公开(公告)号：US08891266B2

公开(公告)日：2014-11-18

申请号：US13418921

申请日：2012-03-13

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H02M7/00 ,  H02M7/06

CPC分类号： H02M7/106 ,  H01L21/304 ,  H01L21/6835 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/872 ,  H01L2221/6835 ,  H01L2221/68368 ,  Y02B70/1483

摘要： High voltage diode-connected gallium nitride high electron mobility transistor structures or Schottky diodes are employed in a network including high-k dielectric capacitors in a solid state, monolithic voltage multiplier. A superjunction formed by vertical p/n junctions in gallium nitride facilitates operation of the high electron mobility transistor structures and Schottky diodes. A design structure for designing, testing or manufacturing an integrated circuit is tangibly embodied in a machine-readable medium and includes elements of a solid state voltage multiplier.

摘要翻译： 高压二极管连接的氮化镓高电子迁移率晶体管结构或肖特基二极管用于包括固态高分子电压倍增器的高k介质电容器的网络中。 由氮化镓中的垂直p / n结形成的超结，有利于高电子迁移率晶体管结构和肖特基二极管的工作。 用于设计，测试或制造集成电路的设计结构被有形地体现在机器可读介质中并且包括固态电压倍增器的元件。

公开(公告)号：US08841203B2

公开(公告)日：2014-09-23

申请号：US13159877

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/762

CPC分类号： H01L21/7813 ,  H01L21/304

摘要： The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.

摘要翻译： 本公开提供了从单个基底基板开始形成两个器件晶片的方法。 该方法包括首先提供一种结构，该结构包括具有位于基底板的最上表面和最底表面之上或之内的器件层的基底基板。 基底可以具有双面抛光表面。 包括器件层的结构在基底衬底内位于器件层之间的区域中被剥落。 剥落提供了包括基底部分的一部分和器件层之一的第一器件晶片，以及包括基底衬底的另一部分和器件层另一部分的第二器件晶片。

公开(公告)号：US08809168B2

公开(公告)日：2014-08-19

申请号：US13037944

申请日：2011-03-01

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/20 ,  H01L29/02

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： Compressively strained silicon is epitaxially grown directly onto a silicon substrate at low temperature using hydrogen to engineer the strain level. Hydrogen dilution may be varied during such growth to provide a strain gradient.

摘要翻译： 使用氢将压缩应变硅在低温下直接外延生长到硅衬底上以设计应变水平。 在这样的生长过程中氢稀释可以变化以提供应变梯度。

公开(公告)号：US20140048122A1

公开(公告)日：2014-02-20

申请号：US13586138

申请日：2012-08-15

申请人： Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/078 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/20 ,  Y02E10/548

摘要： A photovoltaic device that includes an upper cell that absorbs a first range of wavelengths of light and a bottom cell that absorbs a second range of wavelengths of light. The bottom cell includes a heterojunction comprising a crystalline germanium containing (Ge) layer. At least one surface of the crystalline germanium (Ge) containing layer is in contact with a silicon (Si) containing layer having a larger band gap than the crystalline (Ge) containing layer.

摘要翻译： 一种光电器件，其包括吸收光的第一波长范围的上电池和吸收第二波长波长的底电池。 底部电池包括含有结晶含锗（Ge）层的异质结。 含结晶锗（Ge）层的至少一个表面与含有结晶（Ge）层的带隙较大的含硅（Si）层接触。

公开(公告)号：US20140007932A1

公开(公告)日：2014-01-09

申请号：US13568121

申请日：2012-08-06

申请人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Cheng-Wei Cheng ,  Bahman Hekmatshoartabari ,  Ning Li ,  Devendra K. Sadana ,  Davood Shahrjerdi

IPC分类号： H01L31/074

CPC分类号： H01L31/06875 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02664 ,  H01L31/03042 ,  H01L31/0735 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： Solar cell structures include stacked layers in reverse order on a germanium substrate wherein a n++ (In)GaAs buffer layer plays dual roles as buffer and contact layers in the inverted structures. The absorbing layers employed in such exemplary structures are III-V layers such as (In)GaAs. Controlled spalling may be employed as part of the fabrication process for the solar cell structures, which may be single or multi-junction. The requirement for etching a buffer layer is eliminated, thereby facilitating the manufacturing process of devices using the disclosed structures.

摘要翻译： 太阳能电池结构在锗衬底上以相反的顺序包括堆叠层，其中n ++（In）GaAs缓冲层在倒置结构中起缓冲层和接触层的双重作用。 在这种示例性结构中采用的吸收层是III-V层，例如（In）GaAs。 受控的剥落可以用作太阳能电池结构的制造过程的一部分，其可以是单结或多结。 消除了蚀刻缓冲层的要求，从而便于使用公开的结构的器件的制造过程。

公开(公告)号：US08614447B2

公开(公告)日：2013-12-24

申请号：US13361004

申请日：2012-01-30

申请人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/20

CPC分类号： H01L27/12 ,  H01L29/1025 ,  H01L29/7781

摘要： Improved semiconductor substrates are provided that employ a wide bandgap material between the channel and the insulator. A semiconductor substrate comprises a channel layer comprised of a III-V material; an insulator layer; and a wide bandgap material between the channel layer and the insulator layer, wherein a conduction band offset (ΔEc) between the channel layer and the wide bandgap material is between 0.05 eV and 0.8 eV. The channel layer can be comprised of, for example, In1-xGaxAs or In1-xGaxSb, with x varying from 0 to 1. The wide bandgap material can be comprised of, for example, In1-yAlyAs, In1-yAlyP, Al1-yGayAs or In1-yGayP, with y varying from 0 to 1.

摘要翻译： 提供了改进的半导体衬底，其在通道和绝缘体之间采用宽带隙材料。 半导体衬底包括由III-V材料构成的沟道层; 绝缘体层; 以及在沟道层和绝缘体层之间的宽带隙材料，其中沟道层和宽带隙材料之间的导带偏移（DeltaEc）在0.05eV和0.8eV之间。 沟道层可以由例如In1-xGaxAs或In1-xGaxSb组成，x的变化范围为0到1.宽带隙材料可以由例如In1-yAlyAs，In1-yAlyP，Al1-yGayAs 或In1-yGayP，y从0变化到1。

公开(公告)号：US20130312819A1

公开(公告)日：2013-11-28

申请号：US13533229

申请日：2012-06-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L29/06

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

公开(公告)号：US20130240893A1

公开(公告)日：2013-09-19

申请号：US13418476

申请日：2012-03-13

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L27/088 ,  G06F17/50

CPC分类号： H01L29/7786 ,  G06F17/5045 ,  G06F17/5063 ,  H01L21/6835 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/088 ,  H01L27/095 ,  H01L29/0634 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/872 ,  H01L2221/68363

摘要： A circuit includes a first field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal; and a second field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal. The second field effect transistor and the first field effect transistor are of the same type, i.e., both n-channel transistors or both p-channel transistors. The second drain-source terminal of the first field effect transistor is coupled to the first drain-source terminal of the second field effect transistor; and the gate of the second field effect transistor is coupled to the first drain-source terminal of the second field effect transistor. The resulting three-terminal device can be substituted for a single field effect transistor that would otherwise suffer breakdown under proposed operating conditions.

摘要翻译： 电路包括具有栅极的第一场效应晶体管，第一漏极 - 源极端子和第二漏极 - 源极端子; 以及具有栅极的第二场效应晶体管，第一漏极 - 源极端子和第二漏极 - 源极端子。 第二场效应晶体管和第一场效应晶体管是相同类型的，即n沟道晶体管或两个p沟道晶体管。 第一场效应晶体管的第二漏极 - 源极端子耦合到第二场效应晶体管的第一漏极 - 源极端子; 并且第二场效应晶体管的栅极耦合到第二场效应晶体管的第一漏极 - 源极端子。 所得到的三端子器件可以替代否则在所提出的工作条件下会损坏的单个场效应晶体管。

公开(公告)号：US20130180564A1

公开(公告)日：2013-07-18

申请号：US13350735

申请日：2012-01-13

申请人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Wilfried E. Haensch ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Wilfried E. Haensch ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/042 ,  H01L31/075 ,  H01L31/0224

CPC分类号： H01L31/075 ,  H01L31/022433 ,  H01L31/062 ,  H01L31/076 ,  H01L31/1133 ,  Y02E10/548

摘要： Photovoltaic devices such as solar cells having one or more field-effect hole or electron inversion/accumulation layers as contact regions are configured such that the electric field required for charge inversion and/or accumulation is provided by the output voltage of the photovoltaic device or that of an integrated solar cell unit. In some embodiments, a power source may be connected between a gate electrode and a contact region on the opposite side of photovoltaic device. In other embodiments, the photovoltaic device or integrated unit is self-powering.

摘要翻译： 具有作为接触区域的具有一个或多个场效应孔或电子反转/累积层的太阳能电池的光伏器件被配置为使得电荷反转和/或累积所需的电场由光伏器件的输出电压提供，或者由光伏器件的输出电压提供 的集成太阳能电池单元。 在一些实施例中，电源可以连接在栅极电极和光伏器件相对侧上的接触区域之间。 在其他实施例中，光伏器件或集成单元是自供电的。

公开(公告)号：US20130025658A1

公开(公告)日：2013-01-31

申请号：US13607004

申请日：2012-09-07

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0725 ,  H01L31/0224

CPC分类号： H01L31/0725 ,  C23C14/3407 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/074 ,  H01L31/0747 ,  H01L31/078 ,  H01L31/1808 ,  H01L31/1812 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.