公开(公告)号：US20090307589A1

公开(公告)日：2009-12-10

申请号：US12469056

申请日：2009-05-20

申请人： Tsutomu Inose ,  Hiroyuki Nagai

发明人： Tsutomu Inose ,  Hiroyuki Nagai

IPC分类号： G06F3/041

CPC分类号： G06F3/04883 ,  G06F3/04845 ,  G06F3/0486 ,  G06F2203/04808

摘要： In a user interface that can identify concurrent pointing at a plurality of given positions on a screen, after detecting that a plurality of pointed positions are concurrently present in a display range of one object on a screen, whether or not an operation of moving the other pointed positions is performed, while keeping at least one pointed position among the plurality of pointed positions, is determined. Then, if it is determined that this operation is performed, the processing that is to be executed is decided based on the number of kept pointed positions and the number of moved pointed positions, and the decided process is executed on the object.

摘要翻译： 在可以识别在屏幕上的多个给定位置处的并发指向的用户界面中，在检测到多个指向位置同时存在于屏幕上的一个对象的显示范围中时，是否移动另一个对象的操作 确定在多个指向位置之间保持至少一个指向位置的指示位置。 然后，如果确定执行该操作，则基于所保持的指示位置的数量和移动的指定位置的数量来确定要执行的处理，并且对对象执行所决定的处理。

公开(公告)号：US07629851B2

公开(公告)日：2009-12-08

申请号：US12234833

申请日：2008-09-22

申请人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

发明人： Hirokazu Tsurumaki ,  Hiroyuki Nagai ,  Tomio Furuya ,  Makoto Ishikawa

IPC分类号： H03G3/10

CPC分类号： H03G1/0005 ,  H03F1/301 ,  H03F2200/294 ,  H03F2200/372 ,  H03G2201/103 ,  H03G2201/206 ,  H03G2201/307 ,  H03G2201/40

摘要： In a high frequency power amplifier circuit that supplies a bias to an amplifying FET by a current mirror method, scattering of a threshold voltage Vth due to the scattering of the channel impurity concentration of the FET, and a shift of a bias point caused by the scattering of the threshold voltage Vth and a channel length modulation coefficient λ due to a short channel effect are corrected automatically. The scattering of a high frequency power amplifying characteristic can be reduced as a result.

摘要翻译： 在通过电流镜法向放大FET提供偏置的高频功率放大器电路中，由于FET的沟道杂质浓度的散射引起的阈值电压Vth的散射和由 自动校正阈值电压Vth的散射和由于短通道效应引起的通道长度调制系数λ。 结果可以降低高频功率放大特性的散射。

公开(公告)号：US07574477B2

公开(公告)日：2009-08-11

申请号：US10739909

申请日：2003-12-18

申请人： Hiroyuki Nagai

发明人： Hiroyuki Nagai

IPC分类号： G06F15/16 ,  G06F15/173 ,  G06F15/177

CPC分类号： H04L63/08 ,  G06Q10/107 ,  H04L51/12

摘要： There is provided an electronic mail distributing apparatus which can prevent attacks by repeated subscription. E-mail addresses as destinations of e-mails to be distributed are stored in a first database, and e-mail addresses to which e-mail distribution is rejected are stored in a second database. If the received e-mail address is not stored in the second database, it is registered in the first database, but if not, authentication information is requested from an external apparatus to carry out an authenticating process on the received e-mail address. The e-mail address is registered in the first database when the authentication is successful, whereas the registration of the e-mail address in the first database is rejected when the authentication is unsuccessful.

摘要翻译： 提供了一种可以通过重复订阅来防止攻击的电子邮件分发装置。 作为要分发的电子邮件的目的地的电子邮件地址存储在第一数据库中，并且将电子邮件分发被拒绝的电子邮件地址存储在第二数据库中。 如果接收到的电子邮件地址未被存储在第二数据库中，则将其注册在第一数据库中，但是如果不是，则从外部设备请求认证信息对接收到的电子邮件地址进行认证处理。 当认证成功时，电子邮件地址被注册在第一个数据库中，而当认证失败时，第一个数据库中的电子邮件地址的注册被拒绝。

公开(公告)号：US07501896B2

公开(公告)日：2009-03-10

申请号：US11822183

申请日：2007-07-03

申请人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

发明人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

IPC分类号： H03F3/04

CPC分类号： H01L27/0629 ,  H01L2223/6644 ,  H01L2223/665 ,  H03F1/301 ,  H03F3/195

摘要： A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics is reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.

摘要翻译： 高频功率放大器电子部件（RF功率模块）被构造成以当前反射镜配置向放大器FET施加偏压。 在该RF功率模块中，由于FET的短沟道效应导致​​的偏置点的偏差被校正，并且降低了高频功率放大器特性的变化。 高频功率放大器电路（RF功率模块）被构造成使得高频功率放大器电路中的放大器晶体管的偏置电压以与当前反射镜配置的放大器晶体管连接的偏置晶体管提供。 除了与放大器晶体管的控制端子连接的焊盘（外部端子）之外，还提供了第二焊盘，其以与电流镜配置的放大器晶体管连接的偏置晶体管的控制端子连接。

公开(公告)号：US20080230375A1

公开(公告)日：2008-09-25

申请号：US12072089

申请日：2008-02-22

申请人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

发明人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

IPC分类号： C23C14/34 ,  C23C14/54

CPC分类号： C23C14/185 ,  C23C14/027 ,  C23C14/345 ,  C23C14/544 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.

摘要翻译： 本发明的目的是提供一种能够在一个处理容器中通过溅射在物体上容易地形成含有添加金属的合金层以在厚度方向上提供浓度梯度的技术。 也就是说，本发明可以形成具有所需浓度的膜，并且包括第一成膜工艺和第二成膜工艺，其改变处理容器中的压力和电功率中的至少一个，使得它们不同 从第一成膜工序，使添加剂金属的浓度与第一合金膜的添加金属的浓度不同。

公开(公告)号：US20080191806A1

公开(公告)日：2008-08-14

申请号：US11822183

申请日：2007-07-03

申请人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

发明人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

IPC分类号： H03F3/04

CPC分类号： H01L27/0629 ,  H01L2223/6644 ,  H01L2223/665 ,  H03F1/301 ,  H03F3/195

摘要： A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics is reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.

摘要翻译： 高频功率放大器电子部件（RF功率模块）被构造成以当前反射镜配置向放大器FET施加偏压。 在该RF功率模块中，由于FET的短沟道效应导致​​的偏置点的偏差被校正，并且降低了高频功率放大器特性的变化。 高频功率放大器电路（RF功率模块）被构造成使得高频功率放大器电路中的放大器晶体管的偏置电压以与当前反射镜配置的放大器晶体管连接的偏置晶体管提供。 除了与放大器晶体管的控制端子连接的焊盘（外部端子）之外，还提供了第二焊盘，其以与电流镜配置的放大器晶体管连接的偏置晶体管的控制端子连接。

公开(公告)号：US20080136930A1

公开(公告)日：2008-06-12

申请号：US11945016

申请日：2007-11-26

申请人： Hiroyuki Nagai

发明人： Hiroyuki Nagai

IPC分类号： H04N5/228

CPC分类号： H04N5/232 ,  H04N5/23206 ,  H04N5/23222

摘要： A camera receives an identifier that represents an event held at a predetermined location during a predetermined period of time, and assigns the identifier to a captured image. The camera requests another device to process an image corresponding to the identifier.

摘要翻译： 摄像机在预定时段期间接收表示在预定位置保持的事件的标识符，并将标识符分配给捕获的图像。 相机请求另一个设备处理与标识符对应的图像。

公开(公告)号：US20070255760A1

公开(公告)日：2007-11-01

申请号：US11785772

申请日：2007-04-20

申请人： Fumiaki Itoh ,  Tsutomu Inose ,  Hiroyuki Nagai ,  Tomoyuki Shimizu ,  Hajime Futatsugi ,  Hidenori Ishiwata

发明人： Fumiaki Itoh ,  Tsutomu Inose ,  Hiroyuki Nagai ,  Tomoyuki Shimizu ,  Hajime Futatsugi ,  Hidenori Ishiwata

IPC分类号： G06F17/30

CPC分类号： G06F16/164 ,  G06F16/1774

摘要： A folder relationship holding unit (305) manages the relationship only between parents and children of files and/or folders arranged in a hierarchical structure. An operation target of the files and/or folders managed by the folder relationship holding unit (305) is operated in a locked state. To reflect the operation result on each apparatus that manages information identical to that managed by the folder relationship holding unit (305), the apparatus is notified of the operation result at a designated timing.

摘要翻译： 文件夹关系保持单元（305）仅管理以层次结构排列的文件和/或文件夹的父母和子节点之间的关系。 由文件夹关系保持单元（305）管理的文件和/或文件夹的操作对象在锁定状态下操作。 为了反映在管理与由文件夹关系保持单元（305）管理的信息相同的信息的每个装置上的操作结果，在指定的定时通知该装置的操作结果。

公开(公告)号：US20070227704A1

公开(公告)日：2007-10-04

申请号：US11685561

申请日：2007-03-13

申请人： Hiroyuki Nagai ,  Hiroyuki Ryoson

发明人： Hiroyuki Nagai ,  Hiroyuki Ryoson

IPC分类号： H05K7/20

CPC分类号： F28D15/06 ,  F28D15/0233 ,  F28D15/046 ,  F28F3/048 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A plate-type heat transport device and electronic instrument are provided. The plate-type heat transport device includes a heat absorbing plane absorbing heat because of the evaporation of a working fluid, a heat emission plane opposing the heat absorbing plane and emitting heat because of the condensation of the working fluid, and a flow path two-dimensionally arranged between the heat absorbing plane and the heat emission plane to align with the heat absorbing plane and the heat emission plane, the flow path allowing the working fluid to flow therethrough for changing the phase of the working fluid, and the flow path being capable of two-dimensionally diffusing the working fluid by generating a capillary force in the condensed working fluid.

摘要翻译： 提供板式热输送装置和电子仪器。 板式热传输装置包括由于工作流体的蒸发而吸收热量的吸热平面，与吸热面相对的发热面，由于工作流体的冷凝而发热， 三维排列在吸热面和发热面之间，以与吸热面和发热面对准，流路允许工作流体流过其中，以改变工作流体的相位，流路能够 通过在冷凝的工作流体中产生毛细管力二维扩散工作流体。

公开(公告)号：US07245184B2

公开(公告)日：2007-07-17

申请号：US10858373

申请日：2004-06-02

申请人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

发明人： Makoto Ishikawa ,  Hirokazu Tsurumaki ,  Masahiro Kikuchi ,  Hiroyuki Nagai

IPC分类号： H03F3/04

CPC分类号： H01L27/0629 ,  H01L2223/6644 ,  H01L2223/665 ,  H03F1/301 ,  H03F3/195

摘要： A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.

摘要翻译： 高频功率放大器电子部件（RF功率模块）被构造成以当前反射镜配置向放大器FET施加偏压。 在该RF功率模块中，校正了由于FET的短沟道效应引起的偏置点的偏差，并且降低了高频功率放大器特性的变化。 高频功率放大器电路（RF功率模块）被构造成使得高频功率放大器电路中的放大器晶体管的偏置电压以与当前反射镜配置的放大器晶体管连接的偏置晶体管提供。 除了与放大器晶体管的控制端子连接的焊盘（外部端子）之外，还提供了第二焊盘，其以与电流镜配置的放大器晶体管连接的偏置晶体管的控制端子连接。