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107 条记录 (耗时 0.038 秒)

    POWER SEMICONDUCTOR DEVICE
    71.
    发明申请
    POWER SEMICONDUCTOR DEVICE 有权
    功率半导体器件

    公开(公告)号：US20110260243A1

    公开(公告)日：2011-10-27

    申请号：US13052893

    申请日：2011-03-21

    申请人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Shunji Taniuchi ,  Miho Watanabe

    发明人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Shunji Taniuchi ,  Miho Watanabe

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/408 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66734 ,  H01L29/7811

    摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type, a fourth semiconductor layer, a fifth semiconductor layer, a first and second main electrode, a first and second insulating film and a control electrode. The second and third layers are provided periodically on the first layer. The fourth layer is provided on the third layer. The fifth layer is selectively provided on the fourth layer. The first film is provided on sidewalls of a trench that reaches from a surface of the fifth layer to the second layer. The second film is provided closer to a bottom side of the trench than the first film and has a higher permittivity than the first film. The control electrode is embedded in the trench.

    摘要翻译： 根据一个实施例，功率半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层和第二导电类型的第三半导体层，第四半导体层，第五半导体层， 第一和第二主电极，第一和第二绝缘膜和控制电极。 第二层和第三层周期性地设置在第一层上。 第四层设置在第三层上。 第五层选择性地设置在第四层上。 第一膜设置在从第五层的表面到第二层的沟槽的侧壁上。 第二膜比第一膜更靠近沟槽的底侧，并且具有比第一膜更高的介电常数。 控制电极嵌入沟槽中。

    Semiconductor device
    73.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07755138B2

    公开(公告)日：2010-07-13

    申请号：US12537219

    申请日：2009-08-06

    申请人： Wataru Saito ,  Syotaro Ono ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

    发明人： Wataru Saito ,  Syotaro Ono ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7806

    摘要： A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction.

    摘要翻译： 本发明的半导体器件包括：n型柱层和p型柱层的超结结构; 设置在p型支柱层上的基底层; 源层选择性地设置在基层的表面上; 设置在与所述基底层接触的部分上的栅极绝缘膜，与所述源极层接触的部分和在所述n型支柱的接合部的一部分上与所述n型支柱层接触的部分 层和p型支柱层; 控制电极，其通过所述栅极绝缘膜与所述基极层，所述源极层和所述n型支柱层相对设置; 以及与基极层，源极层和n型层电连接的源电极。 源电极与位于控制电极之间的n型支柱层的表面接触以形成肖特基结。

    Fluorescent lamp having visible and UV radiation
    74.
    发明授权
    Fluorescent lamp having visible and UV radiation 失效
    荧光灯具有可见光和紫外线辐射

    公开(公告)号：US5801483A

    公开(公告)日：1998-09-01

    申请号：US608496

    申请日：1996-02-28

    申请人： Miho Watanabe ,  Hisashi Honda ,  Keiji Hatakeyama ,  Yuichi Sakakiabra ,  Akiko Saitou

    发明人： Miho Watanabe ,  Hisashi Honda ,  Keiji Hatakeyama ,  Yuichi Sakakiabra ,  Akiko Saitou

    IPC分类号： A61L9/20 ,  H01J61/35 ,  H01J61/44 ,  H01J61/48 ,  H01J1/62

    CPC分类号： H01J61/48

    摘要： A fluorescent lamp includes a light-transmitting envelope, means for generating a discharge within envelope, a discharge sustaining fill contained in envelope for emitting ultraviolet rays during the lamp operation and a phosphor layer coated on an inner surface of envelope. The phosphor layer converts the ultraviolet rays into visible light and ultraviolet radiation within a wavelength range of 320 nm to 410 nm so as to have radiant flux ratio of ultraviolet radiation of 5 to 50 percent of the entire radiant flux of the lamp.

    摘要翻译： 荧光灯包括透光外壳，用于在外壳内产生放电的装置，包含在灯操作期间发射紫外线的外壳中的放电维持填充物和涂覆在外壳的内表面上的荧光体层。 荧光体层将紫外线转换成在320nm至410nm的波长范围内的可见光和紫外线辐射，以使紫外线的辐射通量比为灯的整个辐射通量的5％至50％。

    Fixing device, fixing method, and image forming apparatus for fixing a toner image using a first laser unit and a second laser unit
    77.
    发明授权
    Fixing device, fixing method, and image forming apparatus for fixing a toner image using a first laser unit and a second laser unit 有权
    固定装置，固定方法和图像形成装置，用于使用第一激光单元和第二激光单元固定调色剂图像

    公开(公告)号：US08406669B2

    公开(公告)日：2013-03-26

    申请号：US12726935

    申请日：2010-03-18

    申请人： Naoyuki Egusa ,  Makoto Furuki ,  Tetsuro Kodera ,  Miho Watanabe ,  Takashi Matsubara

    发明人： Naoyuki Egusa ,  Makoto Furuki ,  Tetsuro Kodera ,  Miho Watanabe ,  Takashi Matsubara

    IPC分类号： G03G15/20

    CPC分类号： G03G15/201

    摘要： According to an aspect of the invention, a fixing device includes a first laser unit and a second laser unit. The first laser unit outputs a first laser beam to irradiate a visible image formed of image forming material on a recording medium with the first laser beam. The second laser unit outputs a second laser beam to irradiate the visible image with the second laser beam after being irradiated with the first laser beam. The first laser beam and the second laser beam is configured to satisfy relations: W1 t2, W1 is an optical output per unit area of the first laser beam, W2 is an optical output per unit area of the second laser beam, t1 is an irradiation time per unit area of the first laser beam, and t2 is an irradiation time per unit area of the second laser beam.

    摘要翻译： 根据本发明的一个方面，定影装置包括第一激光单元和第二激光单元。 第一激光单元输出第一激光束，用第一激光束将由图像形成材料形成的可视图像照射在记录介质上。 第二激光单元输出第二激光束，以在用第一激光束照射之后用第二激光束照射可见图像。 第一激光束和第二激光束被配置为满足W1 t2的关系，W1是第一激光束的每单位面积的光输出，W2是第二激光束的每单位面积的光输出 t1是第一激光束的每单位面积的照射时间，t2是第二激光束的每单位面积的照射时间。

    SEMICONDUCTOR DEVICE
    79.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120217555A1

    公开(公告)日：2012-08-30

    申请号：US13357381

    申请日：2012-01-24

    申请人： Wataru SAITO ,  Syotaro Ono ,  Toshiyuki Naka ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    发明人： Wataru SAITO ,  Syotaro Ono ,  Toshiyuki Naka ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    IPC分类号： H01L29/772

    CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/42372 ,  H01L29/4238 ,  H01L29/7395

    摘要： A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

    摘要翻译： 实施例的第一半导体器件包括第一导电类型的第一半导体层，第一控制电极，引出电极，第二控制电极和第三控制电极。 第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层，第二导电类型的第三半导体层和第一导电类型的第四半导体层。 第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极，并且与提取电极下方的第二半导体层相对。 第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。 第二控制电极的电阻高于第三控制电极的电阻。

    Power semiconductor device
    80.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US08232593B2

    公开(公告)日：2012-07-31

    申请号：US12714002

    申请日：2010-02-26

    申请人： Wataru Saito ,  Syotaro Ono ,  Hiroshi Ohta ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    发明人： Wataru Saito ,  Syotaro Ono ,  Hiroshi Ohta ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    IPC分类号： H01L29/78 ,  H01L29/06

    CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/861 ,  H01L29/8611

    摘要： A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.

    摘要翻译： 根据本发明实施例的功率半导体器件包括第一或第二导电类型的第一半导体层，形成在第一半导体层上的第一导电类型的第二半导体层，第二导电类型的第三半导体层 选择性地形成在第二半导体层的表面上，形成在第二半导体层的表面上的第三半导体层的周边中的至少一个沟槽，至少一个沟槽的底表面的深度比底部 表面，并且比第一半导体层的顶表面浅，并且至少一个沟槽的一些或全部与第三半导体层的侧表面接触，至少一个绝缘体埋在第三半导体层 至少一个沟槽，与第一半导体层电连接的第一主电极和电连接的第二主电极 引导到第三半导体层。