Abstract:
An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.
Abstract:
A cost of a testing device is reduced. A structure of a testing device is simplified. A testing device capable of testing with higher accuracy is provided. A testing device (10) has a structure including a sending unit (13), a receiving unit (14), a control unit (11), and a display (15). The control unit includes a memory portion (21) and an arithmetic portion (22). The sending unit has a function of generating a pulse signal for a probe (40) to generate an ultrasonic wave (51). The receiving unit has a function of generating a first signal including a first analog data (D1) on the basis of the input single input from the probe. The memory portion has a function of storing the first analog data. The arithmetic portion has a function of generating an image signal (S0) output to the display on the basis of the first analog data stored in the memory portion. The display has a function of displaying an image based on the image signal.
Abstract:
A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.
Abstract:
A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, and the display region includes a first group of pixels, a second group of pixels, a third group of pixels, a fourth group of pixels, a first scan line, a second scan line, a first signal line, and a second signal line. The first group of pixels include a first pixel and are arranged in a row direction. The second group of pixels include a second pixel and are arranged in the row direction. The third group of pixels include a first pixel and are arranged in a column direction that intersects the row direction. The fourth group of pixels include a second pixel and are arranged in the column direction. The first signal line is electrically connected to the third group of pixels and the second signal line is electrically connected to the fourth group of pixels. The first scan line is electrically connected to the first group of pixels and the second scan line is electrically connected to the second group of pixels.
Abstract:
A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.
Abstract:
An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
Abstract:
A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
Abstract:
A semiconductor device including a transistor includes a pixel circuit, a monitor circuit, and a correction circuit. The pixel circuit includes a selection transistor, a driving transistor, and a light-emitting element. The monitor circuit includes a monitor light-emitting element and a monitor transistor. The semiconductor device obtains the value of current flowing to the monitor light-emitting element and the monitor transistor and controls the value of current flowing to the light-emitting element and the driving transistor by the correction circuit.
Abstract:
In a display element such as an organic EL element, deterioration progresses due to light emission, and emission luminance is lowered even if the same voltage is applied to the display element. Therefore, use over time causes variations in luminance of each pixel, thereby a so-called “image burn-in” phenomenon occurs. Given this factor, the invention provides a display device which can reduce the difference in deterioration of a display element in each pixel and suppress variations in light emission of a display element in a pixel. It is prevented that only a specific pixel has a long accumulated lighting time. For that purpose, a gray scale of a display pattern is changed to prevent the difference in deterioration of display element in pixels from increasing. Alternatively, a specific display pattern is prevented from being fixedly displayed in a specific region. Further alternatively, a pixel lagging behind in deterioration is deteriorated so that the accumulated lighting time of pixels is equal to each other.
Abstract:
An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.