公开(公告)号：US4788594A

公开(公告)日：1988-11-29

申请号：US918952

申请日：1986-10-15

申请人： Stanford R. Ovshinsky ,  Lawrence G. Norris

发明人： Stanford R. Ovshinsky ,  Lawrence G. Norris

IPC分类号： H01L27/146 ,  H04N5/225 ,  H04N3/14

CPC分类号： H04N5/335 ,  H01L27/14665 ,  H04N5/225

摘要： A thin film photosensor array for an electronic camera, said array adapted to provide an electrical signal corresponding to an image projected thereon. The photosensor array is preferably fabricated as a large area matrix of thin film, small area photosensitive elements capable of providing high resolution output in response to input from conventional camera optical systems. The photosensor array can be specifically tailored to provide color output or particular spectral sensitivity.

摘要翻译： 一种用于电子照相机的薄膜光电传感器阵列，所述阵列适于提供对应于投射在其上的图像的电信号。 优选地，光传感器阵列被制造为能够响应于常规照相机光学系统的输入而提供高分辨率输出的薄膜薄片小面积感光元件的大面积矩阵。 可以专门设计光传感器阵列以提供颜色输出或特定的光谱灵敏度。

公开(公告)号：US4769338A

公开(公告)日：1988-09-06

申请号：US23344

申请日：1987-03-09

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

IPC分类号： H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L29/161 ,  H01L29/78 ,  H01L29/786 ,  H01L27/04 ,  H01L29/54

CPC分类号： H01L27/1214 ,  H01L21/324 ,  H01L29/04 ,  H01L29/161 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78618 ,  H01L29/7866 ,  Y10S148/003 ,  Y10S148/122 ,  Y10S148/139 ,  Y10S148/15 ,  Y10S148/169

摘要： There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.

摘要翻译： 公开了一种可以以快速切换速率操作的电影场效应晶体管，例如用于视频显示应用中。 晶体管包括具有比无定形材料更有序的结构的硅半导体材料体，并且比单晶材料有序。 晶体管的源极和漏极包括形成在硅半导体材料体上的整流触点。 还公开了制造晶体管和利用该晶体管的电子可寻址阵列系统的方法。

公开(公告)号：US4753675A

公开(公告)日：1988-06-28

申请号：US920018

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David D. Allred ,  Gregory DeMaggio ,  Russell C. Custer

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David D. Allred ,  Gregory DeMaggio ,  Russell C. Custer

IPC分类号： B01J19/12 ,  B22F9/00 ,  B22F9/28 ,  H01F1/057 ,  H05B6/80 ,  C22B1/00

CPC分类号： H01F1/0571 ,  B01J19/126 ,  B22F9/004 ,  B22F9/28 ,  H05B6/80 ,  B01J2219/0894 ,  B01J2219/1227

摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by growing microwave powder or snow. The microwave powder or snow is grown by introducing a reaction gas comprised of precursor compounds of the magnetic material into a substantially enclosed reaction vessel. The reaction gas is energized by providing a source of microwave energy coupled to the substantially enclosed reaction vessel while maintaining the reaction gas pressure high enough to form the powdery microwave polymerizate, condensate, or precipitate, i.e., microwave snow. The solid particles of microwave snow have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the atomized solid particles are heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.

摘要翻译： 一种形成磁性材料的方法。 磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于9千字节的剩磁。 磁性材料通过两步固化，热处理工艺制备。 凝固过程是通过生长微波粉或雪来实现的。 通过将由磁性材料的前体化合物构成的反应气体引入基本上封闭的反应容器中来生长微波粉末或雪。 反应气体通过提供耦合到基本上封闭的反应容器的微波能量来激励，同时保持反应气体压力足够高以形成粉末微波聚合物，冷凝物或沉淀物，即微波雪。 微波雪的固体颗粒具有以下特征的形态：（i）无定形的一种或多种; （ii）微晶; 或（iii）多晶。 在该过程的这个阶段，固体颗粒的平均颗粒特征尺寸小于热处理的磁性材料的平均颗粒特征尺寸。 在该方法的第二阶段或热处理阶段中，雾化的固体颗粒被热处理以形成由晶界相遇的晶粒构成的固体材料。 晶粒和晶界具有磁性材料的形态。

公开(公告)号：US4715891A

公开(公告)日：1987-12-29

申请号：US919935

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David D. Allred ,  Gregory DeMaggio

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David D. Allred ,  Gregory DeMaggio

IPC分类号： H01F1/057 ,  H01F41/20 ,  H01F41/22 ,  H01F1/02

CPC分类号： H01F1/0574 ,  H01F1/0571 ,  H01F41/20 ,  H01F41/22

摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by : (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 9 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by controlled vaporization of precursor elements of the alloy into an inert atmosphere, with subsequent controlled vapor phase condensation. This may be accomplished by vaporizing a precursor type alloy in a plasma torch, such as an argon torch, a hydrogen torch, or other electro-arc torch to form a particulate fine grain alloy. The resulting product of this alternative method is a particulate fine grain alloy. The solid particles have a morphology characterized as being one or more of (i) amorphous; (ii) microcrystalline; or (iii) polycrystalline. The grains within the solid have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the fine grain solid particles are heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.

摘要翻译： 一种形成磁性材料的方法。 磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于9千字节的剩磁。 磁性材料通过两步固化，热处理工艺制备。 固化过程通过将合金的前体元素控制蒸发成惰性气氛来进行，随后控制气相冷凝。 这可以通过在诸如氩炬，氢炬或其它电弧炬的等离子体焰炬中蒸发前体型合金来实现，以形成颗粒细晶粒合金。 该替代方法的所得产物是颗粒细晶粒合金。 固体颗粒具有以下特征的形态：（i）无定形的一种或多种; （ii）微晶; 或（iii）多晶。 在该过程的这个阶段，固体颗粒的平均颗粒特征尺寸小于热处理的磁性材料的平均颗粒特征尺寸。 在该方法的第二阶段或热处理阶段中，细晶粒固体颗粒被热处理以形成由晶界相遇的晶粒组成的固体材料。 晶粒和晶界具有磁性材料的形态。

公开(公告)号：US4715890A

公开(公告)日：1987-12-29

申请号：US919934

申请日：1986-10-17

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David D. Allred ,  Gregory Demaggio

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  David D. Allred ,  Gregory Demaggio

IPC分类号： B22F9/24 ,  H01F1/057 ,  C22C1/04

CPC分类号： H01F1/0573 ,  B22F9/24

摘要： A method of forming a magnetic material. The magnetic material is a solid mass of grains, and has magnetic parameters characterized by: (1) a maximum magnetic energy product, (BH).sub.max, greater than 15 megagaussoersteds; and (2) a remanence greater than 8 kilogauss. The magnetic material is prepared by a two step solidification, heat treatment process. The solidification process is carried out by: (a) forming a solution of reducible precursor compounds of the magnetic material; and (b) thereafter reducing the reducible, precursor compounds and forming a precipitate thereof. The precipitate has a morphology characterized as being one or more of (i) amorphous, (ii) microcrystalline, or (iii) polycrystalline. The grains within the precipitate have, at this stage of the process, an average grain characteristic dimension less than that of the heat treated magnetic material. In the second, or heat treating, stage of the process, the precipitated solid is heat treated to form a solid material comprised of grains meeting at grain boundaries. The grains and grain boundaries have the morphology of the magnetic material.

摘要翻译： 一种形成磁性材料的方法。 磁性材料是固体颗粒，具有磁性参数，其特征在于：（1）最大磁能积（BH）max，大于15兆比特; 和（2）大于8千瓦的剩磁。 磁性材料通过两步固化，热处理工艺制备。 凝固过程通过以下步骤进行：（a）形成磁性材料的可还原的前体化合物溶液; 和（b）然后减少可还原的前体化合物并形成其沉淀物。 沉淀物具有表征为（i）无定形，（ii）微晶或（iii）多晶中的一种或多种的形态。 在该过程的这个阶段，沉淀物中的晶粒的平均晶粒特征尺寸小于热处理的磁性材料的平均晶粒特征尺寸。 在该方法的第二阶段或热处理阶段，对沉淀的固体进行热处理以形成由晶界相遇的晶粒组成的固体材料。 晶粒和晶界具有磁性材料的形态。

公开(公告)号：US4696758A

公开(公告)日：1987-09-29

申请号：US897236

申请日：1986-10-06

申请人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi Chung Yang ,  Jeffrey Fournier ,  James Kulman

发明人： Stanford R. Ovshinsky ,  Subhendu Guha ,  Prem Nath ,  Chi Chung Yang ,  Jeffrey Fournier ,  James Kulman

IPC分类号： H01L31/04 ,  H01L21/205 ,  C09K11/07

CPC分类号： H01L21/02422 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： Precursor gaseous mixtures from which to glow discharge deposit wide and narrow band gap semiconductor alloy material, said material characterized by improved photoconductivity and stability and improved resistance to photodegradation. There is also specifically disclosed a method of fabricating a narrow band gap semiconductor which method does not suffer from the effects of differential depletion of the components of the precursor gaseous mixture.

公开(公告)号：US4673957A

公开(公告)日：1987-06-16

申请号：US637435

申请日：1984-08-03

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens

IPC分类号： H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L29/161 ,  H01L29/78 ,  H01L29/786 ,  H01L29/54

CPC分类号： H01L21/324 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/161 ,  H01L29/66742 ,  H01L29/7839 ,  H01L29/78618 ,  H01L29/78684

摘要： There is disclosed integrated circuit compatible thin film field effect transistors which can be fabricated at low temperatures and operated at fast switching rates for use, for example, in video rate applications. The transistors include a silicon-germanium alloy body having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistors are rectifying contacts formed on or in the body. Also disclosed are a method of making the transistors and an electronically addressable array system utilizing the transistors to advantage.

摘要翻译： 公开了集成电路兼容的薄膜场效应晶体管，其可以在低温下制造并且以快速切换速率操作以用于例如视频速率应用。 晶体管包括硅 - 锗合金体，其具有比无定形材料更有序的结构，并且比单结晶材料有序。 晶体管的源极和漏极是形成在体内或体内的整流触点。 还公开了制造晶体管和利用晶体管的电子可寻址阵列系统的方法。

公开(公告)号：US4664937A

公开(公告)日：1987-05-12

申请号：US854247

申请日：1986-04-21

申请人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

发明人： Stanford R. Ovshinsky ,  David D. Allred ,  Lee Walter ,  Stephen J. Hudgens

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  C23C11/02

CPC分类号： H01J37/3222 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.

摘要翻译： 通过激活至少一组自由基并将所需的活化基团并入膜中而将半导体合金膜沉积到基底上的方法。

公开(公告)号：US4624902A

公开(公告)日：1986-11-25

申请号：US769857

申请日：1985-08-26

申请人： John P. deNeufville ,  Dalbir Rajoria ,  Stanford R. Ovshinsky

发明人： John P. deNeufville ,  Dalbir Rajoria ,  Stanford R. Ovshinsky

IPC分类号： H01M2/16 ,  H01M4/02 ,  H01M4/24 ,  H01M4/36 ,  H01M4/38 ,  H01M4/66 ,  H01M6/14 ,  H01M10/36

CPC分类号： H01M4/13 ,  H01M10/36 ,  H01M4/242 ,  H01M4/364 ,  H01M6/14 ,  H01M2/1673 ,  H01M2004/027 ,  H01M2300/0002 ,  H01M2300/0005 ,  H01M2300/0014 ,  H01M2300/0017 ,  H01M2300/002 ,  H01M2300/0025 ,  H01M2300/0048 ,  H01M4/383 ,  H01M4/661 ,  H01M4/663 ,  H01M4/669

摘要： The present invention provides a coating for electrodes for use in electrochemical cells having an electrochemically active species and an electrolyte. The coating includes a selectively permeable material which allows for the diffusion of the active species through the coating during operation of the cell while providing a substantially impervious barrier to the electrolyte. Electrodes utilizing the coatings described herein may be used in primary and secondary cells over a wide range of operating temperatures to deliver better electrochemical performance even at room temperature. Methods of making the coating and an apparatus for performing these methods on a continuous basis are included in the present invention. A novel composition of matter also is contemplated containing lithium, silicon, fluorine prepared by exposing lithium metal to SiF.sub.4.

摘要翻译： 本发明提供一种用于具有电化学活性物质和电解质的电化学电池的电极用涂层。 涂层包括选择性渗透材料，其允许活性物质在细胞操作期间通过涂层扩散，同时为电解质提供基本上不可渗透的屏障。 使用本文所述的涂层的电极可以在宽的工作温度范围内用于初级和次级电池中，以便甚至在室温下也能提供更好的电化学性能。 制造涂层的方法和连续进行这些方法的装置包括在本发明中。 还考虑了一种新颖的物质组合物，其包含通过将锂金属暴露于SiF 4而制备的锂，硅，氟。

公开(公告)号：US4597162A

公开(公告)日：1986-07-01

申请号：US785367

申请日：1985-10-07

申请人： Robert R. Johnson ,  Stanford R. Ovshinsky

发明人： Robert R. Johnson ,  Stanford R. Ovshinsky

IPC分类号： H01L27/24 ,  H01L45/00 ,  H01L21/46

CPC分类号： H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1213 ,  H01L45/1233 ,  H01L45/144

摘要： A method of making a parallel programmed electronic matrix array including the steps of forming at least one layer of a phase changeable material on a conductive substrate, wherein the phase changeable material has a substantially nonconductive state and a comparatively high conductive state. The layer is formed in one of the states. The method also includes irradiating selected areas of the layer to simultaneously convert the selected areas of the layer to the other one of the states to form selected substantially nonconductive layer portions and selected comparatively high conductive layer portions. Thereafter, in a preprogrammed embodiment, first and second sets of electrically conductive address lines are formed on respective opposite sides of the layer. The address lines of the first and second sets are formed for crossing at an angle to form a plurality of crossover points with the selected substantially nonconductive layer portions and the selected comparatively high conductive layer portions therebetween. In a field programmable array, the areas are irradiated through one set of lines.

摘要翻译： 一种制造并行编程电子矩阵阵列的方法，包括以下步骤：在导电基底上形成至少一层相变材料，其中所述相变材料具有基本非导电状态和较高导电状态。 该层形成于其中一个状态。 该方法还包括照射层的选定区域以同时将层的选定区域转换为另一种状态，以形成选定的基本上非导电层部分和选择的相对较高的导电层部分。 此后，在预编程实施例中，第一组和第二组导电地址线形成在该层的相应相对侧上。 第一组和第二组的地址线形成为以一定角度交叉以形成多个具有所选择的基本上非导电层部分的交叉点和其间选择的相对较高的导电层部分。 在现场可编程阵列中，通过一组线照射这些区域。