公开(公告)号：US07602590B2

公开(公告)日：2009-10-13

申请号：US11034113

申请日：2005-01-12

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01F41/303 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/10

摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： TMR读取头中的常规自由层已经被两个或更多个磁性层的复合物代替，其中一个是富铁的结果是具有比现有技术的器件更高的MR比的改进的器件，同时仍保持自由层 柔软度和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US20060126231A1

公开(公告)日：2006-06-15

申请号：US11010105

申请日：2004-12-10

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3903 ,  H01L43/10

摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

公开(公告)号：US20060092578A1

公开(公告)日：2006-05-04

申请号：US10977636

申请日：2004-10-29

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US07431961B2

公开(公告)日：2008-10-07

申请号：US11010105

申请日：2004-12-10

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

IPC分类号： B05D5/12

CPC分类号： G11B5/3903 ,  H01L43/10

摘要： In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

摘要翻译： 在本发明中，为了最小化电流分流效应，同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL 2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

公开(公告)号：US20080209714A1

公开(公告)日：2008-09-04

申请号：US12152058

申请日：2008-05-12

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

公开(公告)号：US07950136B2

公开(公告)日：2011-05-31

申请号：US12152058

申请日：2008-05-12

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/187 ,  C23F1/12

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A process to manufacturing a TMR read head with improved voltage breakdown is performed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来进行制造具有改善的电压击穿的TMR读取头的工艺。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US20100247966A1

公开(公告)日：2010-09-30

申请号：US12802081

申请日：2010-05-28

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3254 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1114

摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

摘要翻译： TMR读取头中的常规自由层已经被两个或更多个磁性层的复合物代替，其中一个是富铁的结果是具有比现有技术的器件更高的MR比的改进的器件，同时仍保持自由层 柔软度和可接受的磁致伸缩。 还描述了用于制造该装置的方法。

公开(公告)号：US07377025B2

公开(公告)日：2008-05-27

申请号：US10977636

申请日：2004-10-29

申请人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

发明人： Tong Zhao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC分类号： G11B5/193 ,  C23C14/48

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

摘要翻译： 通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。 在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。 这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

公开(公告)号：US20060152861A1

公开(公告)日：2006-07-13

申请号：US11034114

申请日：2005-01-12

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3254 ,  H01F10/3281 ,  H01F10/3295 ,  H01L43/08 ,  Y10T428/1114

摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

公开(公告)号：US20050252576A1

公开(公告)日：2005-11-17

申请号：US10846406

申请日：2004-05-14

申请人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

发明人： Yun-Fei Li ,  Hui-Chuan Wang ,  Tong Zhao ,  Chyu-Jiuh Torng

IPC分类号： H01F10/12 ,  H01F10/32 ,  H01F41/30

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/304 ,  Y10T29/49044

摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

摘要翻译： 在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。 通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。 为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。 结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。