摘要:
A display device adopting a single liquid crystal display (LCD) panel, by which a decrement in luminance is reduced using only a single liquid crystal device, is provided. Accordingly, a degradation in color saturation due to an increase in luminance caused by the addition of an achromatic color is compensated for by a four-color conversion algorithm, even when an image is displayed using a single LCD panel or a ferroelectric liquid crystal (FLC) panel. Hence, the brightness of a screen increases compared to the prior art, and more distinct colors can be displayed.
摘要:
A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.
摘要:
Nonvolatile memory devices and related methods of manufacturing the same are provided. A nonvolatile memory device includes a tunneling layer on a substrate, a floating gate on the tunneling layer, an inter-gate dielectric layer structure on the floating gate, and a control gate on the inter-gate dielectric layer structure. The inter-gate dielectric layer structure includes a first silicon oxide layer, a high dielectric layer on the first silicon oxide layer, and a second silicon oxide layer on the high dielectric layer opposite to the first silicon oxide layer The high dielectric layer may include first and second high dielectric layers laminated on each other, and the first high dielectric layer may have a lower density of electron trap sites than the second high dielectric layer and may have a larger energy band gap or conduction band-offset than the second high dielectric layer.
摘要:
A caller identification system provides a caller identifier of an actual user rather than the conventional telephone number dependent on a caller terminal. Further, a caller base billing method and its system can bill an actual user by carrying out user authentication through a certification authority for a caller identifier that is independent of a caller terminal. The method includes the steps of receiving authentication information of the caller from a caller terminal; verifying the authentication information; and carrying out call setup if the authentication information and the certificate match, wherein the authentication information is generated by using a caller identifier and a private key that are applied by the caller, with no dependency on the caller terminal, and caller information corresponding to the caller identifier is transmitted to a callee terminal during call setup.
摘要:
Example embodiments provide a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may include a lower electrode including a first lower electrode and a second lower electrode, and the second lower electrode may be formed on at least a part of the first lower electrode using a material different from the first lower electrode. A dielectric film may be formed on at least a part of the second lower electrode and a first upper electrode may be formed on the dielectric film.
摘要:
Provided are flash memory devices. Embodiments of such devices may include a tunnel insulator formed on a substrate, a charge-storage layer formed on the tunnel insulator, a lower buffer layer formed on the charge-storage layer, a blocking layer formed on the lower buffer layer, and a first gate electrode formed on the blocking layer. Such devices may include second gate electrode formed on the first gate electrode, such that the lower buffer layer includes a silicon-free insulator, the blocking layer includes oxides or ternary lanthanum compounds, andthe oxides or ternary lanthanum compounds include lanthanide elements.
摘要:
Provided is an apparatus for developing and verifying a system-on-chip for an Internet phone. The object of the present invention is to provide the system-on-chip developing and verifying apparatus for the Internet phone, which can develop and verify the system-on-chip simultaneously by integrating an Advanced RISC Machine(ARM) core module, a field programmable gate array (FPGA), a peripheral interface and the system-on-chip. The apparatus includes an ARM core module performing a core processor function, a peripheral interface including a memory and many external input/output devices, a FPGA controlling the ARM core module and performing a control function for connecting the ARM core module and the peripheral interface, and a system-on-chip integrating the functions of the ARM core module and the FPGA.
摘要:
A system for measuring a communication quality and a method thereof are disclosed. The system includes: a first communication quality measuring unit for requesting a second communication quality measuring unit to transmit a test traffic, measuring a communication quality from the test traffic received from the second communication quality measuring unit as a response of the request, and controlling a generation frequency and an amount of test traffic for a next communication quality measuring stage by analyzing the measured communication quality; and the second communication quality measuring unit for generating a test traffic by controlling a generation frequency and an amount of the test traffic according to a request of the first communication quality measuring unit.