公开(公告)号：US07718548B2

公开(公告)日：2010-05-18

申请号：US11950691

申请日：2007-12-05

申请人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/469

CPC分类号： H01L21/76856 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867

摘要： A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

摘要翻译： 描述了在半导体晶片上的铜表面上形成铜 - 氮化硅层的工艺。 该方法可以包括将晶片暴露于由氦制成的第一等离子体的步骤。 该方法还可以包括将晶片暴露于由还原气体制成的第二等离子体，其中第二等离子体从铜表面去除氧化铜，并将晶片暴露于硅烷，硅烷与铜表面反应以选择性地形成硅化铜 。 该方法还可以包括将晶片暴露于由氨和分子氮制成的第三等离子体，以形成铜氮化硅层。

公开(公告)号：US20080213997A1

公开(公告)日：2008-09-04

申请号：US11950691

申请日：2007-12-05

申请人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Sang M. Lee ,  Vladimir Zubkov ,  Zhenijiang Cui ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/768

CPC分类号： H01L21/76856 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867

摘要： A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.

摘要翻译： 描述了在半导体晶片上的铜表面上形成铜 - 氮化硅层的工艺。 该方法可以包括将晶片暴露于由氦制成的第一等离子体的步骤。 该方法还可以包括将晶片暴露于由还原气体制成的第二等离子体，其中第二等离子体从铜表面去除氧化铜，并将晶片暴露于硅烷，硅烷与铜表面反应以选择性地形成硅化铜 。 该方法还可以包括将晶片暴露于由氨和分子氮制成的第三等离子体，以形成铜氮化硅层。

公开(公告)号：US08658242B2

公开(公告)日：2014-02-25

申请号：US13193539

申请日：2011-07-28

申请人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

发明人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC分类号： B05D5/12

CPC分类号： G11B5/85 ,  G11B5/743 ,  G11B5/855

摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

摘要翻译： 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基底上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US20120196155A1

公开(公告)日：2012-08-02

申请号：US13193539

申请日：2011-07-28

申请人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

发明人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC分类号： G11B5/64 ,  C23C16/50 ,  C23C16/04 ,  B05D5/00 ,  B82Y10/00

CPC分类号： G11B5/85 ,  G11B5/743 ,  G11B5/855

摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

摘要翻译： 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基板上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US20120164829A1

公开(公告)日：2012-06-28

申请号：US12977060

申请日：2010-12-22

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/28

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

摘要翻译： 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：US20060093756A1

公开(公告)日：2006-05-04

申请号：US10981430

申请日：2004-11-03

申请人： Nagarajan Rajagopalan ,  Li-Qun Xia ,  Mihaela Balseanu ,  Thomas Nowak ,  Ranjana Shah ,  Huiwen Xu ,  Chad Peterson ,  Derek Witty ,  Hichem M'Saad

发明人： Nagarajan Rajagopalan ,  Li-Qun Xia ,  Mihaela Balseanu ,  Thomas Nowak ,  Ranjana Shah ,  Huiwen Xu ,  Chad Peterson ,  Derek Witty ,  Hichem M'Saad

IPC分类号： B05D1/36

CPC分类号： C23C16/4405 ,  C23C16/4404 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/3121 ,  H01L21/31633

摘要： A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.

摘要翻译： 一种用于调节沉积室的方法，其中在将有机硅材料沉积在基底上之前，室部件和壁被不含碳的材料致密地涂覆。 可以在其间沉积任选的含碳层。 提供了使用低能量等离子体和低压以从内部室表面除去残余物的室清洁方法，并且可以与调味过程组合。

公开(公告)号：US08283237B2

公开(公告)日：2012-10-09

申请号：US12978129

申请日：2010-12-23

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/30 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

摘要翻译： 通过硅通孔的制造方法包括通过使用其间的粘合剂层将硅板的前表面粘合到载体上来形成基板，以暴露硅板的背面。 氮化硅钝化层沉积在衬底的硅板的暴露的背面上。 在硅板中蚀刻多个通孔，通孔包括侧壁和底壁。 金属导体沉积在通孔中以形成多个通硅通孔。

公开(公告)号：US08329575B2

公开(公告)日：2012-12-11

申请号：US12977060

申请日：2010-12-22

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

摘要翻译： 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：US20140273524A1

公开(公告)日：2014-09-18

申请号：US14204490

申请日：2014-03-11

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Ning Li ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Ning Li ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

IPC分类号： H01L21/02

CPC分类号： H01L21/02321 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31155

摘要： Provided are methods for the deposition and doping of films comprising Si. Certain methods involve depositing a SiN, SiO, SiON, SiC or SiCN film and doping the Si-containing film with one or more of C, B, O, N and Ge by a plasma implantation process. Such doped Si-containing films may have improved properties such as reduced etch rate in acid-based clean solutions, reduced dielectric constant and/or improved dielectric strength.

摘要翻译： 提供了用于沉积和掺杂包含Si的膜的方法。 某些方法包括沉积SiN，SiO，SiON，SiC或SiCN膜，并通过等离子体注入工艺将C，B，O，N和Ge中的一种或多种掺杂到含Si薄膜。 这种掺杂的含Si薄膜可具有改进的性能，例如在酸基清洁溶液中降低的蚀刻速率，降低的介电常数和/或改善的介电强度。

公开(公告)号：US20130192524A1

公开(公告)日：2013-08-01

申请号：US13755891

申请日：2013-01-31

申请人： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

发明人： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

IPC分类号： H01L21/673

CPC分类号： H01L21/673 ,  C23C16/45546 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67346 ,  H01L21/677

摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

摘要翻译： 提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。 可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。 输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。 处理室可以是多室衬底处理系统的一部分。