Silicon film forming apparatus
    71.
    发明申请
    Silicon film forming apparatus 审中-公开
    硅膜形成装置

    公开(公告)号:US20070007128A1

    公开(公告)日:2007-01-11

    申请号:US11519132

    申请日:2006-09-12

    IPC分类号: C23C14/00 C23C16/00

    摘要: A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102′) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1′, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.

    摘要翻译: 硅膜形成装置包括沉积室(10),布置在室中的硅溅射靶(2),将氢气供应到室中的氢气供应电路(102或102')和高频功率 通过向供应到沉积室(10)的气体施加高频电力来产生电感耦合等离子体的施加装置(天线1,1',电源PW等)。 通过等离子体在靶(2)上进行化学溅射,以在衬底S上形成硅膜。可以使用硅烷气体。 硅烷气体供给回路(101)也可以设置有气体储存部(GR)。 硅膜可以在相对较低的温度下廉价且快速地形成。

    Liquid fuel burner
    75.
    发明授权
    Liquid fuel burner 失效
    液体燃料燃烧器

    公开(公告)号:US5603456A

    公开(公告)日:1997-02-18

    申请号:US381862

    申请日:1995-02-07

    摘要: Disclosed is a burner for burning liquid fuel that is able to obtain a long flame in which the proportion of the luminous flame portion is large, and thereby particularly effective for radiant heat transfer. This liquid fuel burner is composed of a fuel feed pipe (4) having a fuel spray nozzle (3) at its distal end, a combustion-assisting gas feed pipe (6) provided concentrically on the outside of the fuel feed pipe (4) to form a combustion-assisting gas passage (5), and an orifice member (7) arranged within the above-mentioned fuel feed pipe (4) at an interval from the distal end of the fuel feed pipe (4). In addition, the orifice (9) of the orifice member (7) and the fuel spray nozzle (3) of the above-mentioned fuel feed pipe (4) are mutually eccentric.

    摘要翻译: PCT No.PCT / JP94 / 00334 Sec。 371日期:1995年2月7日 102(e)日期1995年2月7日PCT 1994年3月2日PCT公布。 公开号WO94 / 29645 日期1994年1月22日公开是燃烧液体燃料的燃烧器,其能够获得发光火焰部分的比例大的长焰,因此对于辐射热传递特别有效。 该液体燃料燃烧器由在其远端具有燃料喷雾喷嘴(3)的燃料供给管(4),同时设置在燃料供给管(4)的外侧的燃烧辅助气体供给管(6) 以形成燃烧辅助气体通路(5),以及从燃料供给管(4)的前端开始配置在上述燃料供给管(4)内的节流部件(7)。 此外,孔构件(7)的孔(9)和上述燃料供给管(4)的燃料喷雾喷嘴(3)相互偏心。

    Silicon oxynitride film and method for forming same, and semiconductor device
    78.
    发明授权
    Silicon oxynitride film and method for forming same, and semiconductor device 有权
    氮氧化硅膜及其形成方法以及半导体器件

    公开(公告)号:US09058982B2

    公开(公告)日:2015-06-16

    申请号:US13823108

    申请日:2010-12-08

    摘要: An insulating film that does not contain hydrogen or free fluorine and has good film properties is provided. A silicon oxynitride film includes silicon, nitrogen, oxygen, and fluorine, wherein the elemental percentage (N+O+F)/Si of the total (N+O+F) of nitrogen (N), oxygen (O), and fluorine (F) to silicon (Si) is in a range of 1.93 to 1.48, and in the silicon oxynitride film, an elemental percentage of silicon ranges from 0.34 to 0.41, an elemental percentage of nitrogen ranges from 0.10 to 0.22, an elemental percentage of oxygen ranges from 0.14 to 0.38, and an elemental percentage of fluorine ranges from 0.17 to 0.24. The film can be formed on a substrate by inductive coupling type plasma CVD whereby a plasma is generated by inductive coupling using a silicon tetrafluoride gas, a nitrogen gas, and an oxygen gas as a material gas.

    摘要翻译: 提供不含氢或游离氟并具有良好膜性能的绝缘膜。 氧氮化硅膜包括硅,氮,氧和氟,其中氮(N),氧(O)和氟的总(N + O + F)的总量(N + O + F)/ Si (F)与硅(Si)的比例在1.93〜1.48的范围内,氮氧化硅膜的元素百分比为0.34〜0.41,氮的元素百分比为0.10〜0.22,元素的比例 氧的范围为0.14〜0.38,氟的元素百分比为0.17〜0.24。 可以通过感应耦合型等离子体CVD在基板上形成膜,由此通过使用四氟化硅气体,氮气和氧气作为原料气体的感应耦合产生等离子体。

    DISPLAY DEVICE AND THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR
    80.
    发明申请
    DISPLAY DEVICE AND THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREFOR 审中-公开
    显示器件和薄膜晶体管衬底及其制造方法

    公开(公告)号:US20130265530A1

    公开(公告)日:2013-10-10

    申请号:US13994774

    申请日:2011-12-14

    IPC分类号: G02F1/13363

    摘要: A display device includes a TFT substrate (30) containing a transparent first resin substrate (11) having the heat resistance and a plurality of TFTs (5) disposed on the first resin substrate (11) and a counter-substrate (50) containing a transparent second resin substrate (41) having the heat resistance and being disposed opposing to the TFT substrate (30), wherein the first resin substrate (11) and the second resin substrate (41) have a thickness of 5 μm or more and 20 μm or less and a birefringence of 0.002 or more and 0.1 or less.

    摘要翻译: 显示装置包括:含有具有耐热性的透明第一树脂基板(11)的TFT基板(30)和配置在第一树脂基板(11)上的多个TFT(5);以及对置基板(50) 透明第二树脂基板(41),其具有耐热性并与TFT基板(30)相对设置,其中,第一树脂基板(11)和第二树脂基板(41)的厚度为5μm以上且20μm以上 或更小,双折射率为0.002以上且0.1以下。