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84 条记录 (耗时 0.009 秒)

    Method for punching slug from workpiece
    81.
    发明授权
    Method for punching slug from workpiece 失效
    从工件上冲压块塞的方法

    公开(公告)号：US06276246B1

    公开(公告)日：2001-08-21

    申请号：US09411575

    申请日：1999-10-04

    申请人： Raschid J. Bezama ,  Laertis Economikos ,  Mark J. LaPlante ,  David C. Long ,  Keith C. O'Neil

    发明人： Raschid J. Bezama ,  Laertis Economikos ,  Mark J. LaPlante ,  David C. Long ,  Keith C. O'Neil

    IPC分类号： B26D718

    CPC分类号： B26D7/1863 ,  B26D7/1854 ,  B26F2210/08 ,  H05K1/0306 ,  H05K3/005 ,  Y10T83/0453 ,  Y10T83/2066 ,  Y10T83/2068 ,  Y10T83/207

    摘要： A punched slug removal system for punching a slug from a workpiece and removing the punched slug. The system includes a punch having a reciprocating travel path with a transition point where the punch changes direction. A die plate has an aperture into which a die bushing may be disposed. The die bushing provides support for the workpiece and has an opening through which the punch and a slug pass. A manifold supports the die plate and (if present) the die bushing and has a distribution channel and an orifice which direct a gas flow onto a slug attached to the punch in a direction perpendicular to the reciprocating travel path of the punch to remove the slug from the punch. The distribution channel is tapered to increase the velocity of the gas flow. The orifice is positioned at the top of the manifold adjacent the transition point of the reciprocating travel path of the punch. The manifold extends into the aperture of the die plate, reducing the cross sectional area of the aperture, and has a step formed under the punch. The system also includes a vacuum, offset relative to the punch and applied to the side of the punch opposite the orifice, to enhance removal of slugs from the punch.

    摘要翻译： 一种用于从工件上冲压块塞并且移除冲压块的冲压块塞移除系统。 该系统包括具有往复运动路径的冲头，其具有冲头改变方向的转变点。 模板具有可以设置模具衬套的孔。 模具衬套为工件提供支撑，并且具有穿孔穿过的开口。 歧管支撑模板和（如果存在）模具衬套，并且具有分配通道和孔口，该分配通道和孔口沿着垂直于冲头的往复运动路径的方向将气流引导到附接到冲头的塞子上，以移除塞子 从拳打 分配通道是锥形的，以增加气流的速度。 孔口位于歧管的顶部，与冲头的往复运动路径的过渡点相邻。 歧管延伸到模板的孔中，减小了孔的横截面积，并且具有形成在冲头下方的台阶。 该系统还包括真空，相对于冲头偏移并施加到与孔口相对的冲头侧面，以增强从冲头中移除塞子。

    Method for reducing stress in the metallization of an integrated circuit
    82.
    发明授权
    Method for reducing stress in the metallization of an integrated circuit 失效
    降低集成电路金属化应力的方法

    公开(公告)号：US5939335A

    公开(公告)日：1999-08-17

    申请号：US3107

    申请日：1998-01-06

    申请人： Kenneth C. Arndt ,  Richard A. Conti ,  David M. Dobuzinsky ,  Laertis Economikos ,  Jeffrey P. Gambino ,  Peter D. Hoh ,  Chandrasekhar Narayan

    发明人： Kenneth C. Arndt ,  Richard A. Conti ,  David M. Dobuzinsky ,  Laertis Economikos ,  Jeffrey P. Gambino ,  Peter D. Hoh ,  Chandrasekhar Narayan

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/336

    CPC分类号： H01L21/76804 ,  H01L21/32136 ,  H01L21/76835 ,  H01L21/76885

    摘要： The stresses commonly induced in the dielectrics of integrated circuits manufactured using metal patterning methods, such as reactive ion etching (RIE) and damascene techniques, can be reduced by rounding the lower corners associated with the features which are formed as part of the integrated circuit (e.g., the interconnects) before applying the outer (i.e., passivation) layer. In connection with the formation of metal lines patterned by a metal RIE process, such corner rounding can be achieved using a two-step metal etching process including a first step which produces a vertical sidewall and a second step which tapers lower portions of the vertical sidewall or which produces a tapered spacer along the lower portions of the vertical sidewall. This results in a rounded bottom corner which improves the step coverage of the overlying dielectric, in turn eliminating the potential for cracks. For metal lines patterned by damascene, such corner rounding can be achieved using a two-step trench etching process including a first step which produces a vertical sidewall, and a second step which produces a tapered sidewall along lower portions of the vertical sidewall.

    摘要翻译： 通过使与金属图案化方法（例如反应离子蚀刻（RIE）和镶嵌技术）一起制造的集成电路的电介质中通常感应的应力可以通过将与形成为集成电路的一部分的特征相关联的下角 在施加外部（即钝化）层之前，例如，互连）。 关于通过金属RIE工艺形成的金属线的形成，可以使用包括产生垂直侧壁的第一步骤和使垂直侧壁的下部逐渐变细的第二步骤的两步金属蚀刻工艺来实现这种角圆化 或者沿着垂直侧壁的下部产生锥形间隔物。 这导致圆角的底角，其改善了上覆电介质的台阶覆盖，从而消除了裂纹的可能性。 对于由大马士革图案化的金属线，可以使用包括产生垂直侧壁的第一步骤的两步沟槽蚀刻工艺，以及沿着垂直侧壁的下部产生锥形侧壁的第二步骤来实现这种角落圆化。