公开(公告)号：US20130341623A1

公开(公告)日：2013-12-26

申请号：US13527961

申请日：2012-06-20

申请人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Jeehwan Kim ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/1037

摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

摘要翻译： 感光体包括多层阻挡结构，以减少由导电基底电子注入的感光体的表面电压的暗放电。 多层阻挡结构包括与一个或多个窄带隙阻挡层交替顺序的宽带隙半导体层。 感光体的制造方法包括：以宽带隙半导体层交替排列形成阻挡结构的窄带隙阻挡层的转移掺杂。 使用该方法可以获得空穴或电子注入的抑制。

公开(公告)号：US08502347B1

公开(公告)日：2013-08-06

申请号：US13532323

申请日：2012-06-25

申请人： Bahman Hekmatshoartabari ,  Tak H. Ning ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Tak H. Ning ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/02

CPC分类号： H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7378

摘要： Bipolar junction transistors are provided in which at least one of an emitter contact, a base contact, or a collector contact thereof is formed by epitaxially growing a doped SixGe1-x layer, wherein x is 0≦x≦1, at a temperature of less than 500° C. The doped SixGe1-x layer comprises crystalline portions located on exposed surfaces of a crystalline semiconductor substrate and non-crystalline portions that are located on exposed surfaces of a passivation layer which can be formed and patterned on the crystalline semiconductor substrate. The doped SixGe1-x layer of the present disclosure, including the non-crystalline and crystalline portions, contains from 5 atomic percent to 40 atomic percent hydrogen.

公开(公告)号：US20130196486A1

公开(公告)日：2013-08-01

申请号：US13604963

申请日：2012-09-06

申请人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/20

CPC分类号： H01L27/12 ,  H01L29/1025 ,  H01L29/7781

摘要： Improved semiconductor substrates are provided that employ a wide bandgap material between the channel and the insulator. A semiconductor substrate comprises a channel layer comprised of a III-V material; an insulator layer; and a wide bandgap material between the channel layer and the insulator layer, wherein a conduction band offset (ΔE) between the channel layer and the wide bandgap material is between 0.05 eV and 0.8 eV. The channel layer can be comprised of, for example, In1−xGa,As or In1−xGa,Sb, with x varying from 0 to 1. The wide bandgap material can be comprised of, for example, In1−yAlyAs, In1−yAlyP, Al1−yGayAs or In1−yGayP, with y varying from 0 to 1.

摘要翻译： 提供了改进的半导体衬底，其在通道和绝缘体之间采用宽带隙材料。 半导体衬底包括由III-V材料构成的沟道层; 绝缘体层; 以及在沟道层和绝缘体层之间的宽带隙材料，其中沟道层和宽带隙材料之间的导带偏移（DeltaE）在0.05eV和0.8eV之间。 沟道层可以由例如In 1-x Ga，As或In 1-x Ga，Sb组成，x从0变化到1.宽带隙材料可以由例如In1-yAlyAs，In1-yAlyP ，Al1-yGayAs或In1-yGayP，y从0变化到1。

公开(公告)号：US08486797B1

公开(公告)日：2013-07-16

申请号：US13481048

申请日：2012-05-25

申请人： Bahman Hekmatshoartabari ,  Tak H. Ning ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoartabari ,  Tak H. Ning ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L21/44

CPC分类号： H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/66242 ,  H01L29/7378

摘要： Bipolar junction transistors are provided in which at least one of an emitter contact, a base contact, or a collector contact thereof is formed by epitaxially growing a doped SixGe1-x layer, wherein x is 0≦x≦1, at a temperature of less than 500° C. The doped SixGe1-x layer comprises crystalline portions located on exposed surfaces of a crystalline semiconductor substrate and non-crystalline portions that are located on exposed surfaces of a passivation layer which can be formed and patterned on the crystalline semiconductor substrate. The doped SixGe1-x layer of the present disclosure, including the non-crystalline and crystalline portions, contains from 5 atomic percent to 40 atomic percent hydrogen.

摘要翻译： 提供了双极结晶体管，其中通过在较低温度下外延生长掺杂的SixGe1-x层（其中x为0 @ x @）来形成发射极接触，基极接触或集电极接触中的至少一个 掺杂的SixGe1-x层包括位于结晶半导体衬底的暴露表面上的结晶部分和位于可在晶体半导体衬底上形成和图案化的钝化层的暴露表面上的非晶体部分。 本公开的掺杂的SixGe1-x层包括非晶态和结晶部分，含有5原子％至40原子％的氢。

公开(公告)号：US20120325304A1

公开(公告)日：2012-12-27

申请号：US13604198

申请日：2012-09-05

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/04

CPC分类号： H01L31/0747 ,  B82Y20/00 ,  H01L31/022441 ,  H01L31/035236 ,  H01L31/035254 ,  H01L31/0516 ,  Y02E10/50

摘要： A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

摘要翻译： 光电器件和方法包括耦合到衬底的第一侧上的发射极侧结构的衬底和与衬底的第一侧相对的一侧的背侧结构。 发射极侧结构或背面结构包括在宽带隙层和窄带隙层之间交替的层，以提供与衬底有效增加的带偏移和/或在单个材料接触上有效地更高的掺杂水平的多层接触。 发射极触点耦合到器件的光收集端部上的发射极侧结构。 背面接触件与与光收集端部相对的背面结构耦合。

公开(公告)号：US20120312361A1

公开(公告)日：2012-12-13

申请号：US13155996

申请日：2011-06-08

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/06 ,  H01L31/0224

CPC分类号： H01L31/0747 ,  H01L31/18 ,  Y02E10/50

摘要： A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type, and growing a doped amorphous or nanocrystalline passivation layer of a second conductivity type that is opposite to the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

摘要翻译： 一种形成光电器件的方法，包括提供具有第一导电类型的第一晶体半导体材料的吸收层，外延生长与第一导电类型相反的第二导电类型的第二晶体半导体层，以及生长掺杂非晶态 或与第一导电类型相反的第二导电类型的纳米晶体钝化层。 第一导电类型可以是p型，第二导电类型可以是n型，或者第一导电类型可以是n型，第二导电类型可以是p型。 外延生长第二晶体半导体层的温度不超过500℃。触点形成为与吸收层和第二晶体半导体层电连通。

公开(公告)号：US20120210932A1

公开(公告)日：2012-08-23

申请号：US13032866

申请日：2011-02-23

申请人： BAHMAN HEKMATSHOAR-TABARI ,  Ali Khakifirooz ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： BAHMAN HEKMATSHOAR-TABARI ,  Ali Khakifirooz ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： C30B25/02 ,  C30B25/10

CPC分类号： C30B25/04 ,  C30B25/105 ,  C30B25/14 ,  C30B25/183 ,  C30B25/186 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065

摘要： An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

摘要翻译： 外延生长方法包括提供衬底材料的暴露的结晶区域。 硅在低温工艺中外延沉积在衬底材料上，其中沉积温度低于500摄氏度。 源气体用稀释气体稀释，稀释气体与原料气体的气体比小于1000。

公开(公告)号：US10043934B2

公开(公告)日：2018-08-07

申请号：US13156009

申请日：2011-06-08

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/072 ,  H01L31/18 ,  H01L31/0747

摘要： A photovoltaic device is provided in which the tunneling barrier for hole collection at either the front contact or the back contact of a silicon heterojunction cell is reduced, without compromising the surface passivation either the front contact or at the back contact. This is achieved in the present disclosure by replacing the intrinsic and/or doped hydrogenated amorphous silicon (a-Si:H) layer(s) at the back contact or at the front contact with an intrinsic and/or doped layer(s) of a semiconductor material having a lower valence band-offset than that of a:Si—H with c-Si, and/or a higher activated doping concentration compared to that of doped hydrogenated amorphous Si. The higher level of activated doping is due to the higher doping efficiency of the back contact or front contact semiconductor material compared to that of amorphous Si, and/or modulation doping of the back or front contact semiconducting material. As a result, the tunneling barrier for hole collection is reduced and the cell efficiency is improved accordingly.

公开(公告)号：US10011920B2

公开(公告)日：2018-07-03

申请号：US13032866

申请日：2011-02-23

申请人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Ali Khakifirooz ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： C30B25/04 ,  C30B25/10 ,  C30B25/14 ,  C30B29/06 ,  C30B25/18 ,  C30B33/12 ,  H01L21/02 ,  H01L21/3065

CPC分类号： C30B25/04 ,  C30B25/105 ,  C30B25/14 ,  C30B25/183 ,  C30B25/186 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065

摘要： An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

公开(公告)号：US09246033B2

公开(公告)日：2016-01-26

申请号：US13604198

申请日：2012-09-05

申请人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/028 ,  H01L31/0352 ,  H01L31/0747 ,  B82Y20/00

CPC分类号： H01L31/0747 ,  B82Y20/00 ,  H01L31/022441 ,  H01L31/035236 ,  H01L31/035254 ,  H01L31/0516 ,  Y02E10/50

摘要： A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

摘要翻译： 光电器件和方法包括耦合到衬底的第一侧上的发射极侧结构的衬底和与衬底的第一侧相对的一侧的背侧结构。 发射极侧结构或背面结构包括在宽带隙层和窄带隙层之间交替的层，以提供与衬底有效增加的带偏移和/或在单个材料接触上有效地更高的掺杂水平的多层接触。 发射极触点耦合到器件的光收集端部上的发射极侧结构。 背面接触件与与光收集端部相对的背面结构耦合。