公开(公告)号：US06577328B2

公开(公告)日：2003-06-10

申请号：US09084183

申请日：1998-05-26

申请人： Koichi Matsuda ,  Hiroyuki Hanaya

发明人： Koichi Matsuda ,  Hiroyuki Hanaya

IPC分类号： G09G500

CPC分类号： A63F13/58 ,  A63F13/12 ,  A63F13/31 ,  A63F13/335 ,  A63F13/35 ,  A63F13/825 ,  A63F13/87 ,  A63F2300/402 ,  A63F2300/407 ,  A63F2300/6009 ,  A63F2300/8058 ,  G06F17/30873

摘要： To remotely control a virtual reality creature. A shared server provides a shared virtual reality space to client PCs. An AO server controls a growth parameter of the virtual life object existing in this shared virtual reality space to control autonomous behavior of the virtual life object. A communication server sends a message to a user of each of the client PCs who is the keeper of the virtual life object according to a status transition thereof through telephone or facsimile for example.

摘要翻译： 遥控虚拟现实生物。 共享服务器为客户端PC提供共享的虚拟现实空间。 AO服务器控制存在于该共享虚拟现实空间中的虚拟生活对象的增长参数以控制虚拟生活对象的自主行为。 通信服务器根据其通过电话或传真的状态转换，向作为虚拟生活对象的保持者的每个客户PC的用户发送消息。

公开(公告)号：US5324364A

公开(公告)日：1994-06-28

申请号：US45176

申请日：1993-04-13

申请人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

发明人： Koichi Matsuda ,  Masafumi Sano ,  Tsutomu Murakami

IPC分类号： H01L31/04 ,  H01L31/0376 ,  H01L31/075

CPC分类号： H01L31/076 ,  H01L31/03765 ,  H01L31/065 ,  H01L31/075 ,  Y02E10/548

摘要： A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer comprising a non-single crystalline silicon semiconductor material substantially free of germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

摘要翻译： 一种pin结光电器件，包括衬底和设置在所述衬底上的pin结半导体有源层区域，所述pin结半导体有源层区域包括由p型非单晶半导体材料构成的p型半导体层，i 由n型非单晶半导体材料构成的n型半导体层以及由n型非单晶半导体材料构成的n型半导体层，其特征在于，（a） 基本上不含锗原子的单晶硅半导体材料介于所述p型半导体层和所述i型半导体层之间，（b）包含基本上不含锗原子的非单晶硅半导体材料的缓冲层介于 所述i型半导体层和所述n型半导体层，并且所述i型半导体层形成为o f是在锗原子在厚度方向上的浓度分布同时提供最大浓度点的整个区域中含有锗原子的含量为20至70原子％的非晶硅锗半导体材料。

公开(公告)号：US5190838A

公开(公告)日：1993-03-02

申请号：US572354

申请日：1990-08-27

申请人： Keishi Saitoh ,  Masafumi Sano ,  Koichi Matsuda

发明人： Keishi Saitoh ,  Masafumi Sano ,  Koichi Matsuda

IPC分类号： G03G5/082

CPC分类号： G03G5/08214 ,  G03G5/08221 ,  G03G5/08235

摘要： An electrophotographic image-forming member which comprises a substrate for electrophotography and a light receiving layer being disposed on said substrate, said light receiving layer comprising a photoconductive layer formed of a non-single-crystal silicon carbide film containing silicon atoms as a matrix, carbon atoms in an amount of 5 to 15 atomic % and hydrogen atoms in an amount of 1 to 10 atomic %, containing graphite structure domains in a proportion of 1% or less per unit volume and having an intensity ratio of 0.01 to 0.05 between the C--H bond stretching mode and the Si--H bond stretching mode in an infrared adsorption spectrum.The light receiving layer may further comprise a charge injection inhibition layer or/and a surface layer.The electrophotographic image-forming member can be used in a high-speed continuous electrophotographic copying systems using a coherent light laser beam as the light source without accompaniment of the problems which are found on conventional amorphous silicon carbide system electrophotographic image-forming members.

摘要翻译： 一种电子照相图像形成部件，包括用于电子照相的基板和设置在所述基板上的受光层，所述光接收层包括由含有硅原子作为基体的非单晶碳化硅膜形成的光电导层，碳 原子数为5〜15原子％，氢原子为1〜10原子％，含有比例为1％以下的石墨结构域，单位体积的重量比为0.01〜0.05，CH 键拉伸模式和Si-H键拉伸模式在红外吸收光谱中。 光接收层还可以包括电荷注入抑制层或/和表面层。 电子照相图像形成构件可以用于使用相干光激光束作为光源的高速连续电子照相复印系统，而不伴随在常规非晶碳化硅系统电子照相成像构件上发现的问题。

公开(公告)号：US5024706A

公开(公告)日：1991-06-18

申请号：US467523

申请日：1990-01-19

申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

IPC分类号： H01L31/04 ,  H01L21/205 ,  H01L31/0304 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0304 ,  H01L31/03042 ,  H01L31/075 ,  H01L31/184 ,  H01L31/20 ,  Y02E10/544 ,  Y02E10/548

摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of aluminum atoms (Al), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the range of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; said i-type comprises a either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由铝原子（Al），磷原子（P），氢原子（H），任选的氟原子（F）和p型或n型掺杂元素的原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子， 或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 的选自氢原子（H）和氟原子（F）的原子。

公开(公告)号：US5006180A

公开(公告)日：1991-04-09

申请号：US467538

申请日：1990-01-19

申请人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

发明人： Masahiro Kanai ,  Tatsuyuki Aoike ,  Koichi Matsuda ,  Soichiro Kawakami

IPC分类号： H01L31/04 ,  H01L21/205 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A pin heterojunction photovoltaic element which generates photoelectromotive force by the junction of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said p-type and n-type semiconductor layers comprises a polycrystal semiconductor film comprised of gallium atoms (Ga), phosphorus atoms (P), hydrogen atoms (H), optionally fluorine atoms (F), and atoms (M) of a p-type or n-type dopant element, said polycrystal semiconductor film contains crystal grains of an average size in the rage of 50 to 1000 .ANG., and said polycrystal semiconductor film contains the hydrogen atoms (H) in an amount of 0.5 to 5 atomic %; and said i-type comprises either (a) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F) or (b) a non-single crystal semiconductor film containing silicon atoms (Si) as a matrix, at least one kind of atoms selected from the group consisting of carbon atoms (C) and germanium atoms (Ge), and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and fluorine atoms (F).

摘要翻译： 一种由p型半导体层，i型半导体层和n型半导体层的接合产生光电动势的pin异质结光电元件，其特征在于，所述p型和n型半导体中的至少一种 层包括由p型或n型掺杂元素的镓原子（Ga），磷原子（P），氢原子（H），任选的氟原子（F）和原子（M）组成的多晶半导体膜， 所述多晶半导体膜含有平均尺寸在50〜1000范围内的晶粒，所述多晶半导体膜含有0.5〜5原子％的氢原子（H）; 并且所述i型包括（a）以硅原子（Si）为基质的非单晶半导体膜和选自氢原子（H）和氟原子（F）中的至少一种原子， 或（b）含有硅原子（Si）作为基体的非单晶半导体膜，选自碳原子（C）和锗原子（Ge）中的至少一种原子，以及至少一种 的选自氢原子（H）和氟原子（F）的原子。

公开(公告)号：US4795723A

公开(公告)日：1989-01-03

申请号：US016366

申请日：1987-02-19

申请人： Hiroshi Nishikawa ,  Koichi Matsuda ,  Masami Nakashima

发明人： Hiroshi Nishikawa ,  Koichi Matsuda ,  Masami Nakashima

IPC分类号： C04B35/58 ,  C04B35/583 ,  C23C14/24

CPC分类号： C04B35/58071 ,  C04B35/583 ,  C04B35/645 ,  C23C14/243

摘要： An electrically conductive hot press sintered ceramic product comprising boron nitride, titanium diboride and aluminum nitride and having a flexural strength of at least 900 kg/cm.sup.2, a specific resistance of from 300 to less than 2,500 .mu..OMEGA.cm and less anisotropy.

摘要翻译： 一种导电热压烧结陶瓷产品，其包含氮化硼，二硼化钛和氮化铝，其弯曲强度为至少900kg / cm 2，电阻率为300至小于2,500μ欧姆/ cm，具有较小的各向异性。

公开(公告)号：US4746455A

公开(公告)日：1988-05-24

申请号：US64706

申请日：1987-06-22

申请人： Koichi Matsuda ,  Atsuo Nakae ,  Moriyasu Murata ,  Akira Suzuki

发明人： Koichi Matsuda ,  Atsuo Nakae ,  Moriyasu Murata ,  Akira Suzuki

IPC分类号： C11D3/37

CPC分类号： C11D3/3703 ,  C11D3/3773

摘要： A novel liquid detergent composition for clothing articles comprising from 0.01 to 10 wt % of an organic polymer, which has a specific particle size, in the form of a polymer latex.The detergent composition has a good shrink resistance for felt.

摘要翻译： 一种用于服装制品的新型液体洗涤剂组合物，其包含0.01至10重量％的具有特定粒径的聚合物胶乳形式的有机聚合物。 洗涤剂组合物对于毡具有良好的抗收缩性。

公开(公告)号：US4635890A

公开(公告)日：1987-01-13

申请号：US657817

申请日：1984-10-05

申请人： Koichi Matsuda ,  Nobuaki Kondo ,  Yuji Tanaka

发明人： Koichi Matsuda ,  Nobuaki Kondo ,  Yuji Tanaka

IPC分类号： B60N2/06 ,  B60N2/07 ,  B60N2/08 ,  F16M13/00

CPC分类号： B60N2/0887 ,  B60N2/0705 ,  B60N2/0707 ,  B60N2/0715 ,  B60N2/072 ,  B60N2/0747 ,  B60N2/0825 ,  B60N2/0843 ,  B60N2/0856

摘要： A seat is mounted on right and left slide rails slidable on right and left guide rails so that the position of the seat is adjustable back and forth. Right and left lock mechanisms are mounted on the right and left slide rails, respectively, for locking a relative movement between a right or left pair of the slide and guide rails. A handle bar is connected with the left lock mechanism, for example, and extends forwardly so that the left lock mechanism is unlocked with the handle bar. The motion of the handle bar for unlocking the left lock mechanism is transmitted through a release wire and link mechanism to the right lock mechanism to unlock the right lock mechanism together. The release wire extends from the handle bar adjacent the left slide rail to the right slide rail near the front of the seat. The link means extends backwardly along the right slide rail from the end of the release wire to the right lock mechanism. The link means makes it possible to displace the position of the right end of the release wire toward the front of the seat.

摘要翻译： 一个座椅安装在左右导轨上滑动的左右滑轨上，座椅的位置可以来回调节。 右和左锁定机构分别安装在左右滑轨上，用于锁定左右一对滑轨和导轨之间的相对移动。 把手杆例如与左锁定机构连接，并且向前延伸，从而左锁定机构用手柄解锁。 用于解锁左锁定机构的手柄的运动通过释放线和连杆机构传递到右锁定机构，以将右锁定机构解锁在一起。 释放线从邻近左滑轨的手柄延伸到靠近座椅前部的右滑轨。 连杆装置沿着右滑轨从释放线的端部向右延伸到右锁定机构。 连杆装置使得能够将释放线的右端的位置朝向座椅的前部移位。