摘要:
A fault inspection method and apparatus in which the scattergram is separated or objects of comparison are combined in such a manner as to reduce the difference between an inspection object image and a reference image. As a result, the difference between images caused by the thickness difference in the wafer can be tolerated and the false information generation prevented without adversely affecting the sensitivity.
摘要:
For the purpose of reducing a false report and shortening inspection time, an area to be inspected is locally inspected under optimum inspection conditions. In order to avoid the number of detected defects from increasing explosively, and thereby to facilitate control of a critical defect, general-purpose layout data, which is used for producing a mask of a semiconductor wafer, is accumulated in a design information server 2. With reference to the layout data, an area to be inspected, which is inspected by a pattern inspecting apparatus 1, is divided into partial inspection areas including a cell portion and a non-cell portion. Inspection parameters are set for each of the partial inspection areas. In addition, the defect reviewing apparatus 8 obtains an inspection result of the pattern inspecting apparatus 1. When obtaining a defect image, the defect reviewing apparatus 8 identifies a position, where the defect occurred, from among a cell portion, a non-cell portion, a pattern dense portion, and the like according to layout data. Moreover, the defect reviewing apparatus 8 sets inspection parameters, such as pickup magnification of this defect, in response to a result of the identification to set a control criterion of criticality.
摘要:
A method and apparatus for inspecting pattern defects emitting a laser beam, adjusting a light-amount of the laser beam, converting the light-amount adjusted laser beam into a slit-like laser light flux, lowering coherency of the slit-like laser light flux, and irradiating a sample with the coherence reduced slit-like laser light flux. An image of reflection light from the sample is obtained, and a detector is provided which includes the image sensor for receiving the image of the reflection light and for converting it into a detected image signal. An image processor is provided for detecting defects on patterns formed on the sample in accordance with the detected image signal.
摘要:
An object of the present invention is to provide a defect detection method and its apparatus which can adjust sensitivity easily by managing both reduction in the number of false reports and highly-sensitive detection of a defect using single threshold value setting in comparison inspection that compares an image to be inspected with a reference image to detect a defect judging from a difference between the images. According to the present invention, adjusting the brightness before inspection so that a difference becomes small at the edges of a high-contrast pattern in a target image enables reduction in the number of false reports caused by an alignment error, and achievement of highly-sensitive defect inspection using a low threshold value, without increasing the threshold value. Moreover, in the case of inspection targeted for a semiconductor wafer, which produces a problem of irregularity in brightness of a pattern caused by a difference between film thicknesses, the present invention reduces the number of false reports caused by the irregularity in brightness, and realizes inspection with high sensitivity without increasing a threshold value, by adjusting the brightness of both images before the inspection.
摘要:
A method and apparatus for inspecting pattern defects emitting a laser beam, adjusting a light-amount of the laser beam, converting the light-amount adjusted laser beam into a slit-like laser light flux, lowering coherency of the slit-like laser light flux, and irradiating a sample with the coherence reduced slit-like laser light flux. An image of reflection light from the sample is obtained, and a detector is provided which includes the image sensor for receiving the image of the reflection light and for converting it into a detected image signal. An image processor is provided for detecting defects on patterns formed on the sample in accordance with the detected image signal.
摘要:
In a pattern inspection apparatus, influences of pattern brightness variations that is caused in association with, for example, a film thickness difference or a pattern width variation can be reduced, high sensitive pattern inspection can be implemented, and a variety of defects can be detected. Thereby, the pattern inspection apparatus adaptable to a broad range of processing steps is realized. In order to realize this, the pattern inspection apparatus of the present invention performs comparison between images of regions corresponding to patterns formed to be same patterns, thereby determining mismatch portions across the images to be defects. The apparatus includes multiple sensors capable of synchronously acquiring images of shiftable multiple detection systems different from one another, and an image comparator section corresponding thereto. In addition, the apparatus includes means of detecting a statistical offset value from the feature amount to be a defect, thereby enabling the defect to be properly detected even when a brightness difference is occurring in association with film a thickness difference in a wafer.
摘要:
A method and apparatus for inspecting pattern defects emitting a laser beam, adjusting a light-amount of the laser beam, converting the light-amount adjusted laser beam into a slit-like laser light flux, lowering coherency of the slit-like laser light flux, and irradiating a sample with the coherence reduced slit-like laser light flux. An image of reflection light from the sample is obtained, and a detector is provided which includes the image sensor for receiving the image of the reflection light and for converting it into a detected image signal. An image processor is provided for detecting defects on patterns formed on the sample in accordance with the detected image signal.
摘要:
A pattern inspection apparatus includes a light source which emits ultraviolet light, an irradiator which reduces coherency of the ultraviolet light and irradiates the coherency reduced ultraviolet light onto a specimen on which a pattern is formed through an objective lens, and a focus control means which projects light on the specimen from outside the objective lens, detects light reflected from the specimen by the projection and adjusts a height of the specimen relative to the objective lens. The apparatus further includes an image which forms an image of the specimen irradiated with the ultraviolet light and detects the formed image with a sensor, an image processor which processes a signal outputted from the sensor to detect a defect of the specimen, and a display which displays information of the defect detected by the image processor.
摘要:
A method and apparatus for detecting pattern defects which includes annularly scanning of a laser beam emitted from a laser light source on a pupil of an objective lens, illuminating the scanned laser beam, through the objective lens, onto a sample on which there is formed a pattern coated with an optically transparent thin film, acquiring an optical image of the illuminated sample, and processing the acquired image to find defects in the pattern. The annular scan diameter of the laser beam is determined based on the thickness of the optically transparent thin film.
摘要:
Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.