公开(公告)号：US20210090791A1

公开(公告)日：2021-03-25

申请号：US16583232

申请日：2019-09-25

申请人： Chih-Hung Lin ,  Kun-Chuan Chang

发明人： Chih-Hung Lin ,  Kun-Chuan Chang

IPC分类号： H01F27/30 ,  H01F27/32 ,  H01F27/28 ,  H01F27/29

摘要： A coil module includes a first coil set and a second coil set. The first coil set has an isolation frame. The second coil set has an open first winding body. The first winding body has two ends which are out of contact with each other. One of the two ends has a first conductive portion projecting from the first winding body. The other one of the two ends has a connecting end from which an open second winding body is integratedly outward extended. A terminal of the second winding body has a second conductive portion which is outward protrudent. The connecting end comprises a bent portion which makes the second winding body and the first winding body arranged in the same direction so that the second winding body and the first winding body are attached on two opposite sides of the isolation frame.

公开(公告)号：USD729024S1

公开(公告)日：2015-05-12

申请号：US29490852

申请日：2014-05-14

申请人： Chih-Hung Lin

设计人： Chih-Hung Lin

公开(公告)号：USD691801S1

公开(公告)日：2013-10-22

申请号：US29438974

申请日：2012-12-05

申请人： Chih-Hung Lin

设计人： Chih-Hung Lin

公开(公告)号：US20130271065A1

公开(公告)日：2013-10-17

申请号：US13553811

申请日：2012-07-19

申请人： SHEAN-KWANG CHOU ,  Hung-Hsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen

发明人： SHEAN-KWANG CHOU ,  Hung-Hsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen

IPC分类号： H02J7/00

CPC分类号： G01R31/36 ,  G01R31/3651

摘要： The present invention relates to a high-voltage battery charging simulation system that includes a simulation high-voltage battery pack, a simulation battery management system, a multi-party communication device, and a charging station. The voltage of the simulation high-voltage battery pack can be calculated and updated immediately by the simulation battery management system to simulate the feature of real battery pack, so that it can detect the operation of the multi-party communication device and the charging station.

摘要翻译： 本发明涉及一种高压电池充电模拟系统，其包括模拟高电压电池组，模拟电池管理系统，多方通信装置和充电站。 仿真高压电池组的电压可以通过模拟电池管理系统立即计算和更新，以模拟实际电池组的特征，从而可以检测多方通信设备和充电站的运行情况。

公开(公告)号：US20130229143A1

公开(公告)日：2013-09-05

申请号：US13417239

申请日：2012-03-10

申请人： SHEAN-KWANG CHOU ,  Ying-Chao Liao ,  Hung-Gsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen ,  Hsiao-Yu Hsu ,  Ming-En Fang ,  Kai-Ping Hsu ,  Wen-Hua Pan

发明人： SHEAN-KWANG CHOU ,  Ying-Chao Liao ,  Hung-Gsi Lin ,  Chih-Hung Lin ,  Sheng-Hua Chen ,  Hsiao-Yu Hsu ,  Ming-En Fang ,  Kai-Ping Hsu ,  Wen-Hua Pan

IPC分类号： H02J7/00

CPC分类号： H02J7/0004 ,  H02J2007/0096

摘要： A multi-party communication control system and charge process of a DC charging system is provided. According battery pack information transmitted by a battery control system, a multi-party communication control device determines a charge current or a charge voltage and a voltage-controlled charge mode required by a battery pack. The multi-party communication control device then translates the charge voltage or the charge current to a CHAdeMO language that is next transmitted to a CHAdeMO charger.

摘要翻译： 提供了一种多方通信控制系统和直流充电系统的充电过程。 根据由电池控制系统发送的电池组信息，多方通信控制装置确定电池组所需的充电电流或充电电压以及电压控制充电模式。 多方通信控制装置然后将充电电压或充电电流转换为下一个发送到CHAdeMO充电器的CHAdeMO语言。

公开(公告)号：US08490192B2

公开(公告)日：2013-07-16

申请号：US12571447

申请日：2009-10-01

申请人： Shih-Yao Dai ,  Yu-Chen Chang ,  Jain-Shing Wu ,  Chih-Hung Lin ,  Yen-Nun Huang ,  Sy-Yen Kuo

发明人： Shih-Yao Dai ,  Yu-Chen Chang ,  Jain-Shing Wu ,  Chih-Hung Lin ,  Yen-Nun Huang ,  Sy-Yen Kuo

IPC分类号： G06F12/14

CPC分类号： G06F21/56 ,  G06F21/568

摘要： A method and a system for cleaning malicious software (malware), a computer program product, and a storage medium are provided. A relation graph is established to associate processes in an operating system and related elements. A node marking action is performed on the relation graph when a predetermined condition is satisfied. The node corresponding to a malicious process and its related nodes are marked with a first label. The nodes of other normal processes and their related nodes are marked with a second label. Then, those nodes marked with both the first label and the second label are screened, so that each of the nodes is marked with only the first label or the second label. Finally, the processes and elements corresponding to the nodes marked with the first label are removed.

摘要翻译： 提供了一种用于清洁恶意软件（恶意软件），计算机程序产品和存储介质的方法和系统。 建立关系图以将操作系统中的过程和相关元素相关联。 当满足预定条件时，在关系图上执行节点标记动作。 对应于恶意进程的节点及其相关节点标有第一个标签。 其他正常进程的节点及其相关节点标有第二个标签。 然后，屏蔽标记有第一标签和第二标签的节点，使得每个节点仅标记第一标签或第二标签。 最后，删除与标记有第一个标签的节点对应的进程和元素。

公开(公告)号：US08477493B2

公开(公告)日：2013-07-02

申请号：US13193117

申请日：2011-07-28

申请人： Chun-Che Wu ,  Chun-Nan Su ,  Chih-Hung Lin ,  Chung-Chun Wu

发明人： Chun-Che Wu ,  Chun-Nan Su ,  Chih-Hung Lin ,  Chung-Chun Wu

IPC分类号： H05K5/00

CPC分类号： F16M11/10 ,  A45C11/00 ,  A45C2011/003 ,  F16M13/00 ,  G06F1/1632 ,  G06F2200/1633

摘要： A storage device for a tablet personal computer is provided. The storage device includes a base and an upper cover for fixing the tablet personal computer. The base includes a foldable structure. When the foldable structure is folded and stacked on a side of the base, a receiving space for fixing a keyboard device is defined by the base and the foldable structure. In such way, the tablet personal computer and the keyboard device can be simultaneously stored within the storage device.

摘要翻译： 提供了一种用于平板电脑的存储设备。 存储装置包括用于固定平板电脑的基座和上盖。 底座包括可折叠结构。 当可折叠结构被折叠并堆叠在基座的一侧时，用于固定键盘装置的接收空间由基座和可折叠结构限定。 以这种方式，平板电脑和键盘装置可以同时存储在存储装置内。

公开(公告)号：US08456582B2

公开(公告)日：2013-06-04

申请号：US13030133

申请日：2011-02-18

申请人： Yu-Cheng Chen ,  Yi-Hui Li ,  Chih-Hung Lin ,  Maw-Song Chen

发明人： Yu-Cheng Chen ,  Yi-Hui Li ,  Chih-Hung Lin ,  Maw-Song Chen

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/133707

摘要： An active device, a pixel structure, and a display panel are provided. The pixel structure includes a scan line, a data line, an active device, a gate insulating layer, a pixel electrode, a capacitor electrode, and a capacitor dielectric layer. The active device includes a gate, a channel, a source, and a drain. The gate is electrically connected to the scan line. The source is electrically connected to the data line. The gate insulating layer is disposed between the gate and the channel. The pixel electrode is electrically connected to the drain. The capacitor electrode is located on the gate insulating layer. The capacitor dielectric layer is located between the capacitor electrode and the drain.

摘要翻译： 提供有源器件，像素结构和显示面板。 像素结构包括扫描线，数据线，有源器件，栅极绝缘层，像素电极，电容器电极和电容器电介质层。 有源器件包括栅极，沟道，源极和漏极。 栅极电连接到扫描线。 源电连接到数据线。 栅极绝缘层设置在栅极和沟道之间。 像素电极电连接到漏极。 电容电极位于栅极绝缘层上。 电容器电介质层位于电容器电极和漏极之间。

公开(公告)号：US20130075766A1

公开(公告)日：2013-03-28

申请号：US13448359

申请日：2012-04-16

申请人： Che-Chia Chang ,  Sheng-Chao Liu ,  Wu-Liu Tsai ,  Chuan-Sheng Wei ,  Chih-Hung Lin

发明人： Che-Chia Chang ,  Sheng-Chao Liu ,  Wu-Liu Tsai ,  Chuan-Sheng Wei ,  Chih-Hung Lin

IPC分类号： H01L27/15 ,  H01L27/105

CPC分类号： G02F1/136213 ,  G02F1/136286 ,  G09G3/3677 ,  G09G2310/0286 ,  H01L27/1255

摘要： A thin film transistor device, disposed on a substrate, includes a gate electrode, a semiconductor channel layer, a gate insulating layer disposed between the gate electrode and the semiconductor channel layer, a source electrode and a drain electrode disposed at two opposite sides of the semiconductor channel layer and partially overlapping the semiconductor channel layer, respectively, a capacitor electrode at least partially overlapping the gate electrode, and a capacitor dielectric layer disposed between the capacitor electrode and the gate electrode. The capacitor electrode, the gate electrode and the capacitor dielectric layer form a capacitor device.

摘要翻译： 设置在基板上的薄膜晶体管器件包括栅电极，半导体沟道层，设置在栅电极和半导体沟道层之间的栅极绝缘层，设置在栅极电极和半导体沟道层的两相对侧的源电极和漏电极 半导体沟道层和半导体沟道层的部分重叠，至少部分地与栅电极重叠的电容器电极和设置在电容器电极和栅电极之间的电容器电介质层。 电容器电极，栅极电极和电容器介电层形成电容器器件。

公开(公告)号：US08383480B1

公开(公告)日：2013-02-26

申请号：US13295191

申请日：2011-11-14

申请人： Chih-Ming Wang ,  Ping-Chia Shih ,  Chi-Cheng Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin

发明人： Chih-Ming Wang ,  Ping-Chia Shih ,  Chi-Cheng Huang ,  Hsiang-Chen Lee ,  Chih-Hung Lin

IPC分类号： H01L21/336

CPC分类号： H01L29/4234 ,  H01L21/28282 ,  H01L29/66833 ,  H01L29/792

摘要： A method for forming a semiconductor structure includes following steps. A substrate structure is provided. The substrate structure includes a semiconductor substrate, a first oxide-nitride-oxide (ONO) layer, and a second ONO layer. The semiconductor substrate has first and second surfaces opposite to each other. The first ONO layer includes a first oxide layer, a first nitride layer and a second oxide layer formed on the first surface in sequence. The second ONO layer includes a third oxide layer, a second nitride layer and a fourth oxide layer formed on the second surface in sequence. A nitride mask layer is formed on the first ONO layer. The fourth oxide layer is removed. The second nitride layer and the nitride mask layer are removed. The second oxide layer and the third oxide layer are removed. A fifth oxide layer is formed on the first nitride layer.

摘要翻译： 一种形成半导体结构的方法包括以下步骤。 提供了基板结构。 衬底结构包括半导体衬底，第一氧化物 - 氧化物 - 氧化物（ONO）层和第二ONO层。 半导体衬底具有彼此相对的第一和第二表面。 第一ONO层包括顺序地形成在第一表面上的第一氧化物层，第一氮化物层和第二氧化物层。 第二ONO层包括依次形成在第二表面上的第三氧化物层，第二氮化物层和第四氧化物层。 在第一ONO层上形成氮化物掩模层。 去除第四氧化物层。 去除第二氮化物层和氮化物掩模层。 去除第二氧化物层和第三氧化物层。 在第一氮化物层上形成第五氧化物层。