公开(公告)号：US07941081B2

公开(公告)日：2011-05-10

申请号：US11968839

申请日：2008-01-03

申请人： Masahiro Sakai

发明人： Masahiro Sakai

IPC分类号： G03G15/09

CPC分类号： G03G15/0921

摘要： A developing unit for developing an electrostatic latent image formed on the outer peripheral surface of a latent image bearer rotating in one direction utilizes an electrified developer that is prepared by mixing two components, or an electrostatically chargeable toner and magnetic carrier. The developing unit includes a developing roller for supplying the developer to the latent image bearer and a carrier collecting roller disposed on the downstream side of the developing roller with respect to the rotational direction of the latent image bearer. The carrier collecting roller includes first and second magnetic pole elements of different magnetic polarities, both presenting a magnetic field intensity of 400 G to 750 G. The first magnetic pole element is disposed at a position on the opposite side across the center of the carrier collecting roller from the position opposing the latent image bearer. The second magnetic pole element is disposed at a position opposing the developing roller.

摘要翻译： 用于显影形成在一个方向上旋转的潜像载体的外周面上的静电潜像的显影单元利用通过混合两个组分或可静电电荷的调色剂和磁性载体制备的带电显影剂。 显影单元包括用于将显影剂供应到潜像承载体的显影辊和相对于潜像载体的旋转方向设置在显影辊的下游侧的载体收集辊。 载体收集辊包括具有400G至750G的磁场强度的不同磁极性的第一和第二磁极元件。第一磁极元件设置在横跨载体收集的中心的相反侧的位置 从与潜像载体相对的位置滚动。 第二磁极元件设置在与显影辊相对的位置。

公开(公告)号：US07853231B2

公开(公告)日：2010-12-14

申请号：US11661115

申请日：2006-01-17

申请人： Yousuke Iizuka ,  Shinsuke Ogawa ,  Masahiro Sakai

发明人： Yousuke Iizuka ,  Shinsuke Ogawa ,  Masahiro Sakai

IPC分类号： H04B1/10

CPC分类号： H04B7/0877 ,  H04B7/0817

摘要： When the diversity reception is cut, communications with the base station are continued. When it is judged by the judgment section of the mobile communication terminal that a predetermined disconnection requirement for disconnecting diversity reception is satisfied, the gain control section of the digital baseband circuitry 20 reduces the gain of the AGC14B contained in the RF receiver circuitry 10B constituting the disconnection target by a fixed value at fixed times. Diversity reception is cut after the level of the signal output by the AGC14B has reached zero.

摘要翻译： 当分集接收被切断时，继续与基站的通信。 当通过移动通信终端的判断部分判断出满足用于断开分集接收的预定断开要求时，数字基带电路20的增益控制部分减少包含在构成该接收机的RF接收机电路10B中的AGC14B的增益 断线目标在固定时间固定值。 在AGC14B输出的信号电平达到零之后，分路接收被切断。

公开(公告)号：US07479658B2

公开(公告)日：2009-01-20

申请号：US10909477

申请日：2004-08-02

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

摘要翻译： 提供了抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

公开(公告)号：US20080205941A1

公开(公告)日：2008-08-28

申请号：US12036444

申请日：2008-02-25

申请人： Masahiro Sakai

发明人： Masahiro Sakai

IPC分类号： G03G15/09

CPC分类号： G03G15/0921 ,  G03G15/0942

摘要： A development apparatus that performs development by forming a magnetic brush using a two-component developer is provided with a developer tank that stores developer; a developer hearing member provided with a development sleeve that carries the developer stored in the developer tank on the outer circumferential face and transports the developer to a development area where the electrostatic latent image on the image bearing carrier is developed, the development sleeve being provided with at least a main pole magnet in which a main pole is formed that faces the development area, and an interpole magnet in which an interpole is formed adjacent to the main pole on the downstream side in a developer transport direction; and a carrier recovery means in which a pushing/bending magnetic pole of the same polarity as the interpole is formed such that magnetic force lines of the interpole in the developer bearing member are pushed/bent to the inside of the developer tank.

摘要翻译： 通过使用双组分显影剂形成磁刷来进行显影的显影装置设置有存储显影剂的显影剂罐; 显影剂助听构件，其设置有显影套筒，该显影套筒将存储在显影剂罐中的显影剂携带在外周面上，并将显影剂输送到图像承载载体上的静电潜像显影的显影区域，显影套筒设置有 至少形成有面向显影区域的主极的主极磁体和在显影剂输送方向上在下游侧与主极相邻地形成极间的极间磁体; 以及载体恢复装置，其中形成与极间极性相同的推/弯磁极，使得显影剂承载构件中的极间的磁力线被推/弯到显影剂罐的内部。

公开(公告)号：US20080096510A1

公开(公告)日：2008-04-24

申请号：US11661115

申请日：2006-01-17

申请人： Yousuke Iizuka ,  Shinsuke Ogawa ,  Masahiro Sakai

发明人： Yousuke Iizuka ,  Shinsuke Ogawa ,  Masahiro Sakai

IPC分类号： H04B1/06

CPC分类号： H04B7/0877 ,  H04B7/0817

摘要： When the diversity reception is cut, communications with the base station are continued. When it is judged by the judgment section of the mobile communication terminal that a predetermined disconnection requirement for disconnecting diversity reception is satisfied, the gain control section of the digital baseband circuitry 20 reduces the gain of the AGC14B contained in the RF receiver circuitry 10B constituting the disconnection target by a fixed value at fixed times. Diversity reception is cut after the level of the signal output by the AGC14B has reached zero.

摘要翻译： 当分集接收被切断时，继续与基站的通信。 当由移动通信终端的判断部分判断出满足用于断开分集接收的预定断开要求时，数字基带电路20的增益控制部分降低包含在RF接收机电路10中的AGC14B的增益 B在固定时间内以固定值构成断开目标。 在AGC14B输出的信号的电平达到零之后，分路接收被切断。

公开(公告)号：US20050028888A1

公开(公告)日：2005-02-10

申请号：US10909477

申请日：2004-08-02

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： C30B25/20 ,  C30B29/40 ,  H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01L29/00 ,  C30B1/00 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.

摘要翻译： 提供了一种用于抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 主要由通式（GaxIny）N（0≤x≤1,0<= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或者由 GaN），不含有Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃和不高于1000℃的温度下外延形成。

公开(公告)号：US06829178B2

公开(公告)日：2004-12-07

申请号：US10269971

申请日：2002-10-15

申请人： Hiyori Koyama ,  Kazuyoshi Oshima ,  Akihiko Hoshida ,  Kiichi Manita ,  Michitaro Kanamitsu ,  Shinji Udo ,  Kazue Kikuchi ,  Kazuaki Ujiie ,  Masahiro Sakai

发明人： Hiyori Koyama ,  Kazuyoshi Oshima ,  Akihiko Hoshida ,  Kiichi Manita ,  Michitaro Kanamitsu ,  Shinji Udo ,  Kazue Kikuchi ,  Kazuaki Ujiie ,  Masahiro Sakai

IPC分类号： G11C700

CPC分类号： G11C16/3436 ,  G11C16/04 ,  G11C29/44

摘要： A counter circuit for counting the number of fails generated during the write and erase processes executed in the predetermined unit such as a sector and a comparison circuit for judging whether the value counted with the counter circuit has exceeded or not the preset allowable value for the number of fails are provided. Accordingly, when the counted value of the counter circuit has exceeded the allowable value set to a register, the write process or erase process is not performed even when a write or erase command is inputted from an external circuit. Thereby, the required test time can be shortened for the electrically programmable and erasable nonvolatile semiconductor memory device such as a flash memory.

摘要翻译： 一种用于计数在诸如扇区的预定单元中执行的写入和擦除处理期间产生的失败次数的计数器电路和用于判断由计数器电路计数的值是否超过了数字的预设容许值的比较电路 提供失败。 因此，当计数器电路的计数值已经超过设置给寄存器的容许值时，即使从外部电路输入写入或擦除命令，也不执行写入处理或擦除处理。 因此，对于诸如闪存的电可编程和可擦除的非易失性半导体存储器件，可以缩短所需的测试时间。

公开(公告)号：US6004866A

公开(公告)日：1999-12-21

申请号：US808655

申请日：1997-02-28

申请人： Masatake Nakano ,  Kiyoshi Mitani ,  Masahiro Sakai

发明人： Masatake Nakano ,  Kiyoshi Mitani ,  Masahiro Sakai

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/3065 ,  H01L27/12 ,  H01L21/30 ,  H01L21/46 ,  H01L21/461

CPC分类号： H01L21/2007

摘要： A method for manufacturing a bonded wafer comprises the steps of; mirror-polishing a surface of first and second substrates, bringing the mirror-polished surfaces of the substrates contact with each other to join them, and subjecting the substrates to a heat treatment to firmly bond them. One of the surfaces of the first and second substrates prior to bonding, or one surface of the bonded wafer is subjected to a polishing treatment for exerting little influence by irregularities on a rear surface of the one substrate or by a figure of a surface of a polishing plate which is in contact with the rear surface of the one substrate.

摘要翻译： 一种接合晶片的制造方法，包括以下步骤： 对第一基板和第二基板的表面进行镜面抛光，使基板的镜面抛光表面相互接触，使基板经受热处理以使其牢固地结合。 在接合之前的第一和第二基板的表面之一或接合的晶片的一个表面经受抛光处理，以在一个基板的后表面上或由一个基板的表面的图形施加不规则的影响 抛光板，其与一个基板的后表面接触。

公开(公告)号：US5885937A

公开(公告)日：1999-03-23

申请号：US888657

申请日：1997-07-07

申请人： Hideaki Adachi ,  Masahiro Sakai ,  Akihiro Odagawa ,  Kentaro Setsune

发明人： Hideaki Adachi ,  Masahiro Sakai ,  Akihiro Odagawa ,  Kentaro Setsune

IPC分类号： H01L39/22

CPC分类号： H01L39/225

摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi.sub.2 Sr.sub.2 (Ca.sub.0.6 Y.sub.0.4)Cu.sub.2 O.sub.8, Bi.sub.2 Sr.sub.2 Cu.sub.2 O.sub.6 and Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 as the barrier layer between the superconducting oxide electrodes. The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr.sub.2 Cu.sub.2.7 Re.sub.0.3 O.sub.7, Sr.sub.2 CaCu.sub.2 O.sub.6 and (La.sub.0.9 Sr.sub.0.1).sub.2 CuO.sub.4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. When using the superconducting oxides including Ba such as YBa.sub.2 Cu.sub.3 O.sub.7 for the electrode, forming a thin film between the electrode and the barrier is better to prevent Ba from reacting with Bi in the barrier layer. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.

摘要翻译： 本发明提供了一种显示令人满意的约瑟夫逊效应的超导隧道结元件。 元素包括Bi基层状化合物如Bi2Sr2（Ca0.6Y0.4）Cu2O8，Bi2Sr2Cu2O6和Bi2Sr2CaCu2O8作为超导氧化物电极之间的阻挡层。 超导氧化物与Bi基化合物的结构匹配应该是好的。 使用一些种类的Cu基超导氧化物如YSr2Cu2.7Re0.3O7，Sr2CaCu2O6和（La0.9Sr0.1）2CuO4用于电极以获得可在高温下工作的约瑟夫逊元素。 当将包括诸如YBa2Cu3O7的Ba的超导氧化物用于电极时，在电极和势垒之间形成薄膜更好地防止Ba与阻挡层中的Bi反应。 包括该元件的超导装置具有各种用途，例如磁检测使用，通信使用和计算使用。

公开(公告)号：US4482008A

公开(公告)日：1984-11-13

申请号：US362838

申请日：1982-03-29

申请人： Tamotsu Nomaguchi ,  Masahiro Sakai

发明人： Tamotsu Nomaguchi ,  Masahiro Sakai

IPC分类号： F24F11/08 ,  F25B13/00 ,  F25B41/04 ,  F25B29/00

CPC分类号： F24F11/085 ,  F25B13/00 ,  F25B41/04 ,  F25B2313/008 ,  F25B2313/009 ,  F25B2313/023 ,  F25B2313/0316 ,  F25B2500/26 ,  F25B2600/0261 ,  Y02B30/52

摘要： The disclosed airconditioner has a refrigerant compressor connected to a refrigerant circuit through a four-way valve in each of the room cooling mode and a first room warming mode of operation. The refrigerant circuit has an indoor heat exchanger, an externally heated heat exchanger, a piping, a first electromagnetic valve and an outdoor heat exchanger connected in series. A second electromagnetic valve is connected in parallel to the outdoor heat exchanger between the piping and the four-way valve to form the refrigerant circuit along with the indoor heat exchanger, the externally heated heat exchanger and the piping for the second room warming mode of operation. During the room cooling mode and first room warming mode of operation, the first electromagnetic valve is opened and the piping and the externally heated heat exchanger hold an amount of liquid refrigerant equal to the volume of the outdoor heat exchanger, while in the second room warming mode of operation in which the second electromagnetic valve and an electromagnetic valve connected across the compressor are open the outdoor heat exchange is filled with liquid refrigerant.

摘要翻译： 所公开的空调机具有在室内冷却模式和第一室内加热方式中的每一个中通过四通阀连接到制冷剂回路的制冷剂压缩机。 制冷剂回路具有串联连接的室内热交换器，外加热换热器，配管，第一电磁阀和室外热交换器。 第二电磁阀与管道和四通阀之间的室外热交换器并联连接，与室内热交换器，外部加热热交换器和第二室内加热方式的管道一起形成制冷剂回路 。 在房间冷却模式和第一室内暖气运转模式下，第一电磁阀打开，管道和外部加热的热交换器保持与室外热交换器的体积相等的液体制冷剂的量，而在第二室内变暖 第二电磁阀和连接在压缩机两端的电磁阀打开室外热交换器的操作模式被液体制冷剂填充。