公开(公告)号：US20050116348A1

公开(公告)日：2005-06-02

申请号：US11022644

申请日：2004-12-28

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

摘要翻译： 一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。

公开(公告)号：US06896590B2

公开(公告)日：2005-05-24

申请号：US10197602

申请日：2002-07-18

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed is a CMP slurry, comprising a dispersion containing first particles having a primary particle diameter falling within a range of 5 nm to 50 nm and second particles having a primary particle diameter falling within a range of 50 nm to 100 nm, the concentration of the first particles in the dispersion falling within a range of 0.5 to 5% by weight, and the concentration of the second particles in the dispersion falling within a range of 0.01 to 0.1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含含有一次粒径在5nm〜50nm范围内的第一粒子和一次粒径在50nm〜100nm的范围内的第二粒子的分散液， 分散体中的第一粒子在0.5〜5重量％的范围内，分散体中的第二粒子的浓度在0.01〜0.1重量％的范围内。

公开(公告)号：US06312321B1

公开(公告)日：2001-11-06

申请号：US09494656

申请日：2000-01-31

申请人： Dai Fukushima ,  Hiroyuki Yano ,  Gaku Minamihaba

发明人： Dai Fukushima ,  Hiroyuki Yano ,  Gaku Minamihaba

IPC分类号： B24B100

CPC分类号： B24B37/11 ,  B24D3/346

摘要： The CMP apparatus including a polishing pad having functional groups charged at an opposite polarity to that of the abrasives in the slurry, on its surface is used, so as to eliminate unnecessary Cu film (Cu wiring) and TaN film (barrier metal film) present outside the damascene wiring, by polishing.

摘要翻译： 使用包括在其表面上具有与浆料中的研磨剂的极性相反的官能团的抛光垫的CMP装置，以消除存在的不必要的Cu膜（Cu布线）和TaN膜（阻挡金属膜） 外面的镶嵌线，抛光。

公开(公告)号：US20110250756A1

公开(公告)日：2011-10-13

申请号：US13165980

申请日：2011-06-22

申请人： Kazuhito UCHIKURA ,  Hirotaka Shida ,  Yuuichi Hashiguchi ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Kazuhito UCHIKURA ,  Hirotaka Shida ,  Yuuichi Hashiguchi ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  H01L21/306 ,  B82Y99/00

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), wherein m and n individually represent integers equal to or larger than one, provided that m+n≦50 is satisfied.

摘要翻译： 化学机械研磨用水系分散体包含（A）磨粒，（B）至少一种喹啉羧酸和吡啶羧酸，（C）除喹啉羧酸以外的有机酸和吡啶羧酸，（D）氧化剂，（E ）具有三键的非离子表面活性剂，组分（B）的量（WB）与组分（C）的量（WC）的质量比（WB / WC）为0.01以上且小于2， 并且组分（E）由以下通式（1）表示，其中m和n分别表示等于或大于1的整数，条件是满足m + n＆nlE; 50。

公开(公告)号：US07655559B2

公开(公告)日：2010-02-02

申请号：US11552200

申请日：2006-10-24

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/20

CPC分类号： H01L21/02074 ,  C11D1/22 ,  C11D3/30 ,  C11D3/3765 ,  C11D11/0047

摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

摘要翻译： 提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂 基团和四甲基氢氧化铵。 树脂颗粒以0.01至1重量％的浓度掺入。 处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

公开(公告)号：US07307344B2

公开(公告)日：2007-12-11

申请号：US11239077

申请日：2005-09-30

申请人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Susumu Yamamoto

发明人： Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Susumu Yamamoto

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76834 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76877 ,  H01L21/76886 ,  H01L23/5258 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.

摘要翻译： 公开了一种半导体器件，包括半导体衬底，形成在半导体衬底上的第一绝缘膜，埋在第一绝缘膜中的Cu布线，在Cu布线上方形成的第二绝缘膜，以及由至少一种选择的金属制成的不连续膜 来自由Ti，Al，W，Pd，Sn，Ni，Mg和Zn组成的组或其金属氧化物，并且介于Cu配线和第二绝缘膜之间的界面处。

公开(公告)号：US20070232068A1

公开(公告)日：2007-10-04

申请号：US11717045

申请日：2007-03-13

申请人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Takatoshi Ono ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Nobuyuki Kurashima ,  Dai Fukushima ,  Takatoshi Ono ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B24D3/02 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

摘要： A slurry for touch-up CMP is provided, which includes water, colloidal silica having an average primary particle diameter of 5 to 60 nm, unsintered cerium oxide having an average primary particle diameter of 5 to 60 nm, a multivalent organic acid containing no nitrogen atoms, and a nitrogen-containing heterocyclic compound. The slurry has a pH of 8 to 12.

摘要翻译： 提供了一种用于接触CMP的浆料，其包括平均一次粒径为5至60nm的水，平均一次粒径为5至60nm的未烧结的氧化铈，不含氮的多价有机酸 原子和含氮杂环化合物。 浆料的pH值为8〜12。

公开(公告)号：US20070072427A1

公开(公告)日：2007-03-29

申请号：US11526671

申请日：2006-09-26

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Susuma Yamamoto

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima ,  Susuma Yamamoto

IPC分类号： H01L21/461 ,  H01L21/302 ,  C03C15/00 ,  B44C1/22 ,  C23F1/00

CPC分类号： C23F3/00 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： A method for fabricating a semiconductor device includes forming a copper film above a surface of a substrate, forming on a polishing pad a material which contains copper, wherein said copper does not derive from said copper film, and after having formed the copper-containing material on said polishing pad, polishing said copper film by use of said polishing pad.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在基板的表面的上方形成铜膜，在研磨垫上形成含有铜的材料，所述铜不能从所述铜膜得到，并且在形成含铜材料之后 在所述抛光垫上，利用所述抛光垫对所述铜膜进行抛光。

公开(公告)号：US20060243702A1

公开(公告)日：2006-11-02

申请号：US11340494

申请日：2006-01-27

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： C09K13/00 ,  H01L21/461 ,  B44C1/22 ,  H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  H01L22/26

摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.

摘要翻译： 提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

公开(公告)号：US20060151888A1

公开(公告)日：2006-07-13

申请号：US11370050

申请日：2006-03-08

申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.