

摘要： A first beam radiation is effected by uniformly radiating an electron beam on a vicinity of an underlying mark formed on a sample. The underlying mark is formed of a material with an emission efficiency of secondary electrons different from that of the other part of the sample. Thus, a surface of the sample is charged. A second beam radiation is effected by radiating an electron beam under conditions different from those of the first beam radiation, thereby scanning the mark. Secondary electrons from the surface of the sample are detected to determined the mark position. On the basis of the mark position, an alignment exposure is effected.

摘要翻译： 通过在形成在样品上的下面标记的附近均匀地辐射电子束来实现第一光束辐射。 底层标记由具有不同于样品其他部分的二次电子的发射效率的材料形成。 因此，样品的表面被充电。 通过在与第一光束辐射不同的条件下辐射电子束来实现第二光束辐射，从而扫描标记。 检测来自样品表面的二次电子以确定标记位置。 基于标记位置，进行对准曝光。

公开(公告)号：US6147355A

公开(公告)日：2000-11-14

申请号：US379098

申请日：1999-08-23

申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。