公开(公告)号：US07338743B2

公开(公告)日：2008-03-04

申请号：US11197296

申请日：2005-08-05

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C1/76 ,  G03C1/492 ,  G03C1/494 ,  G03C5/00

CPC分类号： G03F7/0392 ,  G03F7/0395 ,  G03F7/0397

摘要： A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.

摘要翻译： 抗蚀剂材料包括第一聚合物，其中碱溶性基团的一部分被酸酸化的酸不稳定基团保护; 其中基本上所有的碱溶性基团都被被酸化的酸不稳定基团保护的第二聚合物; 和酸发生剂。

公开(公告)号：US07273820B2

公开(公告)日：2007-09-25

申请号：US10399755

申请日：2001-10-09

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Masayuki Endo ,  Yoshihiko Hirai

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Masayuki Endo ,  Yoshihiko Hirai

IPC分类号： H01L21/469

CPC分类号： H01L21/76819 ,  H01L21/31051

摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.

摘要翻译： 在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后，通过具有平面的按压面的按压部件将流体膜压在基板上，使得流体膜的表面为 平面化 在该状态下加热流体膜，由此固化，形成具有平坦表面的固化膜。

公开(公告)号：US20070082292A1

公开(公告)日：2007-04-12

申请号：US11602377

申请日：2006-11-21

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C1/00

CPC分类号： G03F7/11 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/095

摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.

摘要翻译： 用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。 此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物， 在抗蚀剂膜上形成并入酸产生剂。 此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。 因此，形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20060281025A1

公开(公告)日：2006-12-14

申请号：US11409207

申请日：2006-04-24

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C1/00

CPC分类号： C08L59/00 ,  C08L2205/02 ,  G03F7/0392 ,  G03F7/2041 ,  Y10S430/106 ,  C08L2666/16

摘要： In a pattern formation method, a resist film made of a chemically amplified resist material including a first polymer having hemiacetal or hemiketal is formed on a substrate. Then, with a liquid provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film.

摘要翻译： 在图案形成方法中，在基板上形成由包含半缩醛或半缩醛的第一聚合物的化学放大抗蚀剂材料制成的抗蚀剂膜。 然后，通过设置在抗蚀剂膜上的液体，通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 在图案曝光之后，抗蚀剂膜被显影以形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20060263719A1

公开(公告)日：2006-11-23

申请号：US11415158

申请日：2006-05-02

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03C1/00

CPC分类号： G03F7/085 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/12

摘要： A resist film made of a resist material including 4-pentanelactam, that is, hetero cyclic ketone, is formed on a substrate, and subsequently, pattern exposure is performed by irradiating the resist film with exposing light through a mask. Then, the resist film having been subjected to the pattern exposure is developed, thereby forming a resist pattern.

摘要翻译： 在基板上形成由包含4-戊内酰胺的抗蚀剂材料（即杂环酮）制成的抗蚀剂膜，随后通过用掩模曝光光照射抗蚀剂膜来进行图案曝光。 然后，对经过图案曝光的抗蚀剂膜进行显影，从而形成抗蚀剂图案。

公开(公告)号：US20060163198A1

公开(公告)日：2006-07-27

申请号：US11260385

申请日：2005-10-28

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： G03F7/0392 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/40

摘要： In a pattern formation method, a resist film including a lactone ring is formed on a substrate of silicon oxide. Then, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure so as to form a resist pattern made of the resist film. Subsequently, the lactone ring included in the resist pattern is opened by exposing the resist pattern to an acrylic acid aqueous solution. Thereafter, with the resist pattern where the lactone ring has been opened used as a mask, the substrate is etched, so as to form a recess in a good shape.

摘要翻译： 在图案形成方法中，在氧化硅的基板上形成包含内酯环的抗蚀剂膜。 然后，通过用曝光来选择性地照射抗蚀剂膜来进行图案曝光，并且在图案曝光之后使抗蚀剂膜显影，以形成由抗蚀剂膜制成的抗蚀剂图案。 随后，通过将抗蚀剂图案暴露于丙烯酸水溶液来打开包含在抗蚀剂图案中的内酯环。 然后，利用其中已经打开内酯环的抗蚀剂图案作为掩模，蚀刻基板，以形成良好形状的凹部。

公开(公告)号：US06936401B2

公开(公告)日：2005-08-30

申请号：US10610912

申请日：2003-07-02

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  G03C1/73

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/115 ,  Y10S430/12

摘要： The pattern formation material of this invention is a chemically amplified resist material including a polymer whose solubility in a developer is changed in the presence of an acid; an acid generator for generating an acid through irradiation with exposing light; and a base generator for generating a base through irradiation with the exposing light. The base generator is more photosensitive to longer band light of a wavelength longer than extreme UV than to extreme UV when irradiated, as the exposing light, with the extreme UV and the longer band light at equivalent exposure energy.

摘要翻译： 本发明的图案形成材料是一种化学放大抗蚀剂材料，其包括在酸存在下在显影剂中的溶解度改变的聚合物; 用于通过照射曝光而产生酸的酸产生器; 以及用于通过照射曝光光而产生基底的基座发生器。 基极发生器对于长于超过紫外线的波长的长波段的光线，比照射时的极端紫外线更为敏感，作为曝光光，具有极端的紫外线和较长波段的光线具有相等的曝光能量。

公开(公告)号：US20050136361A1

公开(公告)日：2005-06-23

申请号：US11010422

申请日：2004-12-14

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/38 ,  G03B27/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70341

摘要： An exposure system includes a liquid supply section for supplying an immersion liquid onto a resist film formed on a substrate; and an exposure section for irradiating the resist film with exposing light through a mask with the immersion liquid provided on the resist film. The liquid supply section includes an immersion liquid tank for circulating the immersion liquid during exposure.

摘要翻译： 曝光系统包括用于将浸没液体供应到形成在基板上的抗蚀剂膜上的液体供应部分; 以及曝光部，其用设置在抗蚀剂膜上的浸渍液体通过掩模曝光光照射抗蚀剂膜。 液体供应部分包括用于在曝光期间循环浸液的浸液池。

公开(公告)号：US20050130079A1

公开(公告)日：2005-06-16

申请号：US11010273

申请日：2004-12-14

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/38 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/2041

摘要： In a pattern formation method of this invention, a resist film is formed on a substrate and the resist film is exposed to a solution including a compound having a hydrophilic group. Thereafter, with an immersion liquid provided on the resist film having been exposed to the solution, pattern exposure is performed by selectively irradiating the resist film with exposing light, and the resist film is developed after the pattern exposure. Thus, a resist pattern made of the resist film is formed.

摘要翻译： 在本发明的图案形成方法中，在基板上形成抗蚀剂膜，并将抗蚀剂膜暴露于包含具有亲水基团的化合物的溶液。 此后，通过在抗蚀剂膜上设置的浸渍液暴露于溶液中，通过用曝光来选择性地照射抗蚀剂膜来进行图案曝光，并且在图案曝光之后使抗蚀剂膜显影。 因此，形成由抗蚀剂膜制成的抗蚀剂图案。

公开(公告)号：US20050069814A1

公开(公告)日：2005-03-31

申请号：US10859121

申请日：2004-06-03

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/40 ,  G03C5/00 ,  G03F7/00 ,  H01L21/027

CPC分类号： G03F7/40

摘要： A resist film is formed on a substrate, and pattern exposure is performed by selectively irradiating the resist film with exposing light. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, a water-soluble film including a crosslinking agent that crosslinks a material of the resist and an acid, that is, a crosslinkage accelerator for accelerating a crosslinking reaction of the crosslinking agent, is formed over the substrate including the first resist pattern. Thereafter, a crosslinking reaction is caused by annealing between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed. Thus, a second resist pattern made of the first resist pattern and the water-soluble film remaining on the sidewall of the first resist pattern is formed.

摘要翻译： 在基板上形成抗蚀剂膜，并通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 在图案曝光之后，通过显影抗蚀剂膜形成第一抗蚀剂图案，随后形成包含交联抗蚀剂材料和酸的交联剂的水溶性膜，即用于加速交联反应的交联促进剂 的交联剂形成在包括第一抗蚀剂图案的基板上。 此后，通过在第一抗蚀剂图案的侧壁上的水溶性膜的一部分和第一抗蚀剂图案的一部分之间的接触退火引起交联反应，然后，将一部分水溶性 除去与第一抗蚀剂图案不反应的膜。 因此，形成由第一抗蚀剂图案和保留在第一抗蚀剂图案的侧壁上的水溶性膜制成的第二抗蚀剂图案。