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公开(公告)号：US20100148145A1
公开(公告)日：2010-06-17
申请号：US12161014
申请日：2007-01-17
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L33/32 , H01S5/2009 , H01S5/22 , H01S5/305 , H01S5/3211
摘要： A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate 10 and a nitride based semiconductor multilayer structure that has been formed on the semiconductor substrate 10. The multilayer structure includes an active layer 16 that produces emission and multiple semiconductor layers 12, 14 and 15 that have been stacked one upon the other between the active layer 16 and the substrate 10 and that include an n-type dopant. Each and every one of the semiconductor layers 12, 14 and 15 includes Al atoms.
摘要翻译： 根据本发明的氮化物半导体发光器件包括已经形成在半导体衬底10上的氮化物基半导体衬底10和基于氮化物的半导体多层结构。多层结构包括产生发射的多个半导体 层12,14和15已经在有源层16和衬底10之间彼此堆叠并且包括n型掺杂剂。 半导体层12,14和15中的每一个都包括Al原子。
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公开(公告)号：US07606276B2
公开(公告)日：2009-10-20
申请号：US11570147
申请日：2006-05-12
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/20 , H01L33/22 , H01L33/382 , H01S5/0207 , H01S5/0421 , H01S5/0425
摘要： A nitride semiconductor device 100 according to the present invention includes: an n-GaN substrate 1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate 1 and which includes a p-type region and an n-type region; a p-electrode 32, which makes contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-electrode 34, which is arranged on the bottom surface of the substrate 1. The bottom surface of the substrate 1 includes a roughened region 40a and a flattened region 40b. And the n-electrode 34 covers the roughened region 40a at least partially.
摘要翻译： 根据本发明的氮化物半导体器件100包括：n-GaN衬底1; 形成在n-GaN衬底1的主表面上并且包括p型区和n型区的半导体多层结构; p电极32，其与包括在半导体多层结构中的p型区域的一部分接触; 以及设置在基板1的底面的n电极34.基板1的底面包括粗糙区域40a和平坦化区域40b。 n电极34至少部分地覆盖粗糙区域40a。
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公开(公告)号：US20090059983A1
公开(公告)日：2009-03-05
申请号：US12258881
申请日：2008-10-27
IPC分类号： H01S5/323
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译： 提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。
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公开(公告)号：US07221690B2
公开(公告)日：2007-05-22
申请号：US10643944
申请日：2003-08-20
IPC分类号： H01S3/04
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3072 , H01S5/321 , H01S5/3211 , H01S5/343 , H01S5/34333 , H01S2304/12
摘要： This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a substrate (11), the active layer (101) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer (21) sandwiched between the active layer (101) and the p-type semiconductor layer (24), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.
摘要翻译： 本说明书涉及其中n型半导体层（13），有源层（101）和p型半导体层（24）依次层叠在基板（11）上的半导体激光器， 包括由InGaN构成的阱层的层（101），所述半导体激光器包括夹在有源层（101）和p型半导体层（24）之间的中间层（21），所述中间层不包括有意添加的杂质 并且由氮化镓系化合物半导体构成。 该半导体激光器在高光输出功率条件下具有延长的寿命。
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公开(公告)号：US06989553B2
公开(公告)日：2006-01-24
申请号：US10625256
申请日：2003-07-23
IPC分类号： H01L31/0312
CPC分类号： H01L29/155 , H01L29/045 , H01L29/1608 , H01L29/2003 , H01L29/365 , H01L29/812 , H01L29/872
摘要： An active region 30 is formed on a substrate 3, which is made of SiC, GaN, or GaAs, for example, by alternately layering undoped layers 22 with a thickness of for example about 50 nm and n-type doped layers 23 with a thickness (for example, about 10 nm) that is thin enough that quantum effects can be achieved. Carriers spread out into the undoped layers 22 from sub-bands of the n-type doped layers 23 that occur due to quantum effects. In the undoped layers 22, which have a low concentration of impurities, the scattering of impurities is reduced, and therefore a high carrier mobility can be obtained there, and when the entire active region 30 has become depleted, a large withstand voltage value can be obtained due to the undoped layers 22 by taking advantage of the fact that there are no more carriers in the active region 30.
摘要翻译： 有源区30形成在由SiC，GaN或GaAs制成的基板3上，例如通过交替层叠厚度例如约50nm的未掺杂层22和厚度为例如约50nm的n型掺杂层23 （例如，约10nm），其足够薄以使得能够实现量子效应。 由于量子效应，载体从n型掺杂层23的子带扩散到未掺杂层22中。 在具有低浓度杂质的未掺杂层22中，杂质的散射减少，因此可以获得高的载流子迁移率，并且当整个有源区30已经耗尽时，可以有大的耐受电压值 通过利用在有源区域30中不再具有载流子的事实，由于未掺杂层22而获得。
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公开(公告)号：US20050269584A1
公开(公告)日：2005-12-08
申请号：US11084526
申请日：2005-03-21
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/2004 , H01S5/22 , H01S5/2205 , H01S5/34333 , H01S2301/173
摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
摘要翻译： 提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。
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公开(公告)号：US06900483B2
公开(公告)日：2005-05-31
申请号：US10162503
申请日：2002-06-04
申请人： Masao Uchida , Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Kunimasa Takahashi , Ryoko Miyanaga , Kenya Yamashita
发明人： Masao Uchida , Makoto Kitabatake , Toshiya Yokogawa , Osamu Kusumoto , Kunimasa Takahashi , Ryoko Miyanaga , Kenya Yamashita
IPC分类号： H01L21/329 , H01L29/24 , H01L29/872 , H01L29/80
CPC分类号： H01L29/66143 , H01L29/1608 , H01L29/872
摘要： A Schottky diode includes a semiconductor substrate made of 4H—SiC, an epitaxially grown 4H—SiC layer, an ion implantation layer, a Schottky electrode, an ohmic electrode, and an insulative layer made of a thermal oxide film. The Schottky electrode and the insulative layer are not in contact with each other, with a gap being provided therebetween, whereby an altered layer does not occur. Therefore, it is possible to suppress the occurrence of a leak current.
摘要翻译： 肖特基二极管包括由4H-SiC制成的半导体衬底，外延生长的4H-SiC层，离子注入层，肖特基电极，欧姆电极和由热氧化膜制成的绝缘层。 肖特基电极和绝缘层彼此不接触，其间设置有间隙，由此不发生改变的层。 因此，可以抑制泄漏电流的发生。
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公开(公告)号：US06654604B2
公开(公告)日：2003-11-25
申请号：US09989270
申请日：2001-11-20
IPC分类号： H04Q720
CPC分类号： H03F3/601 , H01L21/8213 , H01L27/0605 , H01L29/105 , H01L29/157 , H01L29/1608 , H01L29/365 , H01L29/7725 , H01L29/812 , H01L29/872 , H03D7/125 , H03F2200/294
摘要： Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of &dgr;-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of &dgr;-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the &dgr;-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.
摘要翻译： 用于通信系统的设备具有通过将肖特基二极管，MOSFET，电容器和电感器集成在SiC衬底中而形成的半导体器件。 SiC衬底具有依次向上设置的第一多层部分和第二多层部分。 第一多层部分由各自含有高浓度的n型杂质（氮）和交替层叠的未掺杂层的δ掺杂层组成。 第二多层部分由各自含有高浓度的p型杂质（铝）和交替层叠的未掺杂层的δ掺杂层组成。 δ掺杂层中的载体广泛扩展到未掺杂的层。 由于每个未掺杂的层中的杂质浓度低，所以杂质离子的散射被降低，从而获得低的电阻和高的击穿电压。
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公开(公告)号：US5822347A
公开(公告)日：1998-10-13
申请号：US589488
申请日：1996-01-22
申请人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
发明人： Toshiya Yokogawa , Shigeo Yoshii , Yoichi Sasai
IPC分类号： H01L33/00 , H01L33/10 , H01L33/28 , H01L33/46 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19 , H01L29/22
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/465 , H01S5/18341 , H01S5/327 , H01S5/347 , H01L33/105 , H01S2301/166 , H01S5/0207 , H01S5/02461 , H01S5/18308 , H01S5/18369 , H01S5/2063 , H01S5/2081 , H01S5/2211 , H01S5/2214 , H01S5/2231
摘要： In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided. Alternatively, on an n type GaAs substrate, an n type ZnSe epitaxial layer, an n type ZnMgSSe cladding layer, an n type ZnSSe optical waveguide layer, a ZnCdSe active layer, a p type ZnSSe optical waveguide layer, a p type ZnMgSSe cladding layer, a p type ZnTe contact layer and a polycrystalline ZnO burying layer are respectively formed. Furthermore, a p type AuPd electrode and an n type In electrode are respectively provided.
摘要翻译： 在II-VI族半导体激光器中，在n型GaAs衬底上依次沉积n型ZnSe层，ZnCdSe阱层的多量子阱层和ZnSe阻挡层以及p型ZnSe层。 在p型ZnSe层的两侧设置多晶ZnO层，用于收缩电流。 在p型ZnSe层以及通过蚀刻GaAs衬底暴露的n型ZnSe层的表面上，设置分别由用于获得激光振荡的多晶SiO 2层和多晶TiO 2层构成的多片反射镜。 此外，分别设置p型AuPd电极和n型AuGeNi电极。 或者，在n型GaAs衬底上，n型ZnSe外延层，n型ZnMgSSe覆层，n型ZnSSe光波导层，ZnCdSe有源层，ap型ZnSSe光波导层，ap型ZnMgSSe覆层，ap 分别形成ZnTe接触层和多晶ZnO掩埋层。 此外，分别设置p型AuPd电极和n型In电极。
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公开(公告)号：US5274248A
公开(公告)日：1993-12-28
申请号：US892888
申请日：1992-06-03
申请人： Toshiya Yokogawa , Tadashi Narusawa , Minoru Kubo
发明人： Toshiya Yokogawa , Tadashi Narusawa , Minoru Kubo
CPC分类号： H01L33/285 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/06
摘要： The present invention provides a p-n junction type blue luminescence device forming a p-type hole injection layer and having high light-emission efficiency. On an n-conduction type ZnS substrate 111, there is formed a multiquantum well structure 112 alternately laminating a p-type ZnTe layer 112a and a non-doped ZnS layer 112b. And, a positive electrode 113 and a negative electrode 114 are provided on the multiquantum well structure 112 and the ZnS crystal, respectively. By applying forward bias voltage on this light-emitting device, electrons are injected from the n-type ZnS substrate to the multiquantum well structure 112. Then, these electrons are recombined with holes in the multiquantum well structure 112, so as to emit blue luminescence light. Thus, it becomes possible to easily and reproducibly obtain a p-conduction type hole injection layer so as to realize highly concentrated carrier injection and obtain high efficiency in emitting blue luminescence light.
摘要翻译： 本发明提供一种形成p型空穴注入层并具有高发光效率的p-n结型蓝色发光元件。 在n导电型ZnS基板111上形成交替层叠p型ZnTe层112a和非掺杂ZnS层112b的多量子阱结构112。 并且，在多量子阱结构体112和ZnS晶体上分别设置有正极113和负极114。 通过在该发光器件上施加正向偏置电压，将电子从n型ZnS衬底注入到多量子阱结构112中。然后，这些电子与多量子阱结构112中的空穴重新结合，以发射蓝色发光 光。 因此，可以容易且可重复地获得p导电型空穴注入层，从而实现高度集中的载流子注入，并且获得发射蓝色发光的高效率。
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