公开(公告)号：US20010019103A1

公开(公告)日：2001-09-06

申请号：US09779005

申请日：2001-02-07

Inventor： Eiichi Sugai ,  Kiyoaki Watabe ,  Kazunori Yamaga ,  Seiichi Fujita

IPC: G01J004/00 ,  G01J005/08

CPC classification number: G01L1/246 ,  G01D5/35316

Abstract: In a detection section using a fiber grating (FBG), both ends of the FBG are protected with resin coating and a coated part is adhered or mechanically clamped to fixed parts. A spring or a lever or both of these are connected to one end of this fixed part. This is used as a detection section to convert a variation of a physical quantity such as displacement, weight, pressure or acceleration applied to between the fixed parts to a variation of a reflected wavelength or a transmitted wavelength from a fiber grating and to output the variation of the reflected wavelength and transmitted wavelength.

Abstract translation: 在使用光纤光栅（FBG）的检测部中，FBG的两端被树脂涂层保护，并且涂覆部件被粘合或机械地夹紧到固定部件。 弹簧或杠杆或这两者都连接到该固定部分的一端。 这被用作检测部分，以将施加到固定部件之间的位移，重量，压力或加速度的物理量的变化转换成来自光纤光栅的反射波长或透射波长的变化，并输出变化 的反射波长和透射波长。

公开(公告)号：US20010014111A1

公开(公告)日：2001-08-16

申请号：US09784011

申请日：2001-02-16

Inventor： Masahiro Shimizu

IPC: H01L021/00 ,  G01J005/08 ,  G01N025/00 ,  G01K001/14

CPC classification number: C23C16/46 ,  C23C16/52 ,  G01J5/0003

Abstract: To provide a method and equipment for measuring a radiation temperature both capable of measuring temperatures of a substrate more accurately and stably than ever and equipment for manufacturing semiconductors therein such a radiation temperature measuring method can be applied. A reflectometer 21 irradiates, on a wafer W having Si and SiO2 layers, light of a wavelength that transmits the Si layer and is reflected from the SiO2 layer (an interface between Si and SiO2) to measure reflectance. With the reflectance and radiation energy at the wavelength of the wafer W measured by a radiation thermometer, a temperature of the wafer W is calculated. Thereby, even when a thin film is formed on a rear face of the substrate to blot and to result in a change of a state thereof, by the use of a stable interface in the substrate, temperatures can be measured with precision and stability.

Abstract translation: 为了提供一种用于测量辐射温度的方法和设备，其能够比以前更准确和稳定地测量衬底的温度，并且可以应用其中制造半导体的设备。 反射计21在具有Si和SiO 2层的晶片W上照射透射Si层并从SiO 2层（Si和SiO 2之间的界面）反射的波长的光以测量反射率。 利用由辐射温度计测量的晶片W的波长处的反射率和辐射能，计算晶片W的温度。 因此，即使在基板的背面上形成薄膜以进行印迹并导致其状态的变化，通过在基板中使用稳定的界面，也可以精确且稳定地测量温度。