利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

152 条记录 (耗时 0.026 秒)

    Method for forming a low thermal budget spacer
    81.
    发明授权
    Method for forming a low thermal budget spacer 失效
    用于形成低热预算间隔物的方法

    公开(公告)号：US07049200B2

    公开(公告)日：2006-05-23

    申请号：US10854013

    申请日：2004-05-25

    申请人： Reza Arghavani ,  Ken MacWilliams ,  Hichem M'Saad

    发明人： Reza Arghavani ,  Ken MacWilliams ,  Hichem M'Saad

    IPC分类号： H01L21/336

    CPC分类号： H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

    摘要： A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3 and bis-(tertiarybutylamine)silane, and striking a second plasma to form a carbon-doped nitride layer on the oxide layer, where the second plasma may be generated from a nitride gas that includes NH3 and the bis-(tertiarybutylamine)silane. The first and second plasmas may be formed using plasma CVD and the bis-(tertiarybutylamine)silane flows uninterrupted between the striking of the first plasma and the striking of the second plasma.

    摘要翻译： 一种在金属氧化物半导体器件的栅电极上形成侧壁间隔物的方法，其包括冲击第一等离子体以在栅电极的一侧上形成氧化物层，其中第一等离子体由氧化物气体产生， 和三（叔丁基胺）硅烷，并且冲击第二等离子体以在氧化物层上形成碳掺杂的氮化物层，其中第二等离子体可以由氮化物气体产生， 3和双 - （叔丁胺）硅烷。 可以使用等离子体CVD形成第一和第二等离子体，并且双（叔丁胺）硅烷在第一等离子体的击打和第二等离子体的击打之间不间断地流动。

    Low dielectric constant porous films
    82.
    发明申请
    Low dielectric constant porous films 有权
    低介电常数多孔膜

    公开(公告)号：US20050215065A1

    公开(公告)日：2005-09-29

    申请号：US10808231

    申请日：2004-03-23

    申请人： Son Nguyen ,  Hichem M'Saad ,  Bok Kim

    发明人： Son Nguyen ,  Hichem M'Saad ,  Bok Kim

    IPC分类号： C23C16/30 ,  H01B3/46 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/768

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/31111 ,  H01L21/31695 ,  H01L21/7682

    摘要： A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO2) and boron oxide (B2O3). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film.

    摘要翻译： 公开了一种用于电子器件的多孔绝缘膜，其通过去除可溶性纳米相致密剂而形成。 通过化学气相沉积（CVD）或通过玻璃上的旋转（S.O.G.）制备其中分散有可溶性致孔剂的硅基电介质膜。 优选的致​​孔剂的实例包括化合物，例如氧化锗（GeO 2 N 2）和氧化硼（B 2 O 3 O 3）。 热水可用于湿法蚀刻膜的处理，从而除去致孔剂并提供多孔介电膜。 为了进一步降低膜的介电常数，硅基电介质膜可以是碳掺杂的氧化硅。 此外，可以通过电子束处理多孔电介质膜以增强膜的电气和机械性能。

    Method of depositing an amorphous carbon film for etch hardmask application
    84.
    发明申请
    Method of depositing an amorphous carbon film for etch hardmask application 有权
    沉积用于蚀刻硬掩模应用的无定形碳膜的方法

    公开(公告)号：US20050202683A1

    公开(公告)日：2005-09-15

    申请号：US10799146

    申请日：2004-03-12

    申请人： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

    发明人： Yuxiang Wang ,  Sudha Rathi ,  Michael Kwan ,  Hichem M'Saad

    IPC分类号： H01L21/469

    CPC分类号： G03F7/094 ,  G03F7/091 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/7684

    摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

    摘要翻译： 提供了沉积无定形碳材料的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底的表面上形成介电材料层，通过引入包含一种或多种烃化合物和氩气的处理气体在电介质材料层上沉积无定形碳层 并且通过从双频RF源施加电力来产生处理气体的等离子体，蚀刻无定形碳层以形成图案化的非晶碳层，并且在对应于图案化无定形碳的电介质材料层中蚀刻特征定义 层。 无定形碳层可用作蚀刻停止层，抗反射涂层或两者。

    Stress reduction of sioc low k films
    87.
    发明申请
    Stress reduction of sioc low k films 审中-公开
    sioc低k膜的应力减少

    公开(公告)号：US20050037153A1

    公开(公告)日：2005-02-17

    申请号：US10642081

    申请日：2003-08-14

    申请人： Francimar Schmitt ,  Hichem M'Saad

    发明人： Francimar Schmitt ,  Hichem M'Saad

    IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H05H1/24

    CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633

    摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including one or more cyclic organosiloxanes and one or more inert gases to a substrate in a chamber. In one aspect, the gas mixture further includes one or more oxidizing gases. The ratio of a total flow rate of the one or more cyclic organosiloxanes into the chamber to a total flow rate of the one or more inert gases into the chamber is from about 0.10 to about 0.20. Preferably, the low dielectric constant film has compressive stress.

    摘要翻译： 沉积低介电常数膜的方法包括向腔室中的基底提供包括一种或多种环状有机硅氧烷和一种或多种惰性气体的气体混合物。 一方面，气体混合物还包括一种或多种氧化性气体。 一个或多个环状有机硅氧烷进入室中的总流速与进入室中的一种或多种惰性气体的总流量的比例为约0.10至约0.20。 优选地，低介电常数膜具有压应力。

    Air gap integration scheme
    89.
    发明授权
    Air gap integration scheme 有权
    气隙整合方案

    公开(公告)号：US08389376B2

    公开(公告)日：2013-03-05

    申请号：US12714865

    申请日：2010-03-01

    申请人： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

    发明人： Alexandros T. Demos ,  Li-Qun Xia ,  Bok Hoen Kim ,  Derek R. Witty ,  Hichem M'Saad

    IPC分类号： H01L21/76

    CPC分类号： H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3146 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10S438/931

    摘要： Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure including depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.

    摘要翻译： 提供了用于形成包括气隙的结构的方法。 在一个实施方案中，提供了一种用于形成镶嵌结构的方法，包括通过包括使有机硅化合物和致孔剂提供前体反应的方法沉积多孔低介电常数层，沉积含致孔剂的材料，以及除去至少一部分 含致孔剂的材料，通过使造孔剂提供前体反应，在有机层中形成特征定义和多孔低介电常数层，在多孔低介电常数层上沉积有机层，用导电材料填充特征定义 在有机层上沉积掩模层和设置在特征定义中的导电材料，在掩模层中形成孔以暴露有机层，通过孔去除部分或全部有机层，并形成相邻的气隙 导电材料。