公开(公告)号：US06465051B1

公开(公告)日：2002-10-15

申请号：US08751899

申请日：1996-11-18

申请人： Turgut Sahin ,  Fred C. Redeker ,  Romuald Nowak ,  Shijian Li ,  Timothy Dyer ,  Derek R. Witty

发明人： Turgut Sahin ,  Fred C. Redeker ,  Romuald Nowak ,  Shijian Li ,  Timothy Dyer ,  Derek R. Witty

IPC分类号： H05H146

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.

摘要翻译： 本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量 到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。 在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。 在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器 前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

公开(公告)号：US09752231B2

公开(公告)日：2017-09-05

申请号：US13469607

申请日：2012-05-11

申请人： Shijian Li

发明人： Shijian Li

IPC分类号： C23C18/16

CPC分类号： C23C18/1617 ,  C23C18/1683

摘要： One or more aspects of this invention pertain to fabrication of electronic devices. One aspect of the present invention is a system for electroless deposition of metal on a substrate. According to one or more embodiments of the present invention, the system comprises a main subsystem in combination with one or more subsystems for electroless deposition on a substrate. Another aspect of the present invention is a method of making an electronic device. According to one or more embodiments of the present invention, the method comprises one or more processes. Descriptions according to one or more embodiments of the system and the processes are presented.

公开(公告)号：US20110143553A1

公开(公告)日：2011-06-16

申请号：US12965765

申请日：2010-12-10

申请人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

发明人： Yaxin Wang ,  Shijian Li ,  Fritz Redeker ,  John Parks ,  Artur Kolics ,  Hyungsuk Alexander Yoon ,  Tarek Suwwan de Felipe ,  Mikhail Korolik

IPC分类号： H01L21/469 ,  B05C3/02 ,  B05C11/00 ,  B05C11/02

CPC分类号： H01L21/288 ,  C23C18/1642 ,  C23C18/1689 ,  C23C18/1872 ,  H01L21/76849

摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.

摘要翻译： 用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。 然后用清洗液在无电沉积模块中冲洗基材的表面。 控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。 将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。 衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。 一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

公开(公告)号：US07749893B2

公开(公告)日：2010-07-06

申请号：US11641361

申请日：2006-12-18

申请人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/4763

CPC分类号： C25D7/123 ,  C23C18/1653 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中，集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

公开(公告)号：US20070295371A1

公开(公告)日：2007-12-27

申请号：US11846400

申请日：2007-08-28

申请人： Younes Achkire ,  Alexander Lerner ,  Boris Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavleiv ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

发明人： Younes Achkire ,  Alexander Lerner ,  Boris Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavleiv ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

IPC分类号： B08B1/00

CPC分类号： H01L21/67034 ,  B08B3/10 ,  H01L21/67751 ,  H01L21/681 ,  H01L21/68764 ,  Y10S414/139

摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

摘要翻译： 在第一方面，提供一种适于处理晶片的模块。 模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与 卸货港 （2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没式流体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。

公开(公告)号：US20060174921A1

公开(公告)日：2006-08-10

申请号：US11398058

申请日：2006-04-04

申请人： Younes Achkire ,  Alexander Lerner ,  Boris Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavleiv ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

发明人： Younes Achkire ,  Alexander Lerner ,  Boris Govzman ,  Boris Fishkin ,  Michael Sugarman ,  Rashid Mavleiv ,  Haoquan Fang ,  Shijian Li ,  Guy Shirazi ,  Jianshe Tang

IPC分类号： B08B3/00

CPC分类号： H01L21/67034 ,  B08B3/10 ,  H01L21/67751 ,  H01L21/681 ,  H01L21/68764 ,  Y10S414/139

摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

公开(公告)号：US20060148387A1

公开(公告)日：2006-07-06

申请号：US11333992

申请日：2006-01-17

申请人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

发明人： Hung Chen ,  John White ,  Shijian Li ,  Fred Redeker ,  Ramin Emami

IPC分类号： B24B29/00

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。

公开(公告)号：US20060097219A1

公开(公告)日：2006-05-11

申请号：US11258466

申请日：2005-10-24

申请人： Benjamin Bonner ,  Anand Iyer ,  Olivier Nguyen ,  Donald Chua ,  Christopher Lee ,  Shijian Li

发明人： Benjamin Bonner ,  Anand Iyer ,  Olivier Nguyen ,  Donald Chua ,  Christopher Lee ,  Shijian Li

IPC分类号： C09K13/00 ,  H01L21/461

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.

摘要翻译： 化学机械抛光组合物，其包含小于约1重量％ 研磨剂，添加剂和水，其中添加剂的重量百分比大于研磨剂的重量百分比。 此外，在浅沟槽隔离工艺中抛光半导体衬底的方法，该方法包括使衬底与抛光装置的抛光垫接触，同时向抛光垫施加高选择性浆料，其中浆料包含小于约1％ 重量 研磨剂，添加剂和水，并且其中添加剂的重量百分比大于研磨剂的重量百分比。 另外，制备化学 - 机械抛光浆料组合物的方法，该方法包括将研磨剂，添加剂和水相加以形成浆料，其中添加剂的重量百分比大于磨料的重量百分数，并且 研磨剂和添加剂一起包含小于2重量％。 的浆料。

公开(公告)号：US07022608B2

公开(公告)日：2006-04-04

申请号：US10419440

申请日：2003-04-21

申请人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

发明人： Lizhong Sun ,  Stan Tsai ,  Shijian Li

IPC分类号： H01L21/302

CPC分类号： C09G1/02

摘要： A method, composition, and computer readable medium for planarizing a substrate. In one aspect, the composition includes one or more chelating agents and ions of at least one transition metal, one or more surfactants, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more chelating agents and ions of at least one transition metal. In one aspect, the method comprises processing a substrate disposed on a polishing pad including performing a first polishing process to substantially remove the copper containing material, performing a second polishing process to remove residual copper containing material, the second polishing process comprising delivering a CMP composition to the polishing pad, mixing one or more chelating agents and ions of at least one transition metal in situ with the CMP composition, and removing residual copper containing materials from the substrate surface. The invention also provides a computer readable medium bearing instructions for planarizing a substrate surface, the instructions arranged, when executed by one or more processors, to cause one or more processors to control a system to perform polishing the substrate to substantially remove copper containing material formed thereon and polishing the substrate with a CMP composition comprising one or more chelating agents and ions of at least one transition metal to remove residual copper containing material.

公开(公告)号：US07014545B2

公开(公告)日：2006-03-21

申请号：US10754997

申请日：2004-01-10

申请人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

发明人： Hung Chih Chen ,  John M. White ,  Shijian Li ,  Fred C. Redeker ,  Ramin Emami

IPC分类号： B24B7/00

CPC分类号： B24B37/30 ,  B24B37/12 ,  B24B37/32 ,  B24B41/007

摘要： A carrier head for chemical mechanical polishing, includes a base, a support structure attached to the base having a surface for contacting a substrate, and a retaining structure attached to the base to prevent the substrate from moving along the surface. The retaining structure and the surface define a cavity for receiving the substrate. The retaining structure includes an upper portion in contact with the base, a lower portion, and a vibration damper separating the upper portion and the lower portion. The vibration damper, the vibration damper includes a material that does not rebound to its original shape when subjected to a deformation.

摘要翻译： 用于化学机械抛光的载体头包括基底，附着到具有用于接触基底的表面的基部的支撑结构以及附接到基部的保持结构，以防止基底沿着表面移动。 保持结构和表面限定用于接收基底的空腔。 保持结构包括与基座接触的上部，下部和分隔上部和下部的振动阻尼器。 振动阻尼器，减震器包括当经受变形时不能反弹到其原始形状的材料。