公开(公告)号：US20100102297A1

公开(公告)日：2010-04-29

申请号：US12532077

申请日：2008-02-20

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/12

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  C30B29/403 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/16 ,  H01S5/0201 ,  H01S5/34333

摘要： A source gas flows through a flow channel 23 of a metal-organic vapor phase epitaxy reactor 21. The source gas is fed in a direction across a main surface 25a of a susceptor 25. GaN substrates 27a to 27c are placed on the susceptor main surface 25a. An off-angle monotonically varies on a line segment extending from one point on the edges of the main surfaces of the gallium nitride substrates 27a to 27c to another point on the edges. The orientations of the GaN substrates 27a to 27c are represented by the orientations of the orientation flats. By placing the plurality of gallium nitride substrates 27a to 27c on the susceptors 25 of the metal-organic vapor phase epitaxy reactor 21 in these orientations, the influence of the off-angle distribution can be reduced by using the influence originated from the flow of the source gas.

摘要翻译： 源气体流过金属 - 有机气相外延反应器21的流动通道23.源气体沿着穿过基座25的主表面25a的方向进给。将GaN衬底27a至27c放置在基座主表面 25a。 在从氮化镓衬底27a至27c的主表面的边缘上的一个点延伸到边缘上的另一个点的线段上，偏角单调变化。 GaN衬底27a至27c的取向由取向平面的取向表示。 通过将这些取向中的多个氮化镓基板27a〜27c配置在金属 - 有机气相外延反应器21的基座25上，可以通过使用源自该流动的影响来减小偏角分布的影响 源气。

公开(公告)号：US08513645B2

公开(公告)日：2013-08-20

申请号：US12532077

申请日：2008-02-20

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/00 ,  H01L29/12

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  C30B29/403 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02661 ,  H01L33/16 ,  H01S5/0201 ,  H01S5/34333

摘要： A source gas flows through a flow channel 23 of a metal-organic vapor phase epitaxy reactor 21. The source gas is fed in a direction across a main surface 25a of a susceptor 25. GaN substrates 27a to 27c are placed on the susceptor main surface 25a. An off-angle monotonically varies on a line segment extending from one point on the edges of the main surfaces of the gallium nitride substrates 27a to 27c to another point on the edges. The orientations of the GaN substrates 27a to 27c are represented by the orientations of the orientation flats. By placing the plurality of gallium nitride substrates 27a to 27c on the susceptors 25 of the metal-organic vapor phase epitaxy reactor 21 in these orientations, the influence of the off-angle distribution can be reduced by using the influence originated from the flow of the source gas.

摘要翻译： 源气体流过金属 - 有机气相外延反应器21的流动通道23.源气体沿着穿过基座25的主表面25a的方向进给。将GaN衬底27a至27c放置在基座主表面 25a。 在从氮化镓衬底27a至27c的主表面的边缘上的一个点延伸到边缘上的另一个点的线段上，偏角单调变化。 GaN衬底27a至27c的取向由取向平面的取向表示。 通过将这些取向中的多个氮化镓基板27a〜27c配置在金属 - 有机气相外延反应器21的基座25上，可以通过使用源自该流动的影响来减小偏角分布的影响 源气。

公开(公告)号：US20110198566A1

公开(公告)日：2011-08-18

申请号：US13124612

申请日：2010-01-27

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura ,  Toshio Ueda ,  Eiryo Takasuka ,  Yasuhiko Senda

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura ,  Toshio Ueda ,  Eiryo Takasuka ,  Yasuhiko Senda

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L21/0254 ,  B82Y20/00 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01S5/34333 ,  H01S2304/04

摘要： A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N2 and NH3 into active nitrogen at 900° C. is supplied. In addition, in the step of interrupting epitaxial growth, the gas different from a gas used as an N source of the well layer is supplied.

摘要翻译： 制造发光元件的方法涉及具有包括In和N的量子阱结构的III-V族化合物半导体的发光元件的制造方法，包括以下步骤：形成包括In和N的阱层 ; 形成具有比所述阱层的带隙宽的带隙的阻挡层; 以及在形成阱层的步骤之后和在形成阻挡层的步骤之前，提供包括N的气体并中断外延生长。 在中断外延生长的步骤中，提供分解效率高于在900℃从N2和NH3分解成活性氮的分解效率的气体。 此外，在中断外延生长的步骤中，供给与用作阱层的N源的气体不同的气体。

公开(公告)号：US07879636B2

公开(公告)日：2011-02-01

申请号：US12771018

申请日：2010-04-30

申请人： Masaki Ueno ,  Yusuke Yoshizumi ,  Takao Nakamura

发明人： Masaki Ueno ,  Yusuke Yoshizumi ,  Takao Nakamura

IPC分类号： H01L21/00

CPC分类号： H01L21/02389 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is formed on a supporting base 13 in a reactor 10. An organometallic source and ammonia are supplied to the reactor 10 to grow the GaN semiconductor layer 17 on a GaN semiconductor layer 15. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regions 15 and 17 are grown, an atmosphere 19 containing at least one of monomethylamine and monoethylamine is prepared in the reactor 10. After the atmosphere 19 is prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region 17. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductor 17a and an epitaxial wafer E has been fabricated.

摘要翻译： 提供了一种形成无激活退火的p型氮化镓基半导体的方法，该方法可以提供掺杂有p型掺杂剂的氮化镓基半导体。 在反应器10中的支撑基底13上形成含有p型掺杂剂的GaN半导体区17.将有机金属源和氨供给反应器10，以在GaN半导体层15上生长GaN半导体层17。 半导体掺杂有p型掺杂剂。 p型掺杂剂的实例包括镁。 在GaN半导体区域15和17生长之后，在反应器10中制备含有一甲胺和单乙胺中的至少一种的气氛19.制备气氛19后，衬底温度从GaN半导体区域的生长温度降低 当成膜后，当衬底温度降至室温时，制造了p型GaN半导体17a和外延晶片E.

公开(公告)号：US08420419B2

公开(公告)日：2013-04-16

申请号：US13404310

申请日：2012-02-24

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性 主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域将基板产品分解，形成另一基板产品和激光条 。

公开(公告)号：US08139619B2

公开(公告)日：2012-03-20

申请号：US13209054

申请日：2011-08-12

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202

摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.

摘要翻译： 提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。 在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分 用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。 例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度 凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

公开(公告)号：US08105857B2

公开(公告)日：2012-01-31

申请号：US12837306

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/18

CPC分类号： H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341

摘要： A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：形成具有激光结构的衬底产品; 划定衬底产品的第一表面以形成刻痕，其沿着表示六边形III族氮化物半导体的a轴的方向的参考线延伸在第一表面上，划线标记; 将所述基板产品安装在断开装置上以分别通过所述断路装置的第一和第二支撑部分支撑所述基板产品的第一和第二区域; 并且在不支撑位于第一和第二区域之间的基板产品的第三区域的情况下，在第三区域中通过压制与基板标记对准地分解基板产品，以形成另一基板产品和激光条。 激光棒的第一和第二端面形成III族氮化物半导体激光器件的激光腔。

公开(公告)号：US08594145B2

公开(公告)日：2013-11-26

申请号：US12837291

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/1085 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0208 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3404 ,  H01S5/34333

摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

摘要翻译： III族氮化物半导体激光器件包括具有支撑基底，半导体区域和电极的激光器结构。 支撑基底包括六边形III族氮化物半导体和半极性主表面。 半导体区域包括第一和第二覆层以及沿着垂直于半极性主表面的轴布置的有源层。 六边形III族氮化物半导体的c轴相对于法线轴线朝向六边形III族氮化物半导体的m轴倾斜角度ALPHA。 激光器结构包括第一和第二断裂面，其与由六角形III族氮化物半导体的法线轴和m轴限定的m-n平面交叉。 激光装置的激光腔包括第一和第二断裂面。 第一和第二断裂面中的每一个在支撑基座的端面上具有条纹结构。

公开(公告)号：US08389312B2

公开(公告)日：2013-03-05

申请号：US13367846

申请日：2012-02-07

申请人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/22 ,  H01S2301/14

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08213475B2

公开(公告)日：2012-07-03

申请号：US13209101

申请日：2011-08-12

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/323 ,  H01L29/06 ,  H01L29/12

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/3202 ,  H01S5/3211

摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity enabling a low threshold current, on a semipolar surface of a support base the c-axis of a hexagonal group-III nitride of which tilts toward the m-axis. In a laser structure 13, a first surface 13a is a surface opposite to a second surface 13b and first and second fractured faces 27, 29 extend each from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. A scribed mark SM1 extending from the edge 13c to the edge 13d is made, for example, at one end of the first fractured face 27, and the scribed mark SM1 or the like has a depressed shape extending from the edge 13c to the edge 13d. The fractured faces 27, 29 are not formed by dry etching and thus are different from the conventional cleaved facets such as c-planes, m-planes, or a-planes. It is feasible to use emission of a band transition enabling a low threshold current.

摘要翻译： 本发明提供一种III族氮化物半导体激光器件，其具有激光腔，能够在支撑基座的半极性表面上具有低阈值电流，六边形III族氮化物的c轴朝向m轴倾斜。 在激光结构13中，第一表面13a是与第二表面13b相对的表面，第一和第二断裂面27,29从第一表面13a的边缘13c延伸到第二表面13b的边缘13d。 从边缘13c延伸到边缘13d的划线标记SM1例如在第一断裂面27的一端形成，划线标记SM1等具有从边缘13c延伸到边缘13d的凹陷形状 。 断裂面27,29不是通过干蚀刻形成的，因此与常规的切割面不同，例如c面，m面或者a平面。 使用能够实现低阈值电流的频带转换的发射是可行的。