公开(公告)号：US20090212277A1

公开(公告)日：2009-08-27

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15 <= X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US07939354B2

公开(公告)日：2011-05-10

申请号：US12396858

申请日：2009-03-03

申请人： Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi

发明人： Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S2304/12

摘要： A method of fabricating a nitride semiconductor laser comprises preparing a substrate having a plurality of marker structures and a crystalline mass made of a hexagonal gallium nitride semiconductor. The primary and back surfaces of the substrate intersect with a predetermined axis extending in the direction of a c-axis of the hexagonal gallium nitride semiconductor. Each marker structure extends along a reference plane defined by the c-axis and an m-axis of the hexagonal gallium nitride semiconductor. The method comprises cutting the substrate along a cutting plane to form a wafer of hexagonal gallium nitride semiconductor, and the cutting plane intersects with the plurality of the marker structures. The wafer has a plurality of first markers, each of which extends from the primary surface to the back surface of the wafer, and each of the first markers comprises part of each of the marker structures. The primary surface of the wafer is semipolar or nonpolar. The method comprises growing a number of gallium nitride based semiconductor layers for a semiconductor laser. The method comprises cleaving the substrate product at a cleavage plane of the hexagonal gallium nitride semiconductor, after forming a substrate product in an electrode forming step.

摘要翻译： 一种制造氮化物半导体激光器的方法包括制备具有多个标记结构的基板和由六方晶系氮化镓半导体制成的晶体。 基板的主表面和背面与沿六方晶系氮化镓半导体的c轴方向延伸的规定轴相交。 每个标记结构沿着由六方晶系氮化镓半导体的c轴和m轴限定的参考平面延伸。 该方法包括沿着切割平面切割基板以形成六方晶系氮化镓半导体晶片，切割平面与多个标记结构相交。 晶片具有多个第一标记，每个第一标记从晶片的主表面延伸到后表面，并且每个第一标记包括每个标记结构的一部分。 晶圆的主表面是半极性或非极性。 该方法包括生长用于半导体激光器的多个氮化镓基半导体层。 该方法包括在电极形成步骤中形成衬底产物之后，在六方晶系氮化镓半导体的解理面处切割衬底产物。

公开(公告)号：US20080308815A1

公开(公告)日：2008-12-18

申请号：US12138441

申请日：2008-06-13

申请人： Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Katsushi Akita ,  Takashi Kyono ,  Yoshiki Miura

发明人： Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Katsushi Akita ,  Takashi Kyono ,  Yoshiki Miura

IPC分类号： H01L29/20 ,  B23B9/00 ,  H01L21/205

CPC分类号： C30B25/02 ,  C23C16/01 ,  C23C16/303 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639

摘要： Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions.

摘要翻译： 提供可以制造增强发光效率的发光等半导体器件的GaN衬底，其中在GaN衬底主表面上形成外延层的外延衬底，半导体器件和制造方法 GaN衬底。 GaN衬底是具有相对于其法线向量的主表面的衬底，[0001]面取向在两个不同的偏轴方向上倾斜。

公开(公告)号：US07973322B2

公开(公告)日：2011-07-05

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US07968864B2

公开(公告)日：2011-06-28

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15＆nlE; X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US20100059759A1

公开(公告)日：2010-03-11

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US07547910B2

公开(公告)日：2009-06-16

申请号：US11863220

申请日：2007-09-27

申请人： Katsushi Akita ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Hiroyuki Kitabayashi ,  Koji Katayama

发明人： Katsushi Akita ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Hiroyuki Kitabayashi ,  Koji Katayama

IPC分类号： H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm−2 or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0

摘要翻译： 提供了即使在高电流密度下也减小了外部量子效率的半导体发光器件。 在半导体发光装置（11）中，氮化镓覆层（13）的穿透位错密度为1×10 17 cm -2以下。 有源区（17）具有由多个阱层（19）和多个势垒层（21）组成的量子阱结构（17a），并且量子阱结构（17a）被设置为发射具有 在420nm至490nm的波长范围内的峰值波长。 阱层（19）各自包括未掺杂的InXGa1-XN（0

公开(公告)号：US20090026440A1

公开(公告)日：2009-01-29

申请号：US11659002

申请日：2006-04-25

申请人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

发明人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10−20 J nor more than 4.8×10−20 J.

摘要翻译： 氮化物半导体发光元件11是用于产生包含紫外线区域中的波长分量的光的氮化物半导体发光元件。 氮化物半导体发光元件11具有InX1AlY1Ga1-X1-Y1N阱层13（1> X1> 0和Y1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层15（1> X2> 0）的有源区17 和1> Y2> 0）。 InX1AlY1Ga1-X1-Y1N阱层13和InX2AlY2Ga1-X2-Y2N势垒层15之间的能隙差Eg1不小于2.4×10-20J，也不大于4.8×10-20JJ。

公开(公告)号：US08071986B2

公开(公告)日：2011-12-06

申请号：US11659002

申请日：2006-04-25

申请人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

发明人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10−20 J nor more than 4.8×10−20 J.

摘要翻译： 氮化物半导体发光元件11是用于产生包含紫外线区域中的波长分量的光的氮化物半导体发光元件。 氮化物半导体发光元件11具有InX1AlY1Ga1-X1-Y1N阱层13（1> X1> 0和Y1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层15（1> X2> 0）的有源区17 和1> Y2> 0）。 InX1AlY1Ga1-X1-Y1N阱层13和InX2AlY2Ga1-X2-Y2N势垒层15之间的能隙差Eg1不小于2.4×10-20J，也不大于4.8×10-20J。

公开(公告)号：US07949026B2

公开(公告)日：2011-05-24

申请号：US12600300

申请日：2009-02-17

申请人： Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi

发明人： Takashi Kyono ,  Katsushi Akita ,  Yusuke Yoshizumi

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/3407 ,  H01S2304/04

摘要： A group III nitride semiconductor laser is provided that has a good optical confinement property and includes an InGaN well layer having good crystal quality.An active layer 19 is provided between a first optical guiding layer 21 and a second optical guiding layer 23. The active layer 19 can include well layers 27a, 27b, and 27c and further includes at least one first barrier layer 29a provided between the well layers. The first and second optical guiding layers 21 and 23 respectively include first and second InGaN regions 21a and 23a smaller than the band gap E29 of the first barrier layer 29a, and hence the average refractive index nGUIDE of the first and second optical guiding layers 21 and 23 can be made larger than the refractive index n29 of the first barrier layer 29a. Thus, good optical confinement is achieved. The band gap E29 of the first barrier layer 29a is larger than the band gaps E21 and E23 of the first and second InGaN regions 21a and 23a.

摘要翻译： 提供具有良好的光学限制特性的III族氮化物半导体激光器，并且包括具有良好晶体质量的InGaN阱层。 有源层19设置在第一光引导层21和第二光引导层23之间。有源层19可以包括阱层27a，27b和27c，并且还包括设置在阱层之间的至少一个第一势垒层29a 。 第一和第二光导层21和23分别包括比第一阻挡层29a的带隙E29小的第一和第二InGaN区21a和23a，并且因此包括第一和第二光导层21的平均折射率nGUIDE和 23可以被制成大于第一阻挡层29a的折射率n29。 因此，实现良好的光学约束。 第一阻挡层29a的带隙E29大于第一和第二InGaN区域21a和23a的带隙E21和E23。